Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Constance Schmidt"'
Publikováno v:
Nanomaterials, Vol 13, Iss 9, p 1455 (2023)
In this work, the deposition of β-Ga2O3 microstructures and thin films was performed with Ga(NO3)3 solutions by ultrasonic nebulization and spray coating as low-cost techniques. By changing the deposition parameters, the shape of β-Ga2O3 microstruc
Externí odkaz:
https://doaj.org/article/05f1103897204ffd8a66950652223a9e
Autor:
Yevhenii Havryliuk, Oleksandr Selyshchev, Mykhailo Valakh, Alexandra Raevskaya, Oleksandr Stroyuk, Constance Schmidt, Volodymyr Dzhagan, Dietrich R. T. Zahn
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 10, Iss 1, Pp 222-227 (2019)
The effect of flash-lamp annealing (FLA) on the re-crystallization of thin films made of colloidal Cu2ZnSnS4 nanocrystals (NCs) is investigated by Raman spectroscopy. Unlike similar previous studies of NCs synthesized at high temperatures in organic
Externí odkaz:
https://doaj.org/article/eb1f2f812ad040e5af8322145eaf5a5e
Autor:
Thomas Seyller, Fabian Göhler, Dietrich R. T. Zahn, Constance Schmidt, Marisa A. Choffel, David W. Johnson
Publikováno v:
The Journal of Physical Chemistry C. 125:9469-9478
Recently, it was shown that the metastable heterostructure (BiSe)0.97MoSe2, consisting of alternating bilayers of BiSe and MoSe2 trilayers, contained both the semiconducting 2H- and the metallic 1T...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::feab66bc9d21b48df7af2448762d096d
https://doi.org/10.1021/acs.jpcc.1c01731
https://doi.org/10.1021/acs.jpcc.1c01731
Publikováno v:
Nanotechnology. 33(4)
We demonstrate the conversion to quasi two-dimensional (2D)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::436d608563e3fd3ebcb9c8dd9262cac6
https://pubmed.ncbi.nlm.nih.gov/34644690
https://pubmed.ncbi.nlm.nih.gov/34644690
Synthesis and Properties of (BiSe)0.97MoSe2: A Heterostructure Containing Both 2H-MoSe2 and 1T-MoSe2
Autor:
Constance Schmidt, David C. Johnson, Shannon Sanaya Fender, Thomas Seyller, Erik C. Hadland, Fabian Göhler, Gavin Mitchson, Dietrich R. T. Zahn
Publikováno v:
Chemistry of Materials. 31:5824-5831
The metastable heterostructure, (BiSe)0.97MoSe2, containing alternating bilayers of BiSe and MoSe2 trilayers was synthesized using the modulated elemental reactant method to determine if charge transfer from BiSe to MoSe2 would stabilize the metallic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2031248a6dfab68e1481d51e26a9d6b1
https://doi.org/10.1021/acs.chemmater.9b01899
https://doi.org/10.1021/acs.chemmater.9b01899
Autor:
Dietrich R. T. Zahn, Oleksandr Stroyuk, Oleksandr Selyshchev, Mykhailo Ya. Valakh, Alexandra Raevskaya, Volodymyr Dzhagan, Constance Schmidt, Yevhenii Havryliuk
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 10, Iss 1, Pp 222-227 (2019)
Beilstein Journal of Nanotechnology
Beilstein Journal of Nanotechnology
The effect of flash-lamp annealing (FLA) on the re-crystallization of thin films made of colloidal Cu2ZnSnS4 nanocrystals (NCs) is investigated by Raman spectroscopy. Unlike similar previous studies of NCs synthesized at high temperatures in organic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::93763de9136290b8ca63143c2ee33f4c
https://doaj.org/article/eb1f2f812ad040e5af8322145eaf5a5e
https://doaj.org/article/eb1f2f812ad040e5af8322145eaf5a5e
Autor:
Constance Schmidt, Dietrich R. T. Zahn
Publikováno v:
Journal of Vacuum Science & Technology A. 40:043404
Here, the incorporation of impurities into doped thin β-Ga2O3 films was studied by Raman spectroscopy, and a simple spring model was employed to estimate the impurity concentration from the impurity-modified frequencies of first-order phonon modes.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57305c67c28c7cfc59581120e063bc11
https://doi.org/10.1116/6.0001822
https://doi.org/10.1116/6.0001822
Autor:
Dmytro Solonenko, Constance Schmidt, Dietrich R. T. Zahn, Chris Stoeckel, Karla Hiller, Chuanqi Lan
Publikováno v:
Journal of Materials Science. 56:16181-16182
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0ec567c9e0a3624c395d6e6a6119127
https://doi.org/10.1007/s10853-021-06301-6
https://doi.org/10.1007/s10853-021-06301-6
Publikováno v:
Nanotechnology. 33:045702
We demonstrate the conversion to quasi two-dimensional (2D) β-Ga2O3 by thermally oxidizing layered GaSe of different thicknesses (from bilayer to 100 nm). GaSe flakes were prepared by mechanical exfoliation onto Si with a 300 nm SiO2 layer, highly o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a70be1f2a4ef8b73713b785d79412ab2
https://doi.org/10.1088/1361-6528/ac2f5d
https://doi.org/10.1088/1361-6528/ac2f5d
Publikováno v:
physica status solidi (b). 257:1900400
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dcc705e67e1e2cd699bdf8d6a762c1a
https://doi.org/10.1002/pssb.201900400
https://doi.org/10.1002/pssb.201900400