Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Constance Rost"'
Autor:
Peter Stallinga, Clara Santato, Raffaella Capelli, Fabio Cicoira, Siegfried Karg, Maria Loi, Roberto Zamboni, Vellaisamy A. L. Roy, Constance Rost, Mauro Murgia, Michele Muccini
Publikováno v:
Synthetic Metals, 146(3), 329-334. Elsevier Science
Optoelectronic properties of light-emitting field-effect transistors (LETs) fabricated on bottom-contact transistor structures using a tetracene film as charge-transport and light-emitting material are investigated. Electroluminescence generation and
Publikováno v:
Journal of Applied Physics. 95:5782-5787
Ambipolar charge injection and transport are a prerequisite for a light-emitting organic fieldeffect transistor (OFET). Organic materials, however, typically show unipolar charge-carrier transport characteristics. Consequently, organic thin-film fiel
Autor:
Siegfried Karg, Heike Riel, W. Rieß, Constance Rost, Tilman A. Beierlein, David J. Gundlach, Beat Ruhstaller
Publikováno v:
Synthetic Metals. 138:213-221
Systematic studies are a prerequisite for a detailed understanding of the internal processes in organic semiconductors and devices, which is of great importance for optimizing organic light-emitting diode performance. Devices based on small molecules
Autor:
Constance Rost-Bietsch, Siegfried Karg, Michele Muccini, Maria Antonietta Loi, Mauro Murgia, Walter Riess
Publikováno v:
Advanced functional materials
16 (2006): 41–47. doi:10.1002/adfm.200500424
info:cnr-pdr/source/autori:M.A. Loi, C. Rost-Bietsch, M.Murgia, S.F.Karg, W. Riess, M. Muccini/titolo:tuning optoelectronic properties of ambipolar organic light-emitting transistors using bulk heterojunction approach/doi:10.1002%2Fadfm.200500424/rivista:Advanced functional materials (Print)/anno:2006/pagina_da:41/pagina_a:47/intervallo_pagine:41–47/volume:16
Advanced Functional Materials, 16(1), 41-47. WILEY-V C H VERLAG GMBH
16 (2006): 41–47. doi:10.1002/adfm.200500424
info:cnr-pdr/source/autori:M.A. Loi, C. Rost-Bietsch, M.Murgia, S.F.Karg, W. Riess, M. Muccini/titolo:tuning optoelectronic properties of ambipolar organic light-emitting transistors using bulk heterojunction approach/doi:10.1002%2Fadfm.200500424/rivista:Advanced functional materials (Print)/anno:2006/pagina_da:41/pagina_a:47/intervallo_pagine:41–47/volume:16
Advanced Functional Materials, 16(1), 41-47. WILEY-V C H VERLAG GMBH
Bulk-heterojunction engineering is demonstrated as an approach to producing ambipolar organic light-emitting field-effect transistors with tunable electrical and optoelectronic characteristics. The electron and hole mobilities, as well as the electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8058c658b6ae3c6a8f08c7e8ac9bd306
https://publications.cnr.it/doc/53442
https://publications.cnr.it/doc/53442
Autor:
Michele Muccini, Constance Rost-Bietsch, Siegfried Karg, Walter Riess, Maria Antonietta Loi, M. Murgia
Publikováno v:
Pacific Rim Conference on Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005, 1106-1108
STARTPAGE=1106;ENDPAGE=1108;TITLE=Pacific Rim Conference on Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005
STARTPAGE=1106;ENDPAGE=1108;TITLE=Pacific Rim Conference on Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005
A light-emitting OFET with pronounced ambipolar current characteristic has been prepared by co-evaporation of α-quinquethiophene (α-5T) as hole-transport material and ditridecyl-perylene-tetracarboxylic diimide (P13) as electron-transport material.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9fb69234464de3165e47ab3cf7797ec0
https://research.rug.nl/en/publications/13727883-497c-4ee2-93b0-17133b0de582
https://research.rug.nl/en/publications/13727883-497c-4ee2-93b0-17133b0de582
Autor:
Mauro Murgia, Maria Antonietta Loi, Walter Riess, Michele Muccini, Siegfried Karg, Constance Rost
Publikováno v:
Applied Physics Letters, 85(9), 1613-1615
Applied physics letters 85 (2004): 1613–1615. doi:10.1063/1.1785290
info:cnr-pdr/source/autori:Rost, C; Karg, S; Riess, W; Loi, MA; Murgia, M; Muccini, M/titolo:Ambipolar light-emitting organic field-effect transistor/doi:10.1063%2F1.1785290/rivista:Applied physics letters/anno:2004/pagina_da:1613/pagina_a:1615/intervallo_pagine:1613–1615/volume:85
Applied physics letters 85 (2004): 1613–1615. doi:10.1063/1.1785290
info:cnr-pdr/source/autori:Rost, C; Karg, S; Riess, W; Loi, MA; Murgia, M; Muccini, M/titolo:Ambipolar light-emitting organic field-effect transistor/doi:10.1063%2F1.1785290/rivista:Applied physics letters/anno:2004/pagina_da:1613/pagina_a:1615/intervallo_pagine:1613–1615/volume:85
We demonstrate a light-emitting organic field-effect transistor (OFET) with pronounced ambipolar current characteristics. The ambipolar transport layer is a coevaporated thin film of alpha-quinquethiophene (alpha-5T) as hole-transport material and N,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::13b8329a382b5db20ed272015b2fcb97
https://research.rug.nl/en/publications/f9f96bee-ef2a-4d85-8d10-0bc2e6c43826
https://research.rug.nl/en/publications/f9f96bee-ef2a-4d85-8d10-0bc2e6c43826
Autor:
G. Paasch, Susanne Scheinert, Th. Lindner, Walter Riess, Constance Rost-Bietsch, Siegfried Karg
Publikováno v:
Journal of Applied Physics. 98:084505
Two-dimensional simulations of ambipolar or double-injection field-effect transistors (FETs) based on organic materials as active layer are presented in this article. These organic FETs are of interest because of the direct recombination accompanied
Autor:
Constance Rost, Walter Riess, Heike Riel, Hajime Nakamura, Beat Ruhstaller, Tilman A. Beierlein, Siegfried Karg
Publikováno v:
SID Symposium Digest of Technical Papers. 34:752
A classical electromagnetic approach using the radiative dipole model is applied to study the cavity effects on outcoupling efficiency for archetype top-emitting organic light-emitting devices. Predicted optical performances will be compared with the
Autor:
Dave Gundlach, Robert J. Polastre, Santos F. Alvarado, Junichi Sekine, Takatoshi Tsujimura, Atsushi Tanaka, Sayuri Kohara, Shinya Ono, Heike Riel, Chen-Wei Huang, Ikeda Nami, Peter Mueller, Keizo Takeda, Hiroki Fujimoto, Chung Jun-Wen, Eri Fukumoto, Michael Mastro, Jim Sanford, Chun-Che Hsu, Motohiko Asano, Frank R. Libsch, Tilman A. Beierlein, Constance Rost, Richard I. Kaufman, Hao-Jung Huang, Keigo Kanoh, Yoshinao Kobayashi, Siegfried Karg, Mitsuo Morooka, Hong-Ru Guo, Ruey-Min Chen, Cheng-Chung Yang, Alan Lien, Walter Riess, Kohji Murayama, Koichi Miwa, Chia-Tin Chung
Publikováno v:
SID Symposium Digest of Technical Papers. 34:6
A 20-inch, largest OLED display in the world is demonstrated which is driven by “Super Amorphous Silicon” technology. It has been widely believed that the characteristics of amorphous silicon TFT is not sufficient to drive OLED display. This pape