Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Conor P. Puls"'
Autor:
Umut Arslan, Philip E. Heil, Smith Angeline K, Pedro A. Quintero, Ouellette Daniel G, Juan G. Alzate, Sell Bernhard, Smith Andrew, Fatih Hamzaoglu, M. Seth, Pellegren James, M. Mainuddin, Tahir Ghani, Y. J. Chen, P. Bai, Rownak Jahan, Tanmoy Pramanik, Tofizur Rahman, Liqiong Wei, Justin S. Brockman, Conor P. Puls, P. Hentges, M. Sekhar, Aaron J. Littlejohn, Kevin J. Fischer, Oleg Golonzka, Christopher J. Wiegand, Nilanjan Das
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
In this paper, we discuss array-level MTJ process, performance, and reliability requirements for STT-MRAM operation in an L4 Cache application. We demonstrate 2 MB arrays of scaled-size MTJ devices capable of meeting L4 Cache specifications across al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adee6532309b9d4a14a290211f8a3a0c
https://doi.org/10.1109/iedm19573.2019.8993474
https://doi.org/10.1109/iedm19573.2019.8993474
Autor:
Jim OrDonnell, Fatih Hamzaoglu, Tahir Ghani, Kevin J. Fischer, Justin S. Brockman, Oleg Golonzka, Christopher J. Wiegand, Liqiong Wei, Nilanjan Das, Umut Arslan, Pulkit Jain, Blake C. Lin, Juan G. Alzate, Tanaya Sahu, Pedro A. Quintero, Mesut Meterelliyoz, P. Hentges, M. Sekhar, Ajay Vangapaty, Conor P. Puls, Rawshan Jahan
Publikováno v:
ISSCC
STT-MRAM has been emerging as a very-promising high-density embedded non-volatile memory (eNVM) [1], [2]. Embedded Flash memory has been the leading eNVM technology, but STT-MRAM has been developed as a better solution for continuing scaling, speed a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f15f74d871c0ad943ef0fee492be78b5
https://doi.org/10.1109/isscc.2019.8662444
https://doi.org/10.1109/isscc.2019.8662444
Autor:
Mesut Meterelliyoz, Tahir Ghani, Kevin J. Fischer, O'brien Kevin P, Pellegren James, Dmitri E. Nikonov, J.O Donnell, Chris Connor, Nilanjan Das, P. Nguyen, Smith Andrew, Buford Benjamin, Pedro A. Quintero, P. Hentges, Justin S. Brockman, M. Seth, M. Mainuddin, Philip E. Heil, Smith Angeline K, Brian S. Doyle, Rownak Jahan, Z. Zhang, David L. Kencke, M. Bohr, Liqiong Wei, P. Bai, Tofizur Rahman, M. Lu, Blake C. Lin, M. Sekhar, Conor P. Puls, Kaan Oguz, Joodong Park, A. Selarka, A. Romang, Oleg Golonzka, Christopher J. Wiegand, Juan G. Alzate, Ouellette Daniel G, Umut Arslan, Fatih Hamzaoglu
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
This paper presents key features of MRAM-based non-volatile memory embedded into Intel 22FFL technology. 22FFL is a high performance, ultra low power FinFET technology for mobile and RF applications with extensive high voltage and analog support, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7ba36237ea81a7d30a38bf6d3d89035
https://doi.org/10.1109/iedm.2018.8614620
https://doi.org/10.1109/iedm.2018.8614620
Autor:
Patel Reken, P. Yashar, C. Pelto, I. Tsameret, C. Petersburg, J. Longun, I. Jin, D. Ingerly, L. Rockford, Hsiao-Kang Chang, Conor P. Puls, P. Plekhanov, Muhammet Uncuer, Kevin J. Fischer, H. Kilambi
Publikováno v:
2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).
We describe here performance enhancement to Intel's 14nm high-performance logic technology interconnects and back end stack and introduce the SOC technology family of interconnects. Enhancement includes improved RC performance and intrinsic capacitan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5573af9d583436fc7bb7f7253372b3d1
https://doi.org/10.1109/iitc-amc.2016.7507637
https://doi.org/10.1109/iitc-amc.2016.7507637
Autor:
Patel Reken, P. Plekhanov, S. Rajamani, P. Reese, Conor P. Puls, Muhammet Uncuer, Rahim Kasim, E. Hwang, M. Agostinelli, M. Bost, Swaminathan Sivakumar, S. Nigam, Sanjay Natarajan, P. Charvat, S. Kosaraju, M. Prince, D. Rao, B. Song, M. Yang, S. Williams, P. Yashar, K. S. Lee, Pulkit Jain, I. Jin, Q. Fu, H. Hiramatsu, Kevin J. Fischer, Max M. Heckscher, R. McFadden, V. Chikarmane, Haran Mohit K, A. Rosenbaum, Huichu Liu, D. Bahr, C. Ganpule, C. Pelto, C. Allen
Publikováno v:
2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM).
We describe here Intel's 14nm high-performance logic technology interconnects and back end stack featuring 13 metal layers and a tri-metal laminated metal-insulator-metal (MIM) capacitor. For the first time on a logic product in high volume, multiple
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5878d1ee61e8d33e2cf853ee2454b701
https://doi.org/10.1109/iitc-mam.2015.7325600
https://doi.org/10.1109/iitc-mam.2015.7325600
Publikováno v:
Applied Physics Letters. 104:253503
We report the fabrication and measurements of ionic liquid gated Hall bar devices prepared on thin Ca$_3$Ru$_2$O$_7$ flakes exfoliated from bulk single crystals that were grown by a floating zone method. Two types of devices with their electrical tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::793111a0c4a7a43f0e10ddb9234924c9
https://doi.org/10.1063/1.4884277
https://doi.org/10.1063/1.4884277
Autor:
Joshua A. Robinson, Conor P. Puls, Neal E. Staley, Joseph P. Stitt, Mark A. Fanton, Konstantin V. Emtsev, Thomas Seyller, Ying Liu
Publikováno v:
Nano Letters; Mar2009, Vol. 9 Issue 3, p964-968, 5p
Publikováno v:
MRS Online Proceedings Library; 2010, Vol. 1284 Issue 1, p51-58, 8p
Publikováno v:
Applied Physics Letters; 6/23/2014, Vol. 104 Issue 25, p1-4, 4p, 1 Diagram, 1 Chart, 3 Graphs
Autor:
Puls, Conor P., Liu, Ying
Publikováno v:
Journal of Applied Physics; Nov2012, Vol. 112 Issue 9, p094510-094510-8, 1p, 4 Color Photographs, 6 Graphs