Zobrazeno 1 - 10
of 47
pro vyhledávání: '"Connor J. McClellan"'
Autor:
Aditya Sood, Feng Xiong, Shunda Chen, Haotian Wang, Daniele Selli, Jinsong Zhang, Connor J. McClellan, Jie Sun, Davide Donadio, Yi Cui, Eric Pop, Kenneth E. Goodson
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-9 (2018)
Thermal transistors can enable game changing applications in energy harvesting and heat routing. Here, the authors demonstrate reversible thermal modulation of nearly 10 times by ion intercalation in MoS2 nanofilms. A new thermal microscopy technique
Externí odkaz:
https://doaj.org/article/c1c38f3ac36e4c5286f83b05298c4db8
Autor:
Aditya Sood, Feng Xiong, Shunda Chen, Haotian Wang, Daniele Selli, Jinsong Zhang, Connor J. McClellan, Jie Sun, Davide Donadio, Yi Cui, Eric Pop, Kenneth E. Goodson
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-1 (2019)
An amendment to this paper has been published and can be accessed via a link at the top of the paper.
Externí odkaz:
https://doaj.org/article/0ddf0e41c38241be9b91c2d36a613c33
Publikováno v:
Nano Letters. 23:4095-4100
Publikováno v:
ACS Applied Materials & Interfaces. 14:22372-22380
Autor:
Saptarshi Das, Thomas D. Anthopoulos, Tibor Grasser, Connor J. McClellan, Uygar E. Avci, Penumatcha Ashish Verma, Lain-Jong Li, Aaron D. Franklin, Wenjuan Zhu, Theresia Knobloch, Rajendra Singh, Joerg Appenzeller, Amritanand Sebastian, Navakanta Bhat, Eric Pop, Inge Asselberghs, Zhihong Chen, Yury Yu. Illarionov
Publikováno v:
Nature Electronics. 4:786-799
Field-effect transistors based on two-dimensional (2D) materials have the potential to be used in very large-scale integration (VLSI) technology, but whether they can be used at the front end of line or at the back end of line through monolithic or h
Autor:
Raisul Islam, Tony F. Heinz, Nayeun Lee, Eric Pop, Koosha Nassiri Nazif, Jorik van de Groep, Ouri Karni, Krishna C. Saraswat, Aravindh Kumar, Connor J. McClellan, Mark L. Brongersma, Jiho Hong
Publikováno v:
Nano Letters, 21(8), 3443-3450. American Chemical Society
Layered semiconducting transition metal dichalcogenides (TMDs) are promising materials for high-specific-power photovoltaics due to their excellent optoelectronic properties. However, in practice, contacts to TMDs have poor charge carrier selectivity
Publikováno v:
ACS Nano. 15:1587-1596
Semiconductors require stable doping for applications in transistors, optoelectronics, and thermoelectrics. However, this has been challenging for two-dimensional (2D) materials, where existing approaches are either incompatible with conventional sem
Autor:
Stephanie M. Bohaichuk, Gregory Pitner, Jason Li, Miguel Muñoz Rojo, Jaewoo Jeong, Feifei Lian, Mahesh G. Samant, Stuart S. P. Parkin, Connor J. McClellan, H.-S. Philip Wong, Eric Pop
Publikováno v:
ACS nano, 13(10), 11070-11077. American Chemical Society
Vanadium dioxide (VO2) has been widely studied for its rich physics and potential applications, undergoing a prominent insulator-metal transition (IMT) near room temperature. The transition mechanism remains highly debated, and little is known about
Autor:
Michelle Chen, Ching-Hua Wang, Alvin Tang, Eric Pop, Linsen Li, Sam Vaziri, Victoria Chen, H-S Philip Wong, Connor J. McClellan
Publikováno v:
ACS nano. 15(5)
High-density memory arrays require selector devices, which enable selection of a specific memory cell within a memory array by suppressing leakage current through unselected cells. Such selector devices must have highly nonlinear current-voltage char
Autor:
Koosha, Nassiri Nazif, Aravindh, Kumar, Jiho, Hong, Nayeun, Lee, Raisul, Islam, Connor J, McClellan, Ouri, Karni, Jorik, van de Groep, Tony F, Heinz, Eric, Pop, Mark L, Brongersma, Krishna C, Saraswat
Publikováno v:
Nano letters. 21(8)
Layered semiconducting transition metal dichalcogenides (TMDs) are promising materials for high-specific-power photovoltaics due to their excellent optoelectronic properties. However, in practice, contacts to TMDs have poor charge carrier selectivity