Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Conghai Xu"'
Publikováno v:
Chinese Journal of Electronics. 26:218-222
Wideband traveling wave PIN Diode switches and attenuators are proposed. The switches and attenuators consist of three shunt PIN diodes, six radial stubs, bias circuit and DC return circuit. Wide bandwidth is achieved with six different radial stubs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ac55ff10aaf037d00d616eaad0e917a
https://doi.org/10.1049/cje.2016.08.033
https://doi.org/10.1049/cje.2016.08.033
Publikováno v:
2010 International Conference on Microwave and Millimeter Wave Technology.
This paper proposes a W-band detector with high tangential signal sensitivity (TSS) and voltage sensitivity, which is intended to apply for 3 mm wave radiometer. The commercially available GaAs detector diode Agilent® HSCH-9161 is adopted to build a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de2df790dded90686a900a90afb8a86b
https://doi.org/10.1109/icmmt.2010.5525220
https://doi.org/10.1109/icmmt.2010.5525220
Publikováno v:
Journal of Semiconductors. 36:065002
Two broadband detectors at W-band and D-band are analyzed and designed with low barrier Schottky diodes. The input circuit of the detectors is realized by low and high impedance microstrip lines, and their output circuit is composed of a radio freque
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8abc82d2da36a25392cbcf4bc7aef2d6
https://doi.org/10.1088/1674-4926/36/6/065002
https://doi.org/10.1088/1674-4926/36/6/065002
Publikováno v:
Journal of Semiconductors. 34:125004
W-band quartz based high output power fix-tuned doublers are analyzed and designed with planar Schottky diodes. Full-wave analysis is carried out to find diode embedding impedances with a lumped port to model the nonlinear junction. Passive networks
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98d3d42f81725bc0a2a83cdccfe8445f
https://doi.org/10.1088/1674-4926/34/12/125004
https://doi.org/10.1088/1674-4926/34/12/125004
Publikováno v:
Journal of Semiconductors; Dec2013, Vol. 34 Issue 12, p125004-125008, 5p
Publikováno v:
2010 International Conference on Microwave & Millimeter Wave Technology (ICMMT); 2010, p582-531, 1p