Acupuncture for the treatment of severe acute pain in Herpes Zoster: results of a nested, open-label, randomized trial in the VZV Pain Study

Autor: Placido Giuseppina, Consorte Augusta, Toro Patrizia, Di Profio Sonia, Congedo Gabriele, Rebuzzi Cristina, Polilli Ennio, Manzoli Lamberto, Tontodonati Monica, Ursini Tamara, Laganà Stefano, D'Amario Claudio, Granchelli Carla, Parruti Giustino, Pippa Lucio

Publikováno v: BMC Complementary and Alternative Medicine, Vol 11, Iss 1, p 46 (2011)

Abstract Background Data on the potential efficacy of acupuncture (AC) in controlling intense or very intense pain in patients with Herpes Zoster (HZ) has not been so far adequately assessed in comparison with standard pharmacological treatment (ST)

Externí odkaz: https://doaj.org/article/8302659dcdac46ab9b2ab2f8f55b7406

Atomic layer-deposited Al–HfO2/SiO2 bi-layers towards 3D charge trapping non-volatile memory

Autor: Congedo, Gabriele, Wiemer, Claudia, Lamperti, Alessio, Cianci, Elena, Molle, Alessandro, Volpe, Flavio G., Spiga, Sabina

Publikováno v: In Thin Solid Films 30 April 2013 533:9-14

Simulation Study of the Trapping Properties of HfO2-Based Charge-Trap Memory Cells

Autor: Driussi, Francesco, Spiga, Sabina, Lamperti, Alessio, Congedo, Gabriele, Gambi, Alberto

Publikováno v: I.E.E.E. transactions on electron devices 61 (2014): 2056–2063. doi:10.1109/TED.2014.2316374
info:cnr-pdr/source/autori:Driussi, Francesco; Spiga, Sabina; Lamperti, Alessio; Congedo, Gabriele; Gambi, Alberto/titolo:Simulation Study of the Trapping Properties of HfO2-Based Charge-Trap Memory Cells/doi:10.1109%2FTED.2014.2316374/rivista:I.E.E.E. transactions on electron devices/anno:2014/pagina_da:2056/pagina_a:2063/intervallo_pagine:2056–2063/volume:61

In this paper, the trapping properties of HfO2-based charge-trap cells have been extensively studied by means of a synergic use of material analysis, electrical characterization, and electrical and atomistic modeling. We assessed the impact of proces

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::ec24a079f46748e279d2aab1002610e3
http://www.cnr.it/prodotto/i/304594

Experimental and simulation study of the program efficiency of HfO 2 based charge trapping memories

Autor: Spiga, Sabina, Congedo, Gabriele, Russo, Ugo, Lamperti, Alessio, Salicio, Olivier, Driussi, Francesco, Vianello, Elisa

Publikováno v: European Solid State Device Research Conference, ESSDERC 2010, pp. 408–411, Siviglia, 2010
info:cnr-pdr/source/autori:Spiga, Sabina; Congedo, Gabriele; Russo, Ugo; Lamperti, Alessio; Salicio, Olivier; Driussi, Francesco; Vianello, Elisa/congresso_nome:European Solid State Device Research Conference, ESSDERC 2010/congresso_luogo:Siviglia/congresso_data:2010/anno:2010/pagina_da:408/pagina_a:411/intervallo_pagine:408–411

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Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::1b9173d60da0456ee063242d01a8f0bf

Vertical polysilicon Pinch-Off FET for 3D memory technology: Feasibility and electrical performance.

Autor: Congedo, Gabriele, Toledano-Luque, Maria, Arreghini, Antonio, Kar, Gouri Sankar, Tang, Baojun, Degraeve, Robin, Van Aerde, Steven, Kim, Woosik, Van den bosch, Geert, Van Houdt, Jan

Publikováno v: 2013 5th IEEE International Memory Workshop; 2013, p159-162, 4p