Zobrazeno 1 - 10
of 211
pro vyhledávání: '"Conduction type"'
Publikováno v:
Iranian Journal of Materials Science and Engineering, Vol 16, Iss 4, Pp 20-26 (2019)
Metal sulfides containing non-toxic and earth abundant elements have emerged as new environmentally friendly thermoelectric materials. In the present work, a new, fast and large scale route to synthesise bulk nanostructured Co1-xCuxSbS paracostibite
Externí odkaz:
https://doaj.org/article/c03ad02e4e5f4137896147e8cd68fe45
Akademický článek
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Autor:
Li-Dong Zhao, Jing Zhao, Shangqing Qu, Jikun Chen, Yu Xiao, Zhiguo Xia, Yonggang Wang, Shengyi Li, Yujie Yuan
Publikováno v:
Chemical Communications. 56:4882-4885
We report for the first time the discovery of reversible n–p conduction type switching in a chalcogenide, NaCu5S3, without structural transition. AC impedance and first-principles simulations of the ionic migration confirmed the local melting trend
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee5666e1e59fbd9f0650b62983c92a71
https://doi.org/10.1039/d0cc01429j
https://doi.org/10.1039/d0cc01429j
Autor:
Md. Mahfuz Alam, Dong Wang, M. Zhang, Kohei Nakae, Kentarou Sawano, Z. Di, Hiroshi Nakashima, K. Yamamoto, Hiroshi Akamine, Z. Xue
Publikováno v:
ECS Transactions. 93:73-77
We electrically characterized Ge-on-Insulator (GOI) fabricated by Smart-Cut™ method. Annealing improved electrical characteristics of the p-GOI. On the other hand, conduction type of the n-GOI changed to p-type after annealing. Structural analysis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79a8cb70a3a8ba5d04912037fe8d7a5f
https://doi.org/10.1149/09301.0073ecst
https://doi.org/10.1149/09301.0073ecst
Autor:
Chao Xu, Linjun Wang, Ming Li, Sun Shiwen, Jiahua Min, Jijun Zhang, Delong Zhang, Jiaxuan Zhang, Xiaoyan Liang
Publikováno v:
Journal of Electronic Materials. 48:2463-2468
According to the infrared attenuation spectrum, we can know the conduction type and major point defect of CdZnTe crystals. Based on point defect modelling, an appropriate modus of atmosphere annealing was described in this paper. In this paper, annea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d411d6be2a5812a8312212d5b8984288
https://doi.org/10.1007/s11664-018-06915-8
https://doi.org/10.1007/s11664-018-06915-8
Autor:
M. R. Metskhvarishvili, Marine Matcharashvili, Teimuraz A. Pagava, Darejan Khocholava, Manana Beridze, Iamze Kalandadze, Levan Chkhartishvili, Maia Kevkhishvili, Nona Esiava
The aim of research is studying the mechanism of n–p inversion of the conduction type of deformed silicon crystals in the course of their thermal treatment. Initially, almost non-dislocation zone-melted phosphorus-doped n-Si single crystals with el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::403163086044281bccc938ab5af075fc
https://zenodo.org/record/3381263
https://zenodo.org/record/3381263
Autor:
Tomohiro Kitazawa, Naotaka Uchitomi, Yuto Minamizawa, Hideyuki Toyota, Shiro Hidaka, Shin-ichi Nakamura
Publikováno v:
Journal of Crystal Growth. 487:34-39
The conduction type in (Zn,Sn,Mn)As2 thin films grown by molecular beam epitaxy (MBE) on InP substrates was found to be controllable from p-type to n-type as a function of Mn content. n-type (Zn,Sn,Mn)As2 thin films were obtained by Mn doping of more
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91b29c00911882dfcd34a7ab60128f08
https://doi.org/10.1016/j.jcrysgro.2018.02.018
https://doi.org/10.1016/j.jcrysgro.2018.02.018
Autor:
H. Frank
Publikováno v:
Acta Polytechnica, Vol 48, Iss 6 (2008)
Specimens of Zr1Nb and Zry-4W were pre-oxidized first for 360 days in steam at 425 °C and were then exposed for 3 min to 1200 °C in steam, simulating loss of coolant conditions. In this way, the oxide thickness was more than doubled. The I-V charac
Externí odkaz:
https://doaj.org/article/b6cb17b80eec48028eb616ed9ec360c1
Autor:
Masaaki Matsushima, Mao Kurokawa, Takao Shimizu, Atsuo Katagiri, Kensuke Akiyama, Hiroshi Funakubo, P. S. Sankara Rama Krishnan, Shota Ogawa, Mutsuo Uehara
Publikováno v:
Journal of Materials Science. 53:5151-5158
Epitaxial Mg2Si films with (111) orientation were successfully grown at 300 °C on (001) Al2O3 insulating substrates by RF magnetron sputtering method. The optimal conditions for the epitaxial growth were identified as a low deposition rate and high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e5acab5e7143fc28ae3fef7f5dca254
https://doi.org/10.1007/s10853-017-1902-z
https://doi.org/10.1007/s10853-017-1902-z
Autor:
Yan Tian, Luxi Peng, Haibo Gan, Shi-dong Liang, Huanjun Chen, Shaozhi Deng, Jun Chen, Fei Liu, Ningsheng Xu, Xun Yang
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-10 (2017)
Scientific Reports
Scientific Reports
There are more or less dopants or defects existing in nanomaterials, so they usually have different conduct-types even for the same substrate. Therefore, fast identification of the conduction-type of nanomaterials is very essential for their practica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f664484379a2288504fb6d0054a7aab8
http://link.springer.com/article/10.1038/s41598-017-12741-5
http://link.springer.com/article/10.1038/s41598-017-12741-5