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Publikováno v:
Journal of Applied Physics; 10/1/1991, Vol. 70 Issue 7, p3655, 6p
Development of a plasma source ion implantation facility for the modification of materials' surfaces
Autor:
Meyer, Kevin Alan
Bibliography: p. 197-203.
In Plasma Source Ion Implantation high energy [10-50 keV] plasma ions are implanted into materials to modify surface properties, achieving surface hardening, increased wear and corrosion resistance. Plasma Source Ion Im
In Plasma Source Ion Implantation high energy [10-50 keV] plasma ions are implanted into materials to modify surface properties, achieving surface hardening, increased wear and corrosion resistance. Plasma Source Ion Im
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3158::e90c41ca2293d4e825f3dc242fdbbc58
http://hdl.handle.net/11427/6538
http://hdl.handle.net/11427/6538
Autor:
Geduld, Dieter Rudi
It is now generally recognized that unless an alternative for aluminium is found the resistivity of the metal interconnects will soon limit device performance. Copper, with its low resistivity and greater resistance to electromigration is one of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3158::7ee452e9b9d825e4ef789a86a1fd7dde
http://hdl.handle.net/11427/18431
http://hdl.handle.net/11427/18431
Autor:
Schroeder, Brett Robert
Includes bibliographical references.
Laser annealing of metal layers on silicon substrates failed to produce uniform silicide layers. This can be attributed to constitutional supercooling effects. Laser annealing of thermally grown monosilicides
Laser annealing of metal layers on silicon substrates failed to produce uniform silicide layers. This can be attributed to constitutional supercooling effects. Laser annealing of thermally grown monosilicides
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3158::36a516d90ea3d48a7bb9a7f78965032e
http://hdl.handle.net/11427/16013
http://hdl.handle.net/11427/16013
Autor:
Naidoo, R Y
Includes bibliographical references.
High Tc thin film superconductors are of great interest because of their potential applications, particularly in the microelectronics field. A successful superconductor microelectronic technology depends both
High Tc thin film superconductors are of great interest because of their potential applications, particularly in the microelectronics field. A successful superconductor microelectronic technology depends both
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3158::797141b12b677b7c211590d5c0bcc170
http://hdl.handle.net/11427/17519
http://hdl.handle.net/11427/17519
Autor:
Zingu, Edmund Charles
Bibliography: pages 210-215.
A theory for the growth kinetics of planar silicide formation in single- and bi-layer metal silicon systems has been developed on the basis that the chemical potential gradient in the growing layer is the driving for
A theory for the growth kinetics of planar silicide formation in single- and bi-layer metal silicon systems has been developed on the basis that the chemical potential gradient in the growing layer is the driving for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3158::9db38c006a0e7c7d609a35a154a3ff3c
http://hdl.handle.net/11427/17052
http://hdl.handle.net/11427/17052
Autor:
McLeod, John Edward
Includes bibliographical references.
Atomic diffusion during the solid state formation of thin films of nickel silicides (Ni2Si and NiSi) from nickel and amorphous silicon has been investigated using 31Si radioactive tracer and inert marker tech
Atomic diffusion during the solid state formation of thin films of nickel silicides (Ni2Si and NiSi) from nickel and amorphous silicon has been investigated using 31Si radioactive tracer and inert marker tech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3158::8eb2e948ab140f50a8b4195a54cfec57
http://hdl.handle.net/11427/15903
http://hdl.handle.net/11427/15903