Zobrazeno 1 - 10
of 712
pro vyhledávání: '"Colour centres in diamond"'
Autor:
Cheng, Xingrui, Thurn, Andreas, Chen, Guangzhao, Jones, Gareth S., Coke, Maddison, Adshead, Mason, Michaels, Cathryn P., Balci, Osman, Ferrari, Andrea C., Atatüre, Mete, Curry, Richard, Smith, Jason M., Salter, Patrick S., Gangloff, Dorian A.
Spin-photon interfaces based on group-IV colour centres in diamond offer a promising platform for quantum networks. A key challenge in the field is realizing precise single-defect positioning and activation, which is crucial for scalable device fabri
Externí odkaz:
http://arxiv.org/abs/2409.07421
Autor:
Monticone, D. Gatto, Forneris, J., Levi, M., Battiato, A., Picollo, F., Olivero, P., Traina, P., Moreva, E., Enrico, E., Brida, G., Degiovanni, I. P., Genovese, M., Amato, G., Boarino, L.
Publikováno v:
International Journal of Quantum Information 12 (7-8), 1560011 (2014)
Single-photon sources represent a key enabling technology in quantum optics, and single colour centres in diamond are a promising platform to serve this purpose, due to their high quantum efficiency and photostability at room temperature. The widely
Externí odkaz:
http://arxiv.org/abs/1608.07132
Autor:
Chen, Yu-Chen, Salter, Patrick S., Knauer, Sebastian, Weng, Laiyi, Frangeskou, Angelo C., Stephen, Colin J., Dolan, Philip R., Johnson, Sam, Green, Ben L., Morley, Gavin W., Newton, Mark E., Rarity, John G., Booth, Martin J., Smith, Jason M.
Publikováno v:
Nature Photonics 11, 77 (2017)
Optically active point defects in crystals have gained widespread attention as photonic systems that can find use in quantum information technologies. However challenges remain in the placing of individual defects at desired locations, an essential e
Externí odkaz:
http://arxiv.org/abs/1606.05109
Publikováno v:
Nature Communications 7, 13512 (2016)
Recently, the negatively charged silicon vacancy centre (SiV) in diamond has emerged as a novel promising system for quantum information processing (QIP) due to its superior spectral properties and advantageous electronic structure: The SiV offers an
Externí odkaz:
http://arxiv.org/abs/1603.00789
Publikováno v:
Nature Communications 5, 4065 (2014)
The ability to measure weak signals such as pressure, force, electric field, and temperature with nanoscale devices and high spatial resolution offers a wide range of applications in fundamental and applied sciences. Here we present a proposal for a
Externí odkaz:
http://arxiv.org/abs/1404.6393
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Muller, Tina, Aharonovich, Igor, Wang, Zhe, Yuan, Xin, Castelletto, Stefania, Prawer, Steven, Atature, Mete
We report on the coherence properties of single photons from chromium-based colour centres in diamond. We use field-correlation and spectral lineshape measurements to reveal the interplay between slow spectral wandering and fast dephasing mechanisms
Externí odkaz:
http://arxiv.org/abs/1208.5628
Autor:
Lesik, Margarita, Spinicelli, Piernicola, Pezzagna, Sébastien, Happel, Patrick, Jacques, Vincent, Salord, Olivier, Rasser, Bernard, Delobbe, Anne, Sudraud, Pierre, Tallaire, Alexandre, Meijer, Jan, Roch, Jean-François
The creation of nitrogen-vacancy centres in diamond is nowadays well controlled using nitrogen implantation and annealing. Although the high-resolution placement of NV centres has been demonstrated using either collimation through pierced AFM tips or
Externí odkaz:
http://arxiv.org/abs/1304.6619
Autor:
Neu, Elke, Hepp, Christian, Hauschild, Michael, Gsell, Stefan, Fischer, Martin, Sternschulte, Hadwig, Steinmueller-Nethl, Doris, Schreck, Matthias, Becher, Christoph
Publikováno v:
New J. Phys. 15 (2013) 043005
We study single silicon vacancy (SiV) centres in chemical vapour deposition (CVD) nanodiamonds on iridium as well as an ensemble of SiV centres in a high quality, low stress CVD diamond film by using temperature dependent luminescence spectroscopy in
Externí odkaz:
http://arxiv.org/abs/1210.3201
Autor:
Grazioso, Fabio, Patton, Brian R., Delaney, Paul, Markham, Matthew L., Twitchen, Daniel J., Smith, Jason M.
Publikováno v:
Appl. Phys. Lett. 103, 101905 (2013)
Stress and strain are important factors in determining the mechanical, electronic, and optical properties of materials, relating to each other by the material's elasticity or stiffness. Both are represented by second rank field tensors with, in gener
Externí odkaz:
http://arxiv.org/abs/1110.3658