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A Multiscale TCAD Approach for the Simulation of InP DHBTs and the Extraction of Their Transit Times
Autor:
Sebastien Fregonese, Bertrand Ardouin, Christian Raya, Marina Deng, Colombos Bolognesi, Chhandak Mukherjee, Wei Quan, Akshay M. Arabhavi, Mathieu Luisier, Xin Wen, Cristell Maneux, Thomas Zimmer, Olivier Ostinelli, Virginie Nodjiadjim, Muriel Riet
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, In press, ⟨10.1109/TED.2019.2946514⟩
IEEE Transactions on Electron Devices, 66 (12)
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2019, 66 (12), pp.5084-5090. ⟨10.1109/TED.2019.2946514⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, In press, ⟨10.1109/TED.2019.2946514⟩
IEEE Transactions on Electron Devices, 66 (12)
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2019, 66 (12), pp.5084-5090. ⟨10.1109/TED.2019.2946514⟩
International audience; A multiscale technology computer-aided design (TCAD) simulation methodology is presented to calculate the intrinsic transit time of InP double heterojunction bipolar transistors (DHBTs). A 2-D hyd-rodynamic (HD) simulator is e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4663851154096ab324808f478b5ade34
https://hal.archives-ouvertes.fr/hal-02379133
https://hal.archives-ouvertes.fr/hal-02379133