Zobrazeno 1 - 10
of 177
pro vyhledávání: '"Colombo R. Bolognesi"'
Autor:
Sara Hamzeloui, Akshay M. Arabhavi, Filippo Ciabattini, Ralf Fluckiger, Diego Marti, Mojtaba Ebrahimi, Olivier Ostinelli, Colombo R. Bolognesi
Publikováno v:
IEEE Journal of Microwaves, Vol 2, Iss 4, Pp 660-668 (2022)
We report the 94 GHz large-signal load-pull performance of (0.3 × 9) μm2 InP/Ga(In)AsSb double heterojunction bipolar transistors (DHBTs) in the common-emitter (CE) and common-base (CB) configurations. Both configurations were implemented side-by-s
Externí odkaz:
https://doaj.org/article/f1626b93ca134ca0a09ef2f662522705
Autor:
Daxin Han, Giorgio Bonomo, Diego Calvo Ruiz, Akshay Mahadev Arabhavi, Olivier J. S. Ostinelli, Colombo R. Bolognesi
Publikováno v:
IEEE Transactions on Electron Devices, 69 (7)
Digital electronics power consumption evolved into a major concern: at the current pace, general-purpose computing energy consumption will exceed global energy production before 2045. The principal approach to curbing energy consumption in digital ap
Autor:
Akshay M. Arabhavi, Filippo Ciabattini, Sara Hamzeloui, Ralf Fluckiger, Tamara Saranovac, Daxin Han, Diego Marti, Giorgio Bonomo, Rimjhim Chaudhary, Olivier Ostinelli, Colombo R. Bolognesi
Publikováno v:
IEEE Transactions on Electron Devices, 69 (4)
We report a new InP/GaAsSb double heterojunction bipolar transistor (DHBT) emitter fin architecture with a record fMAX =1.2 THz, a simultaneous fT =475 GHz, and BVCEO} =5.4 V. The resulting BVCEO × fMAX =6.48 THz-V is unparalleled in semiconductor t
Autor:
Rimjhim Chaudhary, Akshay M. Arabhavi, Laurenz Kulmer, Sara Hamzeloui, Marco Eppenberger, Martin Leich, Olivier Ostinelli, Juerg Leuthold, Colombo R. Bolognesi
Publikováno v:
Optical Fiber Communication Conference (OFC) 2023.
We report the first power performance of Type-II GaInAsSb/InP UTC-PDs. The UTC-PDs attain a zero-bias output power of -14 dBm at 100 GHz, one of the highest reported for any zero-bias photodiodes.
Autor:
Sara Hamzeloui, Akshay M. Arabhavi, Filippo Ciabattini, Diego Marti, Ralf Fluckiger, Mojtaba Ebrahimi, Olivier Ostinelli, Colombo R. Bolognesi
Publikováno v:
2022 17th European Microwave Integrated Circuits Conference (EuMIC).
Autor:
Rimjhim Chaudhary, Olivier Ostinelli, Diego Marti, Filippo Ciabattini, Sara Hamzeloui, Ralf Fluckiger, Colombo R. Bolognesi, Akshay M. Arabhavi, Wei Quan, Martin Leich
Publikováno v:
Journal of Lightwave Technology, 39 (7)
We report uniform Type-II GaInAsSb/InP UTC-PDs, and compare their performance to devices fabricated with GaAsSb uniform and graded (composition and doping) absorbers of the same thickness. The quaternary UTC-PDs show a transit limited bandwidth of 27
Autor:
Bertrand Ardouin, Christian Raya, Chandan Yadav, Marina Deng, Thomas Zimmer, Xin Wen, Chhandak Mukherjee, Mathieu Luisier, Wei Quan, Akshay M. Arabhavi, Sebastien Fregonese, Colombo R. Bolognesi, Cristell Maneux, Magali De Matos
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2020, 67 (12), pp.5441-5447. ⟨10.1109/TED.2020.3033834⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2020, 67 (12), pp.5441-5447. ⟨10.1109/TED.2020.3033834⟩
This article reports a detailed approach toward optimization of on-wafer thru-reflect-line (TRL) calibration structures for submillimeter-wave characterization of a state-of-the-art indium-phosphide (InP) technology, validated by thorough experimenta
Autor:
Giorgio Bonomo, Daxin Han, Olivier Ostinelli, Diego Calvo Ruiz, Tamara Saranovac, Colombo R. Bolognesi
Publikováno v:
IEEE Electron Device Letters. 41:1320-1323
GaInAs-based Metal Oxide Semiconductor High Electron Mobility Transistors (MOS-HEMTs) can in principle combine the wide bandwidth of HEMTs to the low gate leakage current of MOSFETs in a single deeply-scaled ultrahigh speed low-noise technology. Desp
Autor:
Daxin Han, Giorgio Bonomo, Diego Calvo Ruiz, Akshay Mahadev Arabhavi, Olivier J. S. Ostinelli, Colombo R. Bolognesi
Publikováno v:
IEEE Transactions on Electron Devices, 69 (7)
Part I of this work described narrow bandgap GaInAs-based I-MOS devices with a minimum steep slope SSmin = 1.25 mV/dec maintained over 4 orders of magnitude in drain current, ION/IOFF ratios >106 at 300 K (>109 at 15 K), and low operating voltages fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d9aee6e7023f575a4fa1b9dca1d00694
Autor:
Olivier Ostinelli, Daxin Han, Akshay M. Arabhavi, Colombo R. Bolognesi, Anna Hambitzer, Tamara Saranovac, Diego Calvo Ruiz
Publikováno v:
IEEE Transactions on Electron Devices, 66 (11)
GaInAs/InAs composite channels in InP-based pHEMTs enable wideband and/or low-noise performances because of their superior carrier transport properties. To date, the influence of the InAs inset design details on transistor performance has not been pa