Zobrazeno 1 - 10
of 431
pro vyhledávání: '"Colinge, J. P."'
Autor:
Khan, Biswajit, Mukherjee, Abir, Georgiev, Yordan M., Colinge, J. P., Ghosh, Suprovat, Das, Samaresh
In the pursuit of room temperature quantum hardware, our study introduces a gate voltage tunable quantum wire within a tri-gated n-type junctionless MOSFET. The application of gate voltage alters the parabolic potential well of the tri-gated junction
Externí odkaz:
http://arxiv.org/abs/2403.07324
Autor:
Bosch, D., Alba, P. Acosta, Kerdiles, S., Benevent, V., Perrot, C., Lassarre, J., Richy, J., Lacord, J., Sklenard, B., Brunet, L., Batude, P., Fenouillet-Beranger, C., Lattard, D., Colinge, J. P., Balestra, F., Andrieu, F.
To take fully advantage of Junctionless transistor (JLT) low-cost and low-temperature features we investigate a 475 degC process to create onto a wafer a thin poly-Si layer on insulator. We fabricated a 13nm doped (Phosphorous, 1E19 at/cm3) poly-sili
Externí odkaz:
http://arxiv.org/abs/2011.15061
Autor:
Diaz Llorente, C., Colinge, J.-P., Martinie, S., Cristoloveanu, S., Wan, J., Le Royer, C., Ghibaudo, G., Vinet, M.
Publikováno v:
In Solid State Electronics September 2019 159:26-37
Autor:
Diaz Llorente, C., Le Royer, C., Batude, P., Fenouillet-Beranger, C., Martinie, S., Lu, C.-M.V., Allain, F., Colinge, J.-P., Cristoloveanu, S., Ghibaudo, G., Vinet, M.
Publikováno v:
In Solid State Electronics June 2018 144:78-85
Autor:
Yu, R., Nazarov, A.N., Lysenko, V.S., Das, S., Ferain, I., Razavi, P., Shayesteh, M., Kranti, A., Duffy, R., Colinge, J.-P.
Publikováno v:
In Solid State Electronics December 2013 90:28-33