Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Colin G. McKay"'
Autor:
Fedor V. Sharov, Stephen J. Moxim, Gaddi S. Haase, David R. Hughart, Colin G. McKay, Patrick M. Lenahan
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 22:322-331
Autor:
Stephen J. Moxim, Fedor V. Sharov, David R. Hughart, Gaddi S. Haase, Colin G. McKay, Elias B. Frantz, Patrick M. Lenhan
Publikováno v:
The Review of scientific instruments. 93(11)
We demonstrate the ability of a relatively new analytical technique, near-zero-field magnetoresistance (NZFMR), to track atomic-scale phenomena involved in the high-field stressing damage of fully processed Si metal-oxide-semiconductor field-effect t
Autor:
Fedor V. Sharov, Stephen. J. Moxim, Patrick M. Lenahan, David R. Hughart, Gaddi S. Haase, Colin. G. McKay
Publikováno v:
2021 IEEE International Integrated Reliability Workshop (IIRW).
Autor:
Ryan J. Waskiewicz, Chadwin D. Young, Patrick M. Lenahan, Nicholas J. Harmon, James P. Ashton, Colin G. Mckay, Kenneth J. Myers, Michael E. Flatté, Stephen J. Moxim
Publikováno v:
IEEE Transactions on Nuclear Science. 66:428-436
We demonstrate that a new technique, near-zero field magnetoresistance (NZFMR) spectroscopy, can explore radiation damage in a wide variety of devices in a proof-of-concept study. The technique has great potential for the study of atomic-scale mechan
Autor:
Stephen J. Moxim, Fedor V. Sharov, David R. Hughart, Gaddi S. Haase, Colin G. McKay, Patrick M. Lenahan
Publikováno v:
Applied Physics Letters. 120:063502