Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Colin E. Jones"'
Publikováno v:
Physics of Narrow Gap Semiconductors ISBN: 9783540111917
In summary, we have applied various deep level spectroscopy techniques to characterize nonradiative recombination centers at near mid-gap and at 3/4 Eg in p-type Hg1-xCdxTe for 0.2 < x < 0.4. The near mid-gap center D1 in bulk grown p-tpye Hg1-xCdxTe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d187f20b2a4226950e20347c2197a65
https://doi.org/10.1007/3-540-11191-3_76
https://doi.org/10.1007/3-540-11191-3_76
Autor:
Robert Cook, Davis Alan Lange, Gregg K. Dudoff, Glenn T. Kincaid, John Roussis, Paul Vu, Darrel Endres, Samuel C. H. Wang, Jeffery L. Heath, Michael L. Winn, Colin E. Jones, Steven R. Jost
Publikováno v:
SPIE Proceedings.
This paper discusses the design, architecture, and performance of a 6000 element Indium Antimonide Infrared focal plane array. The focal plane array architecture allows for any N x 1000 element sized array to be constructed from its base elements. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72c7a9b1f720b67b7b2f909bbb84fddb
https://doi.org/10.1117/12.372653
https://doi.org/10.1117/12.372653
Autor:
Edit Braunstein, Andreas Stintz, Colin E. Jones, Azar Alizadeh, F Sharifi, Christopher Fred Keimel, Lauraine Denault, J Grande, Kenneth Roger Conway, David Cecil Hays, Seth T. Taylor, Kasiraman Krishnan, Sanjay Krishna, R Klinger
Publikováno v:
Microscopy and Microanalysis. 12:604-605
Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2005
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cb1bce2039d5584362a3e1be9d5209a
https://doi.org/10.1017/s1431927606066086
https://doi.org/10.1017/s1431927606066086
Modeling of electrical characteristics of midwave type II InAs∕GaSb strain layer superlattice diodes
Autor:
Vishnu Gopal, Lorenzo Faraone, Colin E. Jones, Jean-Baptiste Rodriguez, Elena Plis, Sanjay Krishna
Publikováno v:
Journal of Applied Physics. 104:124506
This paper reports the results of modeling of electrical characteristics of midinfrared type II InAs∕GaSb strain layer superlattice (SLS) diode with p-on-n polarity. Bulk based model with the effective band gap of SLS material has been used in mode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38d97b447296444b6aed36675271db34
https://doi.org/10.1063/1.3042232
https://doi.org/10.1063/1.3042232
Autor:
Sang Jun Lee, G. Bishop, Colin E. Jones, L. R. Dawson, Vishnu Gopal, Yagya D. Sharma, Elena Plis, Jean-Baptiste Rodriguez, Sanjay Krishna, Ha Sul Kim
Publikováno v:
Applied Physics Letters. 91:133512
We report on high operating temperature midwave infrared detectors based on type II InAs∕GaSb superlattices (SLs) with a p-on-n polarity. All InAs∕GaSb SLs photodiodes reported so far have a n-on-p polarity with a thin InAs n-type top contact, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f271abaf23f711b11ed1f402057b1f33
https://doi.org/10.1063/1.2790078
https://doi.org/10.1063/1.2790078
Publikováno v:
Journal of Applied Physics. 52:5148-5158
An electrically active complex called the X center has long been known in indium‐doped silicon. Similar defects have now been associated with the other Group IIIA elements in silicon. These X centers are acceptors with energies approximately 80% of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c009eef4d14aea030872243608501091
https://doi.org/10.1063/1.329415
https://doi.org/10.1063/1.329415
Publikováno v:
Journal of Applied Physics. 44:5402-5410
Low-temperature photoluminescence spectra are presented for Si crystals which have been irradiated with high-energy electrons. Studies of isochronal annealing, stress effects, and the temperature dependences of the luminescence are used to discuss th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d62494ecfbe490a81f13020effe2bf46
https://doi.org/10.1063/1.1662165
https://doi.org/10.1063/1.1662165
Deep level transient spectroscopy studies of trapping parameters for centers in indium‐doped silicon
Autor:
Colin E. Jones, Gregory E. Johnson
Publikováno v:
Journal of Applied Physics. 52:5159-5163
Deep level transient spectroscopy (DLTS) has been used to measure the low‐temperature trapping parameters of defects in indium‐doped silicon. Substitutional indium at Ev +0.15 eV, the indium–X center at Ev +0.11 eV, and two deeper indium relate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f922a3f47164d0e316f897547a6fb015
https://doi.org/10.1063/1.329416
https://doi.org/10.1063/1.329416
Autor:
David Embree, Colin E. Jones
Publikováno v:
Journal of Applied Physics. 47:5365-5371
A luminescence band observed at 4.77 eV (260 nm) in crystalline and at 4.28 eV (290 nm) in amorphous silicon dioxide has been found to correlate with optical and spin resonance measurements of oxygen vacancy concentrations in a series of irradiated s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e39305b533990e72872d841e67306faf
https://doi.org/10.1063/1.322562
https://doi.org/10.1063/1.322562