Zobrazeno 1 - 10
of 131
pro vyhledávání: '"Colin C. McAndrew"'
Autor:
Saeid Karimpour, Michael Sekyere, Isaac Bruce, Emmanuel Nti Darko, Degang Chen, Colin C. McAndrew, Doug Garrity, Xiankun Jin, Ilhan Hatirnaz, Chen He
Publikováno v:
Sensors, Vol 24, Iss 21, p 6789 (2024)
This paper introduces a systematic approach to the design of Direct Current-to-Digital Converter (DIDC) specifically engineered to overcome the limitations of traditional current measurement methodologies in System-on-Chip (SoC) designs. The proposed
Externí odkaz:
https://doaj.org/article/e1bfdcdda8c245a29de180c1c9f0c5b2
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 813-824 (2020)
This paper details a robust parameter extraction flow for the PSPHV LDMOS transistor model. The procedure uses a global scaling parameter set and accounts for self-heating. We describe how to determine parameters associated with important physical ef
Externí odkaz:
https://doaj.org/article/c83994cca80d44c280b26c972f9740d4
Autor:
Marcel N. Tutt, Colin C. McAndrew
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 2, Pp 90-98 (2016)
We present a compact model of the pn-junction for power device analysis using a physically based and numerically stable version of the approach proposed by Linvill in the 1950s. Problems with the original Linvill formulation have been eliminated by u
Externí odkaz:
https://doaj.org/article/9b79fc4fff33458e9dbec4c41a9f3cd7
Autor:
Colin C. McAndrew, Geoffrey J. Coram, Kiran K. Gullapalli, J. Robert Jones, Laurence W. Nagel, Ananda S. Roy, Jaijeet Roychowdhury, Andries J. Scholten, Geert D. J. Smit, Xufeng Wang, Sadayuki Yoshitomi
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 5, Pp 383-396 (2015)
Verilog-A is the de facto standard language that the semiconductor industry uses to define compact models. Unfortunately, it is easy to write models poorly in Verilog-A, and this can lead to unphysical model behavior, poor convergence, and difficulty
Externí odkaz:
https://doaj.org/article/de521a7000394a98993c81e87c6a9ad3
Autor:
Xiaorui Jie, Ronald van Langevelde, Kejun Xia, Lei Chao, Colin C. McAndrew, Qilin Zhang, Matthew Bacchi, Wuxia Li
Publikováno v:
2023 35th International Conference on Microelectronic Test Structure (ICMTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccdf966b4d0bafe1ed84f18e65e3c2ab
https://doi.org/10.1109/icmts55420.2023.10094091
https://doi.org/10.1109/icmts55420.2023.10094091
Autor:
Kejun Xia, Colin C. McAndrew
Publikováno v:
IEEE Transactions on Electron Devices. 68:4834-4841
This article presents a distributed analysis of 2-D plate capacitors with resistive top and bottom plates, which results in two coupled partial differential equations in two variables. The exact solutions for the input impedance of a rectangular capa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f4ecb06234dbefa83ed1896b0f636f2
https://doi.org/10.1109/ted.2021.3105947
https://doi.org/10.1109/ted.2021.3105947
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 39:2812-2821
This article shows how to properly define modulated flicker noise in Verilog-A compact models, and how a simulator should handle flicker noise for periodic and transient analyses. By considering flicker noise in a simple linear resistor driven by a s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f71a96e6c3c7888ba0c0ec4d1239dde
https://doi.org/10.1109/tcad.2020.2966444
https://doi.org/10.1109/tcad.2020.2966444
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 813-824 (2020)
This paper details a robust parameter extraction flow for the PSPHV LDMOS transistor model. The procedure uses a global scaling parameter set and accounts for self-heating. We describe how to determine parameters associated with important physical ef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d3ea5213335678efe5e4956002bd675
https://ieeexplore.ieee.org/document/9146541/
https://ieeexplore.ieee.org/document/9146541/
Publikováno v:
IEEE Transactions on Electron Devices. 66:5246-5253
This article presents PSPHV, a surface-potential-based compact model for laterally diffused MOS (LDMOS) transistors. PSPHV includes a new drain voltage scaling technique that enables accurate modeling of saturation in transistors with nonuniform late
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d76dc0c696bdfecb664737ae5e26edf9
https://doi.org/10.1109/ted.2019.2945832
https://doi.org/10.1109/ted.2019.2945832
Autor:
Colin C. McAndrew
Publikováno v:
IEEE Transactions on Electron Devices. 66:12-18
This paper provides an industry perspective on the present state of compact models for MOS transistors. It highlights the complexity of layout-dependent effects in modern transistors, reviews some common misunderstandings of MOS transistor capacitanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4acab94fffe3a39e8d8e30ee02fce60
https://doi.org/10.1109/ted.2018.2849943
https://doi.org/10.1109/ted.2018.2849943