Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Coleridge, Peter"'
Autor:
Myronov, Maksym, Kycia, Jan, Waldron, Philip, Jiang, Weihong, Barrios, Pedro, Bogan, Alex, Coleridge, Peter, Studenikin, Sergei
Publikováno v:
Small Science. 3
A record-high mobility of holes, reaching 4.3 × 10⁶ cm² V⁻¹s⁻¹ at 300 mK in an epitaxial strained germanium (s-Ge) semiconductor, grown on a standard silicon wafer, is reported. This major breakthrough is achieved due to the development of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1d8dcbac4b05be06dc8e5b395cf8656c
https://doi.org/10.1002/smsc.202200094
https://doi.org/10.1002/smsc.202200094
Autor:
Coleridge, Peter
Publikováno v:
Development in Practice, 1994 Oct 01. 4(3), 224-226.
Externí odkaz:
https://www.jstor.org/stable/4028824
Autor:
Ramanujachar, Kartik, Landheer, Dolf, Raymond, Sylvain, Charbonneau, N. Sylvain, Coleridge, Peter T., Wang, Tahui
Publikováno v:
Proceedings of SPIE; Nov2000 Part 2, Issue 1, p298-303, 6p
Publikováno v:
Proceedings of SPIE; Nov1992, Issue 1, p320-330, 11p
Autor:
Coleridge, Peter1 petercoler@yahoo.co.uk
Publikováno v:
International Journal of Disability, Development & Education. Dec2003, Vol. 50 Issue 4, p455-457. 3p.
Autor:
Coleridge, Peter, Benthall, Jonathan
Publikováno v:
Development in Practice; Jan1994, Vol. 4 Issue 3, p224-226, 3p
Autor:
Taylor, Richard P., Newbury, Richard, Sachrajda, Andrew S., Feng, Yan, Coleridge, Peter T., McCaffrey, John P., Davies, Michael, Bird, Jonathon P.
Publikováno v:
Japanese Journal of Applied Physics; June 1997, Vol. 36 Issue: 6 p3964-3964, 1p
Autor:
Newbury, Richard, Taylor, Richard P., Sachrajda, Andrew S., Feng, Yan, Coleridge, Peter T., Fromhold, Carl Dettmann
Publikováno v:
Japanese Journal of Applied Physics; June 1997, Vol. 36 Issue: 6 p3991-3991, 1p
Autor:
Coleridge, Peter
Publikováno v:
TES: Magazine. 8/29/2003, Issue 4547, p25-25. 1/2p. 1 Black and White Photograph.