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Amorphous Boron Nitride as a Diffusion Barrier to Cu Atoms

Autor: Kaya, Onurcan, Kim, Hyeongjoon, Kim, Byeongkyu, Colombo, Luigi, Shin, Hyeon-Jin, Cole, Ivan, Shin, Hyeon Suk, Roche, Stephan

This study focuses on amorphous boron nitride ($\rm \alpha$-BN) as a novel diffusion barrier for advanced semiconductor technology, particularly addressing the critical challenge of copper diffusion in back-end-of-logic (BEOL) interconnects. Owing to

Externí odkaz: http://arxiv.org/abs/2402.01251

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Impact of Hydrogenation on the Stability and Mechanical Properties of Amorphous Boron Nitride

Autor: Kaya, Onurcan, Colombo, Luigi, Antidormi, Aleandro, Villena, Marco A., Lanza, Mario, Cole, Ivan, Roche, Stephan

Interconnect materials with ultralow dielectric constant, and good thermal and mechanical properties are crucial for the further miniaturization of electronic devices. Recently, it has been demonstrated that ultrathin amorphous boron nitride (aBN) fi

Externí odkaz: http://arxiv.org/abs/2310.18102

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A System of Monitoring and Analyzing Human Indoor Mobility and Air Quality

Autor: Qin, Kyle K., Rahaman, Mohammad S., Ren, Yongli, Cheng, Chi-Tsun, Cole, Ivan, Salim, Flora D.

Human movements in the workspace usually have non-negligible relations with air quality parameters (e.g., CO$_2$, PM2.5, and PM10). We establish a system to monitor indoor human mobility with air quality and assess the interrelationship between these

Externí odkaz: http://arxiv.org/abs/2306.11773

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