Group III nitride-arsenide long wavelength lasers grown by elemental source molecular beam epitaxy.

Autor: Coldren, C. W., Spruytte, S. G., Harris, J. S., Larson, M. C.

Publikováno v: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 2000, Vol. 18 Issue 3, p1480-1483, 4p