Chemical Vapor Deposition of 3C-SiC on [100] Oriented Silicon at low Temperature < 1200°C for Photonic Applications

Autor: Kollmuß, M., Köhler, J., Ou, H., Fan, W., Chaussende, D., Hock, R., Wellmann, P. J.

Publikováno v: Kollmuß, M, Köhler, J, Ou, H, Fan, W, Chaussende, D, Hock, R & Wellmann, P J 2022, ' Chemical Vapor Deposition of 3C-SiC on [100] Oriented Silicon at low Temperature < 1200°C for Photonic Applications ', Materials Science Forum, vol. 1062, pp. 119-124 . https://doi.org/10.4028/p-nshb40

3C-SiC films have been grown on [100] n-doped Si substrates in a horizontal cold wall CVD reactor. Without the use of plasma enhancement, the precursors silane and propane are used to deposit silicon carbide films at T < 1200°C. The structure of the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1202::05dbaaa68ba76b633403b33733e09828
https://orbit.dtu.dk/en/publications/ecba6ce3-c2bd-493c-9335-549c13379286

Development of an inductive heating system for the graphene synthesis by cold wall CVD

Autor: Moura, Jorge Pedro Amaral Duarte de

Since it was firstly isolated, graphene has become one of the most researched nano materials, due to its exciting physical and chemical properties, namely the nearly ballistic transport and high charge mobility, optical transparency and extreme mecha

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______2292::636edfe699dd0096974714a06212636a
http://hdl.handle.net/10773/27754

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Cold wall reactor for ultra-high vacuum high temperature chemical vapor deposition

Autor: Points, Micah Shane

Chemical vapor deposition is a process that enables the deposition of thin films material with a high degree of thickness control, composition and film quality. In an ultra-high vacuum environment (UHV), films of high purity and controlled crystal st

Externí odkaz: http://hdl.handle.net/2152/21675

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