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pro vyhledávání: '"Cmos operational amplifier"'
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Publikováno v:
Journal of Integrated Circuits and Systems. 9:70-79
Analog integrated circuits operating in radiation environments. In previous irradiation experiments performed on a switched-capacitor filter, implemented in a programmable analog array, it was observed a sudden recovery of the device performance duri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ac53c5ababd123b7bf6da8a05ba5ed3
https://doi.org/10.29292/jics.v9i1.390
https://doi.org/10.29292/jics.v9i1.390
Publikováno v:
Materials Science Forum. 1004:1123-1128
In this work, the impact of channel implantations (IMP) on the electrical characteristics of SiC n-and p-MOSFETs and analog SiC-CMOS operational amplifiers (OpAmp) is investigated. For this purpose, MOSFETs and Miller OpAmps with and without IMP were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11768dc4abd19c1f570cb915adb9a24c
https://doi.org/10.4028/www.scientific.net/msf.1004.1123
https://doi.org/10.4028/www.scientific.net/msf.1004.1123
Publikováno v:
International Journal of Engineering and Advanced Technology. 9:296-299
As the CMOS innovation is downsizing, spillage power has gotten one of the most basic structure worries for the chip fashioner. This paper proposes examination on the adequacy of current gracefully testing strategies in cmos operational amplifiers. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::37e89499a93f594e4bfe97d533e3ee72
https://doi.org/10.35940/ijeat.e9313.069520
https://doi.org/10.35940/ijeat.e9313.069520
Publikováno v:
Materials Science Forum. 963:845-848
We modified the active layout of an operational amplifier (op-amp) to exhibit high gamma irradiation resistance of over 100-kGy using our 4H-SiC complementary MOS technology, which can be applied for measuring instruments installed in nuclear power p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56867b2b0885b5ba218b84004bc827c5
https://doi.org/10.4028/www.scientific.net/msf.963.845
https://doi.org/10.4028/www.scientific.net/msf.963.845
Autor:
E. Zencir, Toprak Kayanselçuk
Publikováno v:
Journal of Circuits, Systems and Computers. 30
An ultra-wide bandwidth fully differential two-stage 65[Formula: see text]nm CMOS operational amplifier (Opamp) is presented, which uses a novel bandwidth extension technique called “pole duplication”. This technique is based on relocating the do
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72caf42e8407af007386bf85f0590519
https://doi.org/10.1142/s0218126621502261
https://doi.org/10.1142/s0218126621502261
This paper presents the description and analysis of the design and HSPICEbased simulation results of very low-voltages (LVs) power supplies and highperformance specifications CMOS gate-driven (GD) operational amplifier (OpAmp) circuit. The very LVs C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::47e208190b3ee1c113e7c3a52462b2a2
https://zenodo.org/record/5839626
https://zenodo.org/record/5839626
Publikováno v:
2020 Argentine Conference on Electronics (CAE).
In this work, we present the design and first characterization of an operational amplifier for use at cryogenic temperatures. We show the functionality of the amplifier in a range of temperatures from 12.5K to 273K. Drain current to gate voltage curv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d4391e14ab0696d725b06210126b285
https://doi.org/10.1109/cae48787.2020.9046378
https://doi.org/10.1109/cae48787.2020.9046378
Autor:
Ali Biamanifard, Marziyeh Hemmati, Sadegh Biabanifard, Zohre Khanmohammadi, Mohammad Biabanifard, S. Mehdi Hosseini Largani
Publikováno v:
Analog Integrated Circuits and Signal Processing. 97:195-205
This study describes a new and simple frequency compensation for three stages amplifiers based on revered nested Miller compensation (RNMC) structure. Using only one and small compensation capacitor reduced circuit complexity and die area while shows
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::beab17dc5c2c077e95aef60301b642e4
https://doi.org/10.1007/s10470-018-1117-5
https://doi.org/10.1007/s10470-018-1117-5
Publikováno v:
Journal of Computational and Theoretical Nanoscience. 14:3653-3656
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::021c3a9d45534b115e6d3f9c528792af
https://doi.org/10.1166/jctn.2017.6999
https://doi.org/10.1166/jctn.2017.6999