Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Clinton L. Montgomery"'
Autor:
Shaofeng Yu, Brian K. Kirkpatrick, O'brien Corey Rollin, Larry Liu, Rajesh Khamankar, Oluwamuyiwa Oluwagbemiga Olubuyide, Deborah J. Riley, Anand T. Krishnan, I. Fujii, C. Machala, Clinton L. Montgomery, Brian Hornung, H. Bu, Yiming Gu, Steven L. Prins, T. Lowry, K. Kirmse, James Walter Blatchford, Tad Grider, C. Bowen, G. Shinn, D. Corum, C. Lin, Tony Tae-Hyoung Kim
Publikováno v:
2008 Symposium on VLSI Technology.
A 45 nm high performance technology with 11 level metallization is presented for SOC applications. High performance and density are maintained through new process optimizations that allow the use of less restrictive layouts by eliminating defect gene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e24ec331746ae0843044248c5da8aaa5
https://doi.org/10.1109/vlsit.2008.4588608
https://doi.org/10.1109/vlsit.2008.4588608
Autor:
Tad Grider, Clinton L. Montgomery, D. Mercer, Freidoon Mehrad, Donald S. Miles, Shaofeng Yu, Richard L. Guldi, B.Y. Lin, Yuqing Xu, Yaw S. Obeng, Sue E. Crank, D. Corum, A. J. Griffin, P J. Chen, F.S. Johnson, D.A. Ramappa, X. Liu, Jiong-Ping Lu, Thomas D. Bonifield, Juanita Deloach, Duofeng Yue, Lance S. Robertson, Lindsey H. Hall
Publikováno v:
2006 International Workshop on Junction Technology.
As CMOS technologies move into the 90nm node and beyond, nickel (Ni) self-aligned silicide (SALICIDE) is transitioning from R&D into mainstream SC fabrication. In this paper, advantages and challenges of Ni SALICIDE process technology will be reviewe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::59465f5a5541a0701c33e53de7ce1352
https://doi.org/10.1109/iwjt.2006.220877
https://doi.org/10.1109/iwjt.2006.220877
Autor:
D. Mercer, Melissa M. Hewson, Tad Grider, Clinton L. Montgomery, R. Kuan, L. Tsung, Donald S. Miles, J. Ruan, J. Zhao, April Gurba, C.T. Lin, Jiong-Ping Lu, Y. Xu
Publikováno v:
Digest. International Electron Devices Meeting.
A novel nickel self-aligned silicide (SALICIDE) process technology has been developed for CMOS devices with physical gate length of sub-40 nm. The excess silicidation problem due to edge effect is effectively solved by using a low-temperature, in-sit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6eae55f6a0c71ccde57a5b0c8a7d2356
https://doi.org/10.1109/iedm.2002.1175855
https://doi.org/10.1109/iedm.2002.1175855