Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Cline, Laszlo"'
Autor:
Li, Jingxian, Jalbert, Andrew J., Simakas, Leah S., Geisler, Noah J., Watkins, Virgil J., Cline, Laszlo A., Fuller, Elliot J., Talin, A. Alec, Li, Yiyang
CMOS-based microelectronics are limited to ~150{\deg}C and therefore not suitable for the extreme high temperatures in aerospace, energy, and space applications. While wide bandgap semiconductors can provide high-temperature logic, nonvolatile memory
Externí odkaz:
http://arxiv.org/abs/2410.16067
Autor:
Kim, Diana, Watkins, Virgil, Cline, Laszlo, Li, Jingxian, Sun, Kai, Sugar, Joshua D., Fuller, Elliot J., Talin, A. Alec, Li, Yiyang
Publikováno v:
Advanced Electronic Materials, 2022
Electrochemical random-access memory (ECRAM) is a recently developed and highly promising analog resistive memory element for in-memory computing. One longstanding challenge of ECRAM is attaining retention time beyond a few hours. This short retentio
Externí odkaz:
http://arxiv.org/abs/2210.06658
Autor:
Kim, Diana S., Watkins, Virgil J., Cline, Laszlo A., Li, Jingxian, Sun, Kai, Sugar, Joshua D., Fuller, Elliot J., Talin, A. Alec, Li, Yiyang
Publikováno v:
Advanced Electronic Materials; Jan2023, Vol. 9 Issue 1, p1-8, 8p
