Zobrazeno 1 - 10
of 67
pro vyhledávání: '"Clifford H. Champness"'
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. 212:21-27
The study describes diffusion of elemental sodium into p -type samples of Bridgman-grown CuInSe 2+x , causing a change from p - to n -type behavior at the surface and deep into the material. This resulted in the creation of Na 1s and Se 3d XPS peaks
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. 205:23-28
Using multi-crystalline samples of Bridgman-grown CuInSe2+x, containing added quantities of elemental sodium or Na2Se, detailed XPS measurements were made to determine the location and action of the sodium. Here, the XPS peaks Se 3d, Na 1s and O 1s w
Publikováno v:
Journal of Crystal Growth. 387:36-40
Transport and other measurements have been made on CuInSe2+x samples obtained from Bridgman ingots grown from melts containing controlled amounts of elemental sodium, where x represents the excess of Se over stoichiometry. Thermoelectric power and Ha
Publikováno v:
Thin Solid Films. 519:7337-7340
Ingots containing monocrystals of CuInSe 2 , grown in this laboratory from stoichiometric melts by a one-ampoule Bridgman method, have always been found to be p-type but become n-type if 0.3 at.% or more of elemental sodium is added to the pre-growth
Publikováno v:
Thin Solid Films. 517:2178-2183
Elemental sodium Na0 was introduced into Bridgman melts with the two compositions CuInSe2 (stoichiometric) and CuInSe2.2 (excess Se) in amounts of 0, 0.1, 0.5, 1, 2 and 3 at.%. In the resulting Bridgman-grown ingots brittleness generally increased wi
Autor:
Clifford H. Champness
Publikováno v:
Thin Solid Films. 515:6200-6203
In a group of CuInSe 2 -CdS-ZnO photovoltaic cells, where the absorber was a layer cut from Bridgman-grown p-type CuInSe 2 ingots, electron diffusion lengths at room temperature ( L n ) were estimated by the photocurrent–capacitance method. Dark ca
Publikováno v:
Solar Energy Materials and Solar Cells. 91:791-800
Room temperature measurements were made of electrical conductivity (σ), Hall coefficient (RH) and Seebeck coefficient (α) on filamentary samples of p-type CuInSe2 and CuIn1−xGaxSe2 with x⩽0.3, cut from vertically grown Bridgman ingots. Analysis
Publikováno v:
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).
XPS measurements were made on samples from multi-crystalized ingots grown from Bridgman melts, having a composition corresponding to the formula CuInSe2+x, containing added quantities of elemental sodium or Na2Se. Special attention was paid to the XP
Publikováno v:
Thin Solid Films. :37-41
An evaluation is presented of three photovoltaic cells having the layer structure Au–CuInSe2–CdS–ZnO–In, which were fabricated with monocrystalline p-type wafers cut from Bridgman-grown CuInSe2 ingots. On these cells, measurements were made,
Publikováno v:
Thin Solid Films. :42-45
Ingots containing single crystals of the quaternary alloys CuGaxIn1−xSe2 were grown by a vertical Bridgman method for compositions with x=0.2 and x=0.3. With stoichiometric Cu:(Ga+In):Se starting proportions in the ratio 1:1:2, respectively, all th