Výsledky vyhledávání - "Clerjaud, Bernard"

Characterization of GaAs1-xNx Epitaxial Layers Grown by ALD (atomic layer deposition) method

Autor: Pelosi, C., Musayeva, N. N., Bosi, M., Clerjaud, Bernard, Bénalloul, Paul, Barthou, Carlos, Attolini, G., Bersani, M., Jabbarov, Rasim B., Abdullayeva, S.

Publikováno v: 9TH International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies
9TH International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies, 2009, Poland

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::8d0b759d6e07092b3937ee395fd23991
https://hal.science/hal-00431619

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Heteroepitaxial Movpe Growth Of GaInPN Alloys On Si

Autor: Pelosi, C., Musaeva, N., Attolini, G., Bosi, M., Clerjaud, Bernard, Bénalloul, Paul, Barthou, Carlos, Jabbarov, Rasim B., Abdullayeva, S.

Publikováno v: First International Conference on Material and Information Sciences in High Technologies, MISHT-2007
First International Conference on Material and Information Sciences in High Technologies, MISHT-2007, 2007, Bakou, Azerbaijan

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::e2aaf225103af123e385175db99ea672
https://hal.archives-ouvertes.fr/hal-00431616

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Hydrogen molecules in GaN

Autor: Clerjaud, Bernard, Siozade, Laure, Naud, Claude

Publikováno v: Gordon Research Conference on Defects in Semiconductors
Gordon Research Conference on Defects in Semiconductors, 2004, New London, New Hampshire, United States

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::9e7c6693d6f13a01a168155d008a8188
https://hal.archives-ouvertes.fr/hal-00004705

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Isotope effects in the electronic spectrum of S+ and Se+ in silicon

Autor: Pajot, B., Clerjaud, Bernard, Mc Cluskey, M. D.

Publikováno v: Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 69 (8), pp.085210. ⟨10.1103/PhysRevB.69.085210⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2004, 69 (8), pp.085210. ⟨10.1103/PhysRevB.69.085210⟩

Weak satellites of the strong and sharp parity-forbidden, but symmetry-allowed 1s(A1)→1s(T2) doublet of the S+ donor spectrum in silicon are reported. The low-energy ones are ascribed to a Si isotope effect and the high-energy ones to an S isotope

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::287c2b6befcb83911eb7fc972d3fed2f
https://hal.science/hal-00004750

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