Zobrazeno 1 - 10
of 69
pro vyhledávání: '"Clendenning SB"'
Autor:
Debashis P; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Ryu H; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Steinhardt R; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Buragohain P; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Plombon JJ; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Maxey K; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., O'Brien KP; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Kim R; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Sen Gupta A; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Rogan C; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Lux J; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Tung IC; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Adams D; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Gulseren M; UC Davis, Davis, California 95616, United States., Verma Penumatcha A; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Shivaraman S; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Li H; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Zhong T; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Harlson S; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Tronic T; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Oni A; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Putna S; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Clendenning SB; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Metz M; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Radosavljevic M; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Avci U; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Young IA; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States.
Publikováno v:
Nano letters [Nano Lett] 2024 Oct 09; Vol. 24 (40), pp. 12353-12360. Date of Electronic Publication: 2024 Oct 01.
Autor:
Merkx MJM; Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands., Tezsevin I; Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands., Yu P; Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands., Janssen T; Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands., Heinemans RHGM; Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands., Lengers RJ; Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands., Chen JR; Intel Corporation, Hillsboro, Oregon 97124, USA., Jezewski CJ; Intel Corporation, Hillsboro, Oregon 97124, USA., Clendenning SB; Intel Corporation, Hillsboro, Oregon 97124, USA., Kessels WMM; Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands., Sandoval TE; Department of Chemical and Environmental Engineering, Universidad Técnica Federico Santa María, Santiago 2340000, Chile., Mackus AJM; Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands.
Publikováno v:
The Journal of chemical physics [J Chem Phys] 2024 May 28; Vol. 160 (20).
Autor:
Vaz DC; CIC nanoGUNE BRTA, 20018, Donostia-San Sebastian, Basque Country, Spain. diogocastrovaz@gmail.com., Lin CC; Components Research, Intel Corp., Hillsboro, OR, 97124, USA., Plombon JJ; Components Research, Intel Corp., Hillsboro, OR, 97124, USA., Choi WY; CIC nanoGUNE BRTA, 20018, Donostia-San Sebastian, Basque Country, Spain.; VanaM Inc., 21-1 Doshin-ro 4-gil, Yeongdeungpo-gu, Seoul, Republic of Korea., Groen I; CIC nanoGUNE BRTA, 20018, Donostia-San Sebastian, Basque Country, Spain., Arango IC; CIC nanoGUNE BRTA, 20018, Donostia-San Sebastian, Basque Country, Spain., Chuvilin A; CIC nanoGUNE BRTA, 20018, Donostia-San Sebastian, Basque Country, Spain.; IKERBASQUE, Basque Foundation for Science, 48009, Bilbao, Basque Country, Spain., Hueso LE; CIC nanoGUNE BRTA, 20018, Donostia-San Sebastian, Basque Country, Spain.; IKERBASQUE, Basque Foundation for Science, 48009, Bilbao, Basque Country, Spain., Nikonov DE; Components Research, Intel Corp., Hillsboro, OR, 97124, USA., Li H; Components Research, Intel Corp., Hillsboro, OR, 97124, USA., Debashis P; Components Research, Intel Corp., Hillsboro, OR, 97124, USA., Clendenning SB; Components Research, Intel Corp., Hillsboro, OR, 97124, USA., Gosavi TA; Components Research, Intel Corp., Hillsboro, OR, 97124, USA., Huang YL; Department of Physics, University of California, Berkeley, CA, 94720, USA., Prasad B; Materials Engineering Department, Indian Institute of Science, Bengaluru, 560012, Karnataka, India., Ramesh R; Department of Physics, University of California, Berkeley, CA, 94720, USA.; Department of Physics and Astronomy, Rice University, Houston, TX, 77005, USA., Vecchiola A; Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France., Bibes M; Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France., Bouzehouane K; Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France., Fusil S; Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France., Garcia V; Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France., Young IA; Components Research, Intel Corp., Hillsboro, OR, 97124, USA., Casanova F; CIC nanoGUNE BRTA, 20018, Donostia-San Sebastian, Basque Country, Spain. f.casanova@nanogune.eu.; IKERBASQUE, Basque Foundation for Science, 48009, Bilbao, Basque Country, Spain. f.casanova@nanogune.eu.
Publikováno v:
Nature communications [Nat Commun] 2024 Mar 01; Vol. 15 (1), pp. 1902. Date of Electronic Publication: 2024 Mar 01.
Autor:
Yoo C; Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea., Jeon JW; Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea., Yoon S; Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.; Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea., Cheng Y; Key Laboratory of Polar Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China., Han G; Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.; Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea., Choi W; Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea., Park B; Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea., Jeon G; Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea., Jeon S; Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea., Kim W; Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea., Zheng Y; Key Laboratory of Polar Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China., Lee J; SK Hynix Inc., Icheon, Gyeonggi, 17336, Republic of Korea., Ahn J; SK Hynix Inc., Icheon, Gyeonggi, 17336, Republic of Korea., Cho S; SK Hynix Inc., Icheon, Gyeonggi, 17336, Republic of Korea., Clendenning SB; Components Research, Intel Corporation, Hillsboro, OR, 97124, USA., Karpov IV; Components Research, Intel Corporation, Hillsboro, OR, 97124, USA., Lee YK; Division of Advanced Materials Engineering, Jeonbuk National University, Jeonju, Jeonbuk, 54896, Republic of Korea., Choi JH; Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea., Hwang CS; Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
Publikováno v:
Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2022 Dec; Vol. 34 (50), pp. e2207143. Date of Electronic Publication: 2022 Nov 03.
Autor:
Bashkurov R; Schulich Faculty of Chemistry, Technion-Israel Institute of Technology, Haifa 32000, Israel., Kratish Y; Schulich Faculty of Chemistry, Technion-Israel Institute of Technology, Haifa 32000, Israel., Mokhtarzadeh CC; Intel Corporation, 2501 NE Century Boulevard, Hillsboro, Oregon 97124, United States., Fridman N; Schulich Faculty of Chemistry, Technion-Israel Institute of Technology, Haifa 32000, Israel., Bravo-Zhivotovskii D; Schulich Faculty of Chemistry, Technion-Israel Institute of Technology, Haifa 32000, Israel., Romero PE; Intel Corporation, 2501 NE Century Boulevard, Hillsboro, Oregon 97124, United States.; Pontificia Universidad Católica de Chile, Escula de Ingenieria, Vicuna Mackenna 4860, Macul, Santiago, Chile., Clendenning SB; Intel Corporation, 2501 NE Century Boulevard, Hillsboro, Oregon 97124, United States., Apeloig Y; Schulich Faculty of Chemistry, Technion-Israel Institute of Technology, Haifa 32000, Israel.
Publikováno v:
Inorganic chemistry [Inorg Chem] 2020 Dec 07; Vol. 59 (23), pp. 17488-17496. Date of Electronic Publication: 2020 Nov 24.
Autor:
Kondati Natarajan S; University College Cork, Tyndall National Institute, Lee Maltings, Dyke Parade, Cork T12 R5CP, Ireland.; Department of Electrical Engineering and Automation, Aalto University, Espoo 02150, Finland., Nolan M; University College Cork, Tyndall National Institute, Lee Maltings, Dyke Parade, Cork T12 R5CP, Ireland.; Nanotechnology and Integrated Bioengineering Centre, Ulster University, Shore Road, Co Antrim BT37 OQB, Northern Ireland., Theofanis P; Intel Corporation, 2501 NE Century Blvd., Hillsboro, Oregon 97124, United States., Mokhtarzadeh C; Intel Corporation, 2501 NE Century Blvd., Hillsboro, Oregon 97124, United States., Clendenning SB; Intel Corporation, 2501 NE Century Blvd., Hillsboro, Oregon 97124, United States.
Publikováno v:
ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2020 Aug 12; Vol. 12 (32), pp. 36670-36680. Date of Electronic Publication: 2020 Jul 28.
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