Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Clement Lansalot-Matras"'
Autor:
Wontae Noh, Tae Hyung Park, Satoko Gatineau, Jung Ho Yoon, Deok-Yong Cho, Sanjeev Gautam, Dae Eun Kwon, Cheol Seong Hwang, Sang Woon Lee, Seul Ji Song, Clement Lansalot-Matras, Han-Koo Lee, Kyung Jean Yoon
Publikováno v:
ACS Applied Materials & Interfaces. 9:537-547
The growth characteristics of Ta2O5 thin films by atomic layer deposition (ALD) were examined using Ta(NtBu)(NEt2)3 (TBTDET) and Ta(NtBu)(NEt2)2Cp (TBDETCp) as Ta-precursors, where tBu, Et, and Cp represent tert-butyl, ethyl, and cyclopentadienyl gro
Autor:
Mikko Kaipio, Jaakko Niinistö, Wontae Noh, Sanni Seppälä, Timothee Blanquart, Clement Lansalot-Matras, Mikko Ritala, Markku Leskelä, Jyrki Räisänen, Kenichiro Mizohata
Publikováno v:
Chemistry of Materials. 28:5440-5449
Thin films of rare-earth (RE) oxides (Y2O3, PrOx, Gd2O3, and Dy2O3) were deposited by atomic layer deposition from liquid heteroleptic RE(iPrCp)2(iPr-amd) precursors with either water or ozone as the oxygen source. Film thickness, crystallinity, morp
Autor:
Clement Lansalot-Matras, Wontae Noh, Il Kwon Oh, Gyeongho Lee, Young-Han Shin, Han-Bo-Ram Lee, Chang Wan Lee, Hyungjun Kim, Bo Eun Park
Publikováno v:
The Journal of Physical Chemistry C. 120:5958-5967
Atomic layer deposition (ALD) of HfO2 is a key technology for the application of high dielectric constant gate dielectrics ranging from conventional Si devices to novel nanodevices. The effects of the precursor on the growth characteristics and film
Autor:
Hanearl Jung, Woo-Hee Kim, Clement Lansalot-Matras, Han-Bo-Ram Lee, Il Kwon Oh, Hyungjun Kim, Su Jeong Lee, Chang Wan Lee, Jae Min Myoung
Publikováno v:
Journal of Materials Science. 51:5082-5091
The deposition of high-quality SiO2 films has been achieved through the use of both plasma-enhanced chemical vapor deposition (PE-CVD) and plasma-enhanced atomic layer deposition (PE-ALD) methods using H2Si[N(C2H5)2]2 as a Si precursor. We systematic
Autor:
Chang Wan Lee, Hyungjun Kim, Kyung Yong Ko, Jae Min Myung, Kangsik Kim, Clement Lansalot-Matras, Han-Bo-Ram Lee, Il Kwon Oh, Wontae Noh, Christian Dussarrat, Su Jeong Lee, Zonghoon Lee
Publikováno v:
Chemistry of Materials. 27:148-156
Rare earth oxide (REO) atomic layer deposition (ALD) processes are investigated for hydrophobic coatings. Thermal and plasma-enhanced ALD (PE-ALD) Er2O3 and Dy2O3 are developed using the newly synthesized Er and Dy precursors bis-methylcyclopentadien
Autor:
David Thompson, Schubert S. Chu, Chang Wan Lee, Il Kwon Oh, Woo-Hee Kim, Min Kyu Kim, Clement Lansalot-Matras, Wan-Joo Maeng, Hyungjun Kim
Publikováno v:
Applied Surface Science. 321:214-218
We systematically investigated atomic layer deposition (ALD) of HfO 2 , CeO 2 and Ce-doped HfO 2 thin films on Ge substrates by using tetrakis dimethylamino hafnium (TDMAH) and tris(isopropyl-cyclopentadienyl)cerium [Ce(iPrCp) 3 ] precursors with H 2
Autor:
Clement Lansalot-Matras, Gyeongho Lee, Chang Wan Lee, Hyungjun Kim, Il Kwon Oh, Woo-Hee Kim, Min Kyu Kim, Wontae Noh, Jae Seung Lee, Jusang Park
Publikováno v:
Applied Surface Science. 297:16-21
We systematically investigated the effects of Y doping in HfO 2 dielectric layer, focusing on structural phase transformation and the dielectric properties of the resultant films. Y doping was carried out using atomic layer deposition (ALD) with a no
Autor:
Jinho Ahn, Wontae Noh, In Sung Park, Clement Lansalot-Matras, Yong Chan Jung, Jiehun Kang, Sejong Seong
Publikováno v:
J. Mater. Chem. C. 2:9240-9247
Y2O3 films grown with a new liquid Y precursor, (iPrCp)2Y(iPr-amd), have been investigated in terms of the chemical properties of the precursor, atomic layer deposition (ALD) process, and material characterization of the deposited film, as well as it
Autor:
Clement Lansalot-Matras, Jusang Park, Schubert S. Chu, David Thompson, Wontae Noh, Atif Noori, Jae Seung Lee, Min Kyu Kim, Chang Wan Lee, Il Kwon Oh, Wan-Joo Maeng, Hyungjun Kim
Publikováno v:
Applied Surface Science. 287:349-354
We compared the electrical properties of HfO 2 , HfO 2 /La 2 O 3 , and La-doped HfO 2 gate insulators deposited on Ge substrate using an atomic layer deposition (ALD) process. TDMAH [tetrakis(dimethylamino)hafnium] and La(iprCp) 3 [tris(isopropyl-cyc
Autor:
Jusang Park, Jae Min Myoung, Hyungjun Kim, Jeong Gyu Song, Taejin Choi, Chang Wan Lee, Jae Hoon Jung, Hanearl Jung, Soo-Hyun Kim, Sung Hwan Hwang, Wonseon Lee, Clement Lansalot-Matras
Publikováno v:
ACS Nano. 7:11333-11340
The synthesis of atomically thin transition-metal disulfides (MS2) with layer controllability and large-area uniformity is an essential requirement for their application in electronic and optical devices. In this work, we describe a process for the s