Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Clement Hsingjen Wann"'
Autor:
Guang-Li Luo, Chien Nan Hsiao, Chao-Hsin Chien, Chih-Hsin Ko, Tsung Yu Han, Chi Chung Kei, Chao Ching Cheng, Clement Hsingjen Wann
Publikováno v:
ECS Journal of Solid State Science and Technology. 3:P86-P90
We demonstrate source/drain (S/D) design for GaAs n-type metal-oxide-semiconductor field-effect transistor (NMOSFET) by embedding Ge into recessed S/D region to eliminate the intrinsic issues of the low solid solubility of dopants and low density of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5602871a93fddb0a0a909134fa7f49ff
https://doi.org/10.1149/2.016404jss
https://doi.org/10.1149/2.016404jss
Publikováno v:
IEEE Transactions on Electron Devices. 60:1814-1819
This paper analyzes the 2-D short-channel effect in ultrathin SOI MOSFETs. An empirical, channel length-dependent scale length is extracted from the lateral field slope of a series of numerically simulated devices. We show how this scale length is re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9f91bf8a8061f0d0ff7b0e9a9e35ca9
https://doi.org/10.1109/ted.2013.2255878
https://doi.org/10.1109/ted.2013.2255878
Publikováno v:
IEEE Transactions on Electron Devices. 59:863-866
Junctionless double-gate (DG) MOSFETs are assessed by analyzing the on-off characteristics of the mobile charge density as a function of gate voltage. Compared with undoped DG MOSFETs, junctionless MOSFETs have an inferior on-off charge performance w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67cd9ff0e08180b8fd8ff46f101a58bb
https://doi.org/10.1109/ted.2011.2181392
https://doi.org/10.1109/ted.2011.2181392
Autor:
Wenhe Lin, Cheng-Huang Kuo, C. H. Ko, Clement Hsingjen Wann, Chong Cheng Huang, Shoou-Jinn Chang, Cheng-Hsien Wu, Cheng Ya-Yun
Publikováno v:
Journal of The Electrochemical Society. 158:H626-H629
The authors report the growth of GaN epitaxial layers on nano-patterned Si(001) substrates prepared by the standard facilities used in integrated circuit (IC) industry. It was found that we could achieve high-quality single crystalline GaN by using t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::012b689632a363ccba119627370dbba2
https://doi.org/10.1149/1.3569753
https://doi.org/10.1149/1.3569753
Autor:
Pei Chin Chiu, C.-Y. Chien, D.-W. Fan, Pei-Wen Li, Chih-Hsin Ko, Yu-Chao Lin, H.-K. Lin, Clement Hsingjen Wann, Meng-Kuei Hsieh, Wen-Chin Lee, Ta-Ming Kuan, J.-I. Chyi
Publikováno v:
Solid-State Electronics. 54:505-508
Considerable on-state impact ionization and off-state tunneling leakages are the two principal drawbacks of InAs/AlSb HEMTs, which have a small bandgap and type-II band lineup. This work introduced a wide-bandgap high-k Al2O3 between the gate metal a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b7b64779b044c22b93cb1a1c9391fa1
https://doi.org/10.1016/j.sse.2010.01.014
https://doi.org/10.1016/j.sse.2010.01.014
Autor:
Chih-Hsin Ko, H.-K. Lin, Ta-Wei Fan, Ta-Ming Kuan, J.-I. Chyi, Yu-Chao Lin, Meng-Kuei Hsieh, Wen-Chin Lee, Pei Chin Chiu, Clement Hsingjen Wann, Fan-Hsiu Huang
Publikováno v:
Solid-State Electronics. 54:475-478
Conventional InAs/AlSb HEMTs suffer from chemical instability in materials and high kink current. To avoid these drawbacks, this work proposes a novel layer structure of an InAsSb/AlSb HEMT and a novel two-step passivation process. Performance improv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79122e92712f15a07f4ac14d11bf3447
https://doi.org/10.1016/j.sse.2010.01.013
https://doi.org/10.1016/j.sse.2010.01.013
Autor:
Tze-Liang Lee, Georgios Vellianitis, Blandine Duriez, Clement Hsingjen Wann, M.J.H. van Dal, Carlos H. Diaz, Matthias Passlack
Publikováno v:
Journal of Crystal Growth. 383:9-11
Narrow 〈110〉 Si oriented trenches with high aspect ratio served as template to grow Ge on Si (001) substrate. Cross section high resolution transmission electron microscopy reveals a high crystalline quality relaxed Ge inside the trench with only
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff6e0c18c3d73d8b7c63ab794a139d44
https://doi.org/10.1016/j.jcrysgro.2013.08.019
https://doi.org/10.1016/j.jcrysgro.2013.08.019
Autor:
Wei Wang, Yue Yang, Shu-Han Chen, Pengfei Guo, Chih-Hsin Ko, Ran Cheng, Cheng-Tien Wan, You-Ru Lin, Cheng-Hsien Wu, Yee-Chia Yeo, Bin Liu, Clement Hsingjen Wann, Xiao Gong, Cheng Guo, Chao-Ching Cheng, Qian Zhou, Lanxiang Wang, Man Hon Samuel Owen
Publikováno v:
2013 IEEE International Electron Devices Meeting.
We report the first realization of high performance Ge CMOS using a novel InAlP passivation scheme. The large conduction band and valence band offsets between InAlP and Ge confine electrons and holes within the Ge channel for n-FETs and p-FETs, respe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11dab4c29bc27f7c521dba972ada90b6
https://doi.org/10.1109/iedm.2013.6724700
https://doi.org/10.1109/iedm.2013.6724700
Autor:
Georgios Vellianitis, Clement Hsingjen Wann, Blandine Duriez, Matthias Passlack, K. M. Yin, Martin Christopher Holland, M.J.H. van Dal, B. H. Lee, Krishna Kumar Bhuwalka, C. H. Hsieh, Gerben Doornbos, Z. Q. Wu, Richard Kenneth Oxland, Carlos H. Diaz, Tzer-Min Shen, C. C. Wu, Tze-Liang Lee
Publikováno v:
2012 International Electron Devices Meeting.
We report the first demonstration of scaled Ge p-channel FinFET devices fabricated on a Si bulk FinFET baseline using the Aspect-Ratio-Trapping (ART) technique [1]. Excellent subthreshold characteristics (long-channel subthreshold swing SS=76mV/dec a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0138e0b8168b42995ee0af55265cbe0a
https://doi.org/10.1109/iedm.2012.6479089
https://doi.org/10.1109/iedm.2012.6479089
Autor:
C. C. Huang, Cheng-Huang Kuo, Clement Hsingjen Wann, Y. C. Cheng, Shoou-Jinn Chang, C. H. Ko, W. J. Lin
Publikováno v:
Journal of nanoscience and nanotechnology. 11(2)
We report the growth of GaN epitaxial layer on Si(001) substrate with nano-patterns prepared by dry etching facility used in integrated circuit (IC) industry. It was found that the GaN epitaxial layer prepared on nano-patterned Si(001) substrate exhi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4088d5f59b120d11222dd0a90a21735
https://pubmed.ncbi.nlm.nih.gov/21456167
https://pubmed.ncbi.nlm.nih.gov/21456167