Scalable control of graphene growth on 4H-SiC C-face using decomposing silicon nitride masks

Autor: James Palmer, Walt A. de Heer, Paul L. Voss, Renaud Puybaret, Clement Bouvier, Abdallah Ougazzaden, Claire Berger, John Hankinson

Publikováno v: Journal of Physics D: Applied Physics
Journal of Physics D: Applied Physics, IOP Publishing, 2015, 48 (15), pp.152001. ⟨10.1088/0022-3727/48/15/152001⟩

Patterning of graphene is key for device fabrication. We report a way to increase or reduce the number of layers in epitaxial graphene grown on the C-face (000-1) of silicon carbide by the deposition of a 120 nm to 150nm-thick silicon nitride (SiN) m

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b587b2bd998ebdccf5a99a0bdca5f8e8
http://arxiv.org/abs/1307.6197

Modeling the Impact of the Implementation of a Submerged Structure on Surf Zone Sandbar Dynamics

Autor: Clément Bouvier, Bruno Castelle, Yann Balouin

Publikováno v: Journal of Marine Science and Engineering, Vol 7, Iss 4, p 117 (2019)

Coastal defense strategies based on structures are increasingly unpopular as they are costly, leave lasting scars on the landscape, and sometimes have limited effectiveness or even adverse impacts. While a clear improvement concerning aesthetic consi

Externí odkaz: https://doaj.org/article/c9e25b82b35440cab4a62d7e3d3f79ed