Zobrazeno 1 - 10
of 164
pro vyhledávání: '"Clement, Merckling"'
Autor:
Marina Baryshnikova, Andries Boelen, Luca Ceccon, Vincent Herreman, Sean R. C. McMitchell, Christian Haffner, Clement Merckling
Publikováno v:
Materials, Vol 17, Iss 8, p 1714 (2024)
In this study, we investigate the changes in the crystalline structure of MBE-deposited SrTiO3 layers on Si with different deviations from Sr/Ti stoichiometry as deposited but also after annealing at high temperatures (>600 °C). We show that as-grow
Externí odkaz:
https://doaj.org/article/7fc4941e42ae4677b178e074ee0934d3
Autor:
Pascal Gehring, Clement Merckling, Ruishen Meng, Valentin Fonck, Bart Raes, Michel Houssa, Joris Van de Vondel, Stefan De Gendt
Publikováno v:
APL Materials, Vol 11, Iss 11, Pp 111116-111116-4 (2023)
We report the synthesis and characterization of high-quality thin films of the topological semimetal (Bi2)5(Bi2Se3)7. Cryogenic magneto-transport experiments reveal strong metallic character and spin–orbit coupling in the films. By studying the tem
Externí odkaz:
https://doaj.org/article/3d94b0b674f24048b04bef675ea6c76f
Integration of Li4Ti5O12 Crystalline Films on Silicon Toward High-Rate Performance Lithionic Devices
Autor:
Steven D. Lacey, Elisa Gilardi, Elisabeth Müller, Clement Merckling, Guillaume Saint-Girons, Claude Botella, Romain Bachelet, Daniele Pergolesi, Mario El Kazzi
Publikováno v:
ACS Applied Materials & Interfaces. 15:1535-1544
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef2e72f3de974f96a26e7555ce7d9210
https://doi.org/10.1021/acsami.2c17073
https://doi.org/10.1021/acsami.2c17073
Autor:
Steven Brems, Souvik Ghosh, Quentin Smets, Marie-Emmanuelle Boulon, Andries Boelen, Koen Kennes, Hung-Chieh Tsai, Francois Chancerel, Clement Merckling, Pieter-Jan Wyndaele, Jean-Francois De Marneffe, Tom Schram, Pawan Kumar, Stefanie Sergeant, Thomas Nuytten, Stefan De Gendt, Henry Medina Silva, Benjamin Groven, Pierre Morin, Gouri Sankar Kar, César Lockhart De la Rosa, Didit Yudistira, Joris Van Campenhout, Inge Asselberghs, Alain Phommahaxay
Publikováno v:
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bbbbfb500f3632e1fef09b85aeb6972
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134381
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134381
Autor:
Steven D, Lacey, Elisa, Gilardi, Elisabeth, Müller, Clement, Merckling, Guillaume, Saint-Girons, Claude, Botella, Romain, Bachelet, Daniele, Pergolesi, Mario, El Kazzi
Publikováno v:
ACS applied materialsinterfaces.
The growth of crystalline Li-based oxide thin films on silicon substrates is essential for the integration of next-generation solid-state lithionic and electronic devices including on-chip microbatteries, memristors, and sensors. However, growing cry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::2f78920b0514c85434f712fb97180c0d
https://pubmed.ncbi.nlm.nih.gov/36576942
https://pubmed.ncbi.nlm.nih.gov/36576942
We investigate differential evolution optimization to fit Rutherford backscattering data. The algorithm helps to find, with very high precision, the sample composition profile that best fits the experimental spectra. The capabilities of the algorithm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f5c600d9bf4d7558df4a0c7409fad36
https://lirias.kuleuven.be/handle/20.500.12942/704643
https://lirias.kuleuven.be/handle/20.500.12942/704643
Autor:
Sandro Kraemer, Janni Moens, Michail Athanasakis-Kaklamanakis, Silvia Bara, Kjeld Beeks, Premaditya Chhetri, Katerina Chrysalidis, Arno Claessens, Thomas E. Cocolios, João G. M. Correia, Hilde De Witte, Rafael Ferrer, Sarina Geldhof, Reinhard Heinke, Niyusha Hosseini, Mark Huyse, Ulli Köster, Yuri Kudryavtsev, Mustapha Laatiaoui, Razvan Lica, Goele Magchiels, Vladimir Manea, Clement Merckling, Lino M. C. Pereira, Sebastian Raeder, Thorsten Schumm, Simon Sels, Peter G. Thirolf, Shandirai Malven Tunhuma, Paul Van Den Bergh, Piet Van Duppen, André Vantomme, Matthias Verlinde, Renan Villarreal, Ulrich Wahl
The radionuclide thorium-229 features an isomer with an exceptionally low excitation energy that enables direct laser manipulation of nuclear states. It constitutes one of the leading candidates for use in next-generation optical clocks$^{1–3}$. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3edcd4771aac66ccb4b04fc1dc627a78
http://arxiv.org/abs/2209.10276
http://arxiv.org/abs/2209.10276
Publikováno v:
Journal of Crystal Growth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::236786249c2fdefb20b8a27a83627673
Autor:
Yves Mols, Clement Merckling, A. Vais, Dan Mocuta, Siva Ramesh, Hao Yu, Nadine Collaert, Kristin De Meyer, Marc Schaekers, Naoto Horiguchi, Tsvetan Ivanov, Lin-Lin Wang, Jian Zhang, Yu-Long Jiang
Publikováno v:
IEEE Electron Device Letters. 40:1800-1803
We compare the contact characteristics for Mo, Pd, and Ti on n-InGaAs layer with a range of active donor concentration from $1.6 \times 10^{18}$ cm−3 to $4.8 \times 10^{19}$ cm−3. The Fermi level pinning of 0.18 eV lower than the bottom of n-InGa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d63880b9dac2b584aa0e1ef62530474b
https://doi.org/10.1109/led.2019.2944245
https://doi.org/10.1109/led.2019.2944245
Autor:
Clement Merckling, Islam Ahmed, Tsang Hsuan Tsang, Moloud Kaviani, Jan Genoe, Stefan De Gendt
Publikováno v:
ECS Meeting Abstracts. :1060-1060
With the slowing down of Moore’s law, related to conventional scaling of integrated circuits, alternative technologies will require research effort for pushing the limits of new generations of electronic or photonic devices. Perovskite oxides with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8acbd0106b5eebd0ef4b7d40fa0d72f8
https://doi.org/10.1149/ma2022-01191060mtgabs
https://doi.org/10.1149/ma2022-01191060mtgabs