Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Clemens Vierheilig"'
Autor:
Ulrich T. Schwarz, Ferdinand Scholz, Klaus Thonke, Clemens Vierheilig, Andreas Hangleiter, A. D. Dräger, Andrey Chuvilin, G. J. Beirne, Martin Feneberg, L. Schade, Michael Jetter, Junjun Wang, Peter Michler, Ute Kaiser, Thomas Wunderer, Sebastian Metzner, Robert A. R. Leute, Frank Bertram, Frank Lipski, Jürgen Christen, Stephan Schwaiger
Publikováno v:
physica status solidi (b). 248:549-560
Selective-area epitaxy is used to form three-dimensional (3D) GaN structures providing semipolar crystal facets. On full 2-in. sapphire wafers we demonstrate the realization of excellent semipolar material quality by introducing inverse GaN pyramids.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6114a7b6a4df15a5cd4b5b778bcd1d40
https://doi.org/10.1002/pssb.201046352
https://doi.org/10.1002/pssb.201046352
Autor:
Ulrich T. Schwarz, Clemens Vierheilig, Julia Danhof, Matthias Peter, Berthold Hahn, Tobias Meyer
Publikováno v:
physica status solidi (b). 248:1270-1274
For an InGaN/GaN multiquantum well sample with low threading dislocation density (TDD), temperature-dependent microphotoluminescence measurements were performed. Evaluation of the behavior of the photoluminescence peak energy leads to the conclusion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6b429299efe98d6abb58cfd52b7295f1
https://doi.org/10.1002/pssb.201046108
https://doi.org/10.1002/pssb.201046108
Autor:
Volker Härle, Harald Braun, Werner Wegscheider, Uwe Strauß, Uli Schwarz, Clemens Vierheilig, E. Baur
Publikováno v:
physica status solidi c. 4:179-182
We study the lateral diffusion of photogenerated carriers within InGaN/GaN quantum wells by scanning in the focal plane of our confocal microscope. The photoluminescence (PL) images are analyzed at varying excitation densities in the temperature rang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44631aca5fb2dedc0a2c9965ddccbda6
https://doi.org/10.1002/pssc.200673563
https://doi.org/10.1002/pssc.200673563
Autor:
Markus Horn, Jens Mueller, Jelena Ristic, Bernhard Stojetz, Uwe Strauss, Thomas Hager, Soenke Tautz, Harald Koenig, Adrian Stefan Avramescu, Clemens Vierheilig, Andreas Loeffler, Christoph Walter, Christoph Eichler, Sven Gerhard, Thomas Dobbertin
Publikováno v:
SPIE Proceedings.
In this paper we report recent developments on high power blue laser chips. Reduction of internal losses as well as optimized thermal management had been essential to increase optical output power. R and D samples with average performance of 3W optic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a56e561fe63e3ce325b1deef1f41893
https://doi.org/10.1117/12.2081065
https://doi.org/10.1117/12.2081065
Autor:
Stojetz Bernhard, Thomas Hager, Uwe Strauß, Andreas Löffler, Teresa Wurm, Adrian Stefan Avramescu, Georg Brüderl, Christoph Eichler, Jens Müller, Clemens Vierheilig, Tautz Sönke, Jelena Ristic, André Somers, Harald König
Publikováno v:
2014 IEEE Photonics Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec973c81713140e2b16e6e2766bb64aa
https://doi.org/10.1109/ipcon.2014.6995446
https://doi.org/10.1109/ipcon.2014.6995446
Autor:
Clemens Vierheilig, Andreas Löffler, André Somers, Teresa Wurm, Uwe Strauβ, Adrian Avramescu, Christoph Eichler, Thomas Hager, Georg Brüderl, Jelena Ristic
Publikováno v:
SPIE Proceedings.
Blue and green InGaN-based R&D laser structures on c-plane GaN substrates are investigated. We analyzed carrier injection efficiencies as well as internal quantum efficiencies up to laser threshold. The injection efficiency of the blue laser structur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a2a5bb848fa7787f5357562fb519e21
https://doi.org/10.1117/12.2041298
https://doi.org/10.1117/12.2041298
Autor:
Bernhard Stojetz, Uwe Strauss, Christoph Eichler, Teresa Lermer, Adrian Avramescu, Clemens Vierheilig, Soenke Tautz, Thomas Hager, Georg Bruederl
Publikováno v:
2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEOPR).
Summary form only given. Two fields for laser projection have attended big interest since several years due to the potential of high volume markets. One is the mobile projection; ideally a projection unit embedded in a mobile phone. For customer acce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d016f259b9ef145393764f023cac4cf
https://doi.org/10.1109/cleopr.2013.6599912
https://doi.org/10.1109/cleopr.2013.6599912
Autor:
Oliver Mehl, Stefan Morgott, Georg Brüderl, Uwe Strauß, Christoph Eichler, Sven Gerhard, Thomas Hager, Alfred Lell, Jelena Ristic, Bernhard Stojetz, Sönke Tautz, Clemens Vierheilig, André Somers, Adrian Stefan Avramescu, Teresa Wurm
Publikováno v:
SPIE Proceedings.
InGaN based green laser diodes with output powers up to 50mW are now well established for variety of applications ranging from leveling to special lighting effects and mobile projection of 12lm brightness. In future the highest market potential for v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::202c6fb3b7d2f2454c9b21143a464067
https://doi.org/10.1117/12.2006220
https://doi.org/10.1117/12.2006220
Autor:
Teresa Lermer, Sönke Tautz, Jens Müller, Alfred Lell, Clemens Vierheilig, Georg Brüderl, Bernhard Stojetz, Christoph Eichler, Thomas Hager, Adrian Stefan Avramescu, Jelena Ristic, Uwe Strauss, Fabian Kopp
Publikováno v:
SPIE Proceedings.
There is a big need on R&D concerning visible lasers for projection applications. The pico-size mobile projection on the one hand awaits the direct green lasers with sufficiently long lifetimes at optical powers above 50mW. In this paper we demonstra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b86400e6896588efae16d75195f889c4
https://doi.org/10.1117/12.917469
https://doi.org/10.1117/12.917469
Publikováno v:
physica status solidi c. 6
The optical properties of Nitride-based quantum well devices are affected by internal fields, fluctuation of the composition of the quantum well and nonradiative recombination. In this paper, we present a method to separate these effects by optical s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::075a3d40db9b70e797395beefea168cd
https://doi.org/10.1002/pssc.200880881
https://doi.org/10.1002/pssc.200880881