Výsledky vyhledávání - "Claus Martin Hasenack"

Mechanisms of Cu Electroless Plating onto Si(100) in Diluted HF Acid Solutions Containing CuSO4 or CuCl2

Autor: Alexandre Hashimoto, Sebastiao G. Dos Santos, Claus Martin Hasenack

Publikováno v: ECS Transactions. 11:13-22

Presented in this work are the mechanisms of Cu plating onto (100) Si surfaces in diluted hydrofluoric acid (D-HF) solutions containing CuSO4 or CuCl2. For D-HF/CuSO4 baths, it was observed that: (a) Si dissolution occurs; (b) For each atom of Cu whi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5a522622a7f0db553d67a2df87ed1ba9
https://doi.org/10.1149/1.2910227

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Si ‐ SiO2 Electronic Interface Roughness as a Consequence of Si ‐ SiO2 Topographic Interface Roughness

Autor: Claus Martin Hasenack, Vitor Baranauskas, S. G. dos Santos Fo., M. C. V. Lopes

Publikováno v: Journal of The Electrochemical Society. 143:1021-1025

Numerical calculations were used to assess the probable microscopic distribution of the electric field along or close to the actual Si-SiO 3 interface of a metal oxide semiconductor (MOS) capacitor biased into accumulation. Silicon wafers were oxidiz

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5c8e5c2759e6b0924a7472382aebe225
https://doi.org/10.1149/1.1836575

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Rapid thermal oxidation of silicon with different thermal annealing cycles in nitrogen: Influence on surface microroughness and electrical characteristics

Autor: Claus Martin Hasenack, S G dos Santos Filho, V Baranauskas, M. C. V. Lopes

Publikováno v: Semiconductor Science and Technology. 10:990-996

The influence of two different thermal annealing cycles on the microroughness of the Si-SiO2 interface and on the electrical characteristics of the Si-SiO2 system has been investigated. Experiments were performed growing oxides by rapid thermal oxida

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::82aa1d67357597ee14298d3098ea3254
https://doi.org/10.1088/0268-1242/10/7/015

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A Less Critical Cleaning Procedure for Silicon Wafer Using Diluted HF Dip and Boiling in Isopropyl Alcohol as Final Steps

Autor: Luiz C. Salay, Paul Mertens, Claus Martin Hasenack, Sebastião G. Dos Santos Filho

Publikováno v: Journal of The Electrochemical Society. 142:902-907

This paper reports on the efficiency of a less critical chemical cleaning process on the removal of particulates and metal contamination from the silicon surface. Having completed the entire RCA‐based cleaning process in either nonfiltered or point

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e7cbe57dc767329e4a8a0e5646100664
https://doi.org/10.1149/1.2048555

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Numerical Calculations of the Electrical Effects Induced by Structural Imperfections on MOS Capacitors

Autor: Vitor Baranauskas, M. C. Valente Lopes, Claus Martin Hasenack

Publikováno v: Journal of The Electrochemical Society. 141:1621-1628

As the thickness of gate quality SiO[sub 2] is reduced, minor structural interface imperfections begin to play an important role in device performance and yield. To isolate the effects of a variety of such interface imperfections on electric field di

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::16033aa69a0724fcb8e34483a38e6242
https://doi.org/10.1149/1.2054972

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The Impact of Si / SiO2 Interface Asperities on Breakdown Characteristics of Thin Gate Oxides

Autor: Claus Martin Hasenack, Manoel Cézar Valente Lopes

Publikováno v: Journal of The Electrochemical Society. 139:2909-2912

The effect of Si/SiO 2 interface roughness on SiO 2 breakdown characteristics is investigated by means of numerical calculations. It is shown that similar roughness values of the Si/SiO 2 interface may field different breakdown distributions. It is a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::474355a44ac3ed3cd758ff07e43fe4e9
https://doi.org/10.1149/1.2069005

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Metal contamination of silicon wafers induced by reactive ion etching plasmas and its behavior upon subsequent cleaning procedures

Autor: Ronaldo Domingues Mansano, Claus Martin Hasenack, Patrick Verdonck

Publikováno v: ResearcherID

Reactive ion etching (RIE) causes several types of damage in fabrication of integrated circuits. In this article the metallic contamination content of silicon wafer surfaces after performing RIE plasmas has been measured by total reflection x‐ray f

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::604f53fcff9a2eccb707e71fb31b23b9
https://doi.org/10.1116/1.588426

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Application of plasma etching of resist in multilayer litography

Autor: Ronaldo Domingues Mansano

Publikováno v: Biblioteca Digital de Teses e Dissertações da USP
Universidade de São Paulo (USP)
instacron:USP

Neste trabalho é apresentado o desenvolvimento de um processo de litografia de três camadas, para ser utilizado nos processos de corrosão por plasma dos materiais usados em microeletrônica. Ao mesmo tempo é apresentado um estudo sobre as influê

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd5c0817b2989103c1dfe70520f4acac

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