Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Claus Goessens"'
Autor:
Chris Van Hoof, Claus Goessens, B. Grietens, Natalia A. Perova, V. K. Malyutenko, Vladimir Leonov
Publikováno v:
SPIE Proceedings.
The technology for the small-size focal plane arrays and linear arrays of polycrystalline SiGe microbolometers is developed at IMEC and successfully transferred to its industrial partner XenICs. A NETD of about 100 mK is achievable at the readout lev
Autor:
Claus Goessens, Patrick Merken, Vladimir Leonov, Piet De Moor, Bert Du Bois, Natalia A. Perova, Gerlinde Ruttens, Jan Vermeiren, Chris Van Hoof, Agnes Verbist, Ybe Creten, B. Grietens
Publikováno v:
SPIE Proceedings.
The state-of-the-art characteristics of polycrystalline SiGe microbolometer arrays are reported. An NETD of 100 mK at a time constant of 25 ms is achievable on 14×14 and 200×1 arrays at the system level. It is the result of joint studies targeted a
Autor:
Jan Vermeiren, Natalia A. Perova, Chris Van Hoof, Agnes Verbist, Piet De Moor, Vladimir Leonov, B. Grietens, Claus Goessens, Bert Du Bois
Publikováno v:
SPIE Proceedings.
The state-of-the-art characteristics of micromachined polycrystalline SiGe microbolometer arrays are reported. An average NETD of 85 mK at a time constant of 14 ms is already achievable on typical self-supported 50 μm pixels in a linear 64-element a
Autor:
Vladimir Leonov, Claus Goessens, Jan Vermeiren, B. Grietens, Chris Van Hoof, Natalia A. Perova, Piet De Moor
Publikováno v:
SPIE Proceedings.
The performance characteristics of polycrystalline SiGe microbolometer arrays are the subject of both design and technological optimizations performed in this work to move the arrays towards the production. An NETD of 90 mK at a time constant of 11 m
Publikováno v:
SPIE Proceedings.
We report on the characterisation of the refractive index homogeneity in large blanks of Czochralski-grown Germanium, for thermal imaging use. With a phase-measuring Twyman-Green interferometer working at 10.6 mu m, a map of the index of refraction w
Publikováno v:
ECS Meeting Abstracts. :1046-1046
During failure analysis on high voltage I3T50 products, it was found that irregular Nsinker regions were present in the top region of the wafer. This Nsinker distortion, also called POCl3 deformation, was shown during failure analysis to be linked to