Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Claude Vaudry"'
Publikováno v:
European Materials Research Society-Spring Meeting 2017 (E-MRS 2017 Spring Meeting)
European Materials Research Society-Spring Meeting 2017 (E-MRS 2017 Spring Meeting), May 2017, Strasbourg, France
HAL
GDR Nanotechnologie pour le THz et le MIR
GDR Nanotechnologie pour le THz et le MIR, Jun 2017, Paris, France
European Materials Research Society-Spring Meeting 2017 (E-MRS 2017 Spring Meeting), May 2017, Strasbourg, France
HAL
GDR Nanotechnologie pour le THz et le MIR
GDR Nanotechnologie pour le THz et le MIR, Jun 2017, Paris, France
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::4e3e0e2b8b2f5838787a364fe3fc2c96
https://hal.science/hal-02431624
https://hal.science/hal-02431624
Autor:
Jean-Claude Keromnès, Fabien Grasset, Ronan Lefort, Nathalie Demarest, Damien Deubel, Maryline Guilloux-Viry, Claude Vaudry
Publikováno v:
Optical Engineering
Optical Engineering, SPIE, 2015, 54 (1), pp.015101. ⟨10.1117/1.OE.54.1.015101⟩
Optical Engineering, 2015, 54 (1), pp.015101. ⟨10.1117/1.OE.54.1.015101⟩
Optical Engineering, SPIE, 2015, 54 (1), pp.015101. ⟨10.1117/1.OE.54.1.015101⟩
Optical Engineering, 2015, 54 (1), pp.015101. ⟨10.1117/1.OE.54.1.015101⟩
International audience; The design and realization of high-quality bandpass optical filters are often very difficult tasks due to the strong correlation of the optical index of dielectric thin films to their final thickness, as observed in many indus
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::08e77093fcfb7aafbe3254eb3bc47892
https://hal.archives-ouvertes.fr/hal-01099437
https://hal.archives-ouvertes.fr/hal-01099437
Autor:
A. Le Corre, L. Henry, Fabrice Clérot, S. Salaun, A. Godefroy, J.C. Keromnes, P. Lamouler, Jean-Claude Simon, Slimane Loualiche, G. Joulie, Claude Vaudry
Publikováno v:
IEEE Photonics Technology Letters. 7:473-475
A polarization insensitive (sensitivity < 1 dB) semi- conductor optical amplifier has been realized at 1.55 pm. The active layer consists of a strain-balanced superlattice structure. Gain polarization insensitivity on a large bandwidth (60 nm) togeth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::986a14b8a2adb9d287b6316ec6a995ba
https://doi.org/10.1109/68.384514
https://doi.org/10.1109/68.384514
Publikováno v:
1993 (5th) International Conference on Indium Phosphide and Related Materials.
A single epitaxy step buried heterostructure laser has been fabricated. The laser was processed by using molecular beam epitaxy (MBE) grown layers, a reactive ion etching technique and self-aligned technology. The dielectric Si/sub x/N/sub y/ was use
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dcb655b5031ecf480af507ccddcaaeb
https://doi.org/10.1109/iciprm.1993.380632
https://doi.org/10.1109/iciprm.1993.380632
Autor:
R. Lever, J. Pleumeekers, Stephane Gosselin, C.J.S. de Matos, J.C. Keromnes, A. Le Corre, H. L’Haridon, S. Salaun, Claude Vaudry, Bertrand Lambert, G. Moisan
Publikováno v:
Proceedings of Semiconducting and Semi-Insulating Materials Conference.
We demonstrate the performance of a semiconductor photorefractive p-i-n diode operating at 1.55 /spl mu/m in the longitudinal quantum-confined Stark geometry. The device structure consists of a semi-insulating GaInAsP/GaInAs multiple quantum well, sa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::526e6461497ea3cdfd9fce04f546712b
https://doi.org/10.1109/sim.1996.571111
https://doi.org/10.1109/sim.1996.571111
Autor:
A. Le Corre, L. Henry, S. Salaun, D. Lecrosnier, Christian Guillemot, Slimane Loualiche, S. Durel, Claude Vaudry
Publikováno v:
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials.
Photoluminescence, Hall effect, and I-V characteristics of heterostructure InP/GaInAs/InP grown by gas source molecular beam epitaxy (MBE) are presented. The structure is chosen as an alternative to AlInAs/GaInAs/AlInAs to avoid the problems related
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::daec40f517ba0f86fca9fcb5e01d5d9b
https://doi.org/10.1109/iciprm.1991.147406
https://doi.org/10.1109/iciprm.1991.147406
Autor:
A. Ginudi, Christian Guillemot, A. Le Corre, Claude Vaudry, D. Lecrosnier, Slimane Loualiche, L. Henry
Publikováno v:
Applied Physics Letters. 55:2099-2101
GaInP material has been used as a high‐gap semiconductor on InP to fabricate Schottky diodes. The experimental results show that the devices exhibit good electrical properties when the ternary strained layer is below the critical thickness. The bes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5396390da1c88791b695a42a16b373e
https://doi.org/10.1063/1.102075
https://doi.org/10.1063/1.102075