Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Claude Jacquet"'
Autor:
P. Vigneshwara Raja, Jean-Christophe Nallatamby, Mohamed Bouslama, Jean-Claude Jacquet, Raphael Sommet, Christophe Chang, Benoit Lambert
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 71:1957-1966
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78ce4f5bb805729ad9e4764c0b0a744d
https://doi.org/10.1109/tmtt.2022.3222190
https://doi.org/10.1109/tmtt.2022.3222190
Autor:
Giuseppe Bellomonte, Bienvenu Atawa, Anatoli Serghei, Nicolas Michel, Nicolas Delpucch, Mourad Oualli, Quentin Levesque, Jean-Claude Jacquet, Stephane Piotrowicz, Emilie Molina, Hermann Sticglaucr, Benoit Lambert, Christian Brylinski, Sylvain L. Delage
Publikováno v:
2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3819675968c62252f434f9c5fd95513d
https://doi.org/10.1109/asdam55965.2022.9966796
https://doi.org/10.1109/asdam55965.2022.9966796
Autor:
Sylvain L. Delage, Nicolas Michel, Jean-Claude Jacquet, M. Shakerzadeh, E. H. T. Teo, Erhard Kohn
Publikováno v:
2022 24th International Microwave and Radar Conference (MIKON).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6f454808a7bc74f96dced6b269a1397
https://doi.org/10.23919/mikon54314.2022.9924627
https://doi.org/10.23919/mikon54314.2022.9924627
Autor:
P. Vigneshwara Raja, Jean-Christophe Nallatamby, Mohamed Bouslama, Jean Claude Jacquet, Raphael Sommet, Christophe Chang, Benoit Lambert
Publikováno v:
2022 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5621ee5f001c000d5597c550c83a77b9
https://doi.org/10.1109/nemo51452.2022.10038964
https://doi.org/10.1109/nemo51452.2022.10038964
Autor:
Stéphane Piotrowicz, N. Michel, M. Oualli, Eric Chartier, Jean-Claude Jacquet, O. Patard, Cedric Lacam, C. Potier, Christian Dua, Piero Gamarra, Philippe Altuntas, Sylvain Delage
Publikováno v:
International Journal of Microwave and Wireless Technologies. 10:39-46
This paper presents performances achieved with InAlGaN/GaN HEMTs with 0.15 µm gate length on SiC substrate. Technology Computer Aided Design simulations were used to optimize the heterostructure. Special attention was paid to the design of the buffe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c4d53d3fc2da769eebf2be3530bb506
https://doi.org/10.1017/s175907871700112x
https://doi.org/10.1017/s175907871700112x
Autor:
Aleš Chvála, Robert Szobolovszký, Jaroslav Kováč, Martin Florovič, Juraj Marek, Luboš Černaj, Patrik Príbytný, Daniel Donoval, Sylvain Laurent Delage, Jean-Claude Jacquet
Publikováno v:
ASME 2018 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems
In this paper, several methods suitable for real time on-chip temperature measurements of power AlGaN/GaN based high-electron mobility transistor (HEMT) grown on SiC substrate are presented. The measurement of temperature distribution on HEMT surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::26c8be9f1da061095547ce9a92d2e889
https://doi.org/10.1115/ipack2018-8256
https://doi.org/10.1115/ipack2018-8256
Autor:
Raphaël Aubry, Stéphane Piotrowicz, Christian Dua, M. Oualli, C. Potier, Raymond Quéré, Marie-Antoinette di Forte-Poisson, Sylvain Laurent, Olivier Jardel, Audrey Martin, Sylvain Delage, O. Patard, Piero Gamarra, Jean-Claude Jacquet, Michel Campovecchio
Publikováno v:
International Journal of Microwave and Wireless Technologies
International Journal of Microwave and Wireless Technologies, Cambridge University Press/European Microwave Association 2015, 7 (3), pp 287-296. ⟨10.1017/S1759078715000094⟩
International Journal of Microwave and Wireless Technologies, Cambridge University Press/European Microwave Association 2015, 7 (3), pp 287-296. ⟨10.1017/S1759078715000094⟩
This paper presents an original characterization method of trapping phenomena in gallium nitride high electron mobility transistors (GaN HEMTs). This method is based on the frequency dispersion of the output-admittance that is characterized by low-fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::34d735dad9f3715d123afdf279845e63
https://doi.org/10.1017/s1759078715000094
https://doi.org/10.1017/s1759078715000094
Autor:
Martin Florovič, Róbert Szobolovszký, Jaroslav Kováč, Aleš Chvála, Jean-Claude Jacquet, Sylvain Laurent Delage
Publikováno v:
Journal of Electrical Engineering
GaN-based HEMTs’ high potential is deteriorated by self-heating during the operation, this has influence on the electrical properties as well as device reliability. This work is focused on an average channel temperature determination of power AlGaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cc47588bbab1ba806fd3074614f2571d
Autor:
Dominique Carisetti, Olivier Jardel, Lény Baczkowski, Jean-Claude Jacquet, Maxime Olivier, Sylvain Delage, Raphaël Aubry, Didier Lancereau, Stéphane Piotrowicz, Marie-Antoinette Poisson, Christian Dua
Publikováno v:
International Journal of Microwave and Wireless Technologies. 6:565-572
This paper presents power results of L-band packaged hybrid amplifiers using InAlN/GaN/SiC HEMT power dies. The high-power densities achieved both in pulsed and continuous wave (cw) modes confirm the interest of such technology for high-frequency, hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d8fbd82a61444e82ce791a80d4d0ed3
https://doi.org/10.1017/s175907871400004x
https://doi.org/10.1017/s175907871400004x
Autor:
Michel Stanislawiak, Yves Mancuso, Jean-Claude Jacquet, Erwan Morvan, Zineb Ouarch, G. Callet, Benoit Mallet-Guy, Jérémy Dufraisse, Christian Dua, Stéphane Piotrowicz, Raphaël Aubry, Eric Chartier, Didier Floriot, Sylvain Delage, Marie-Antoinette Poisson, M. Oualli, Olivier Jardel, N. Sarazin
Publikováno v:
International Journal of Microwave and Wireless Technologies. 2:105-114
The present paper presents an overview of the AlGaN/GaN-based circuits realized over the years. Two technological processes with 0.25 and 0.7 μm gate length allowed one to address applications from L- to Ku-bands. Depending on the process developmen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b30d74a1223d54e52259b01c9d46c263
https://doi.org/10.1017/s1759078710000061
https://doi.org/10.1017/s1759078710000061