Zobrazeno 1 - 10
of 334
pro vyhledávání: '"Claude Chappert"'
Autor:
Claude Chappert, Thibaut Devolder, Giacomo Talmelli, Florin Ciubotaru, S. M. Ngom, Christoph Adelmann
Publikováno v:
Physical Review B. 103
We develop a generic all-inductive procedure to measure the band structure of spin waves in a magnetic thin stripe. In contrast to existing techniques, our method works even if several spin wave branches coexist in the investigated frequency interval
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::301c3219b6ea4cbf99b8d13443435d71
https://doi.org/10.1103/physrevb.103.214431
https://doi.org/10.1103/physrevb.103.214431
Autor:
Damien Rontani, Jérémy Létang, Claude Chappert, J.-P. Adam, Vincent Cros, Stéphanie Girod, Sébastien Petit-Watelot, Myoung-Woo Yoo, Thibaut Devolder, Stéphane Andrieu, Karim Bouzehouane, Marc Sciamanna, Joo-Von Kim
Publikováno v:
Physical Review Letters
Physical Review Letters, American Physical Society, 2019, 123 (14), ⟨10.1103/PhysRevLett.123.147701⟩
Physical Review Letters, American Physical Society, 2019, 123 (14), ⟨10.1103/PhysRevLett.123.147701⟩
We present an experimental study of spin-torque driven vortex self-oscillations in magnetic nanocontacts. We find that above a certain threshold in applied currents, the vortex gyration around the nanocontact is modulated by relaxation oscillations,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ab7e00dc8ed0eb235c8f835d0806720
https://hal.archives-ouvertes.fr/hal-02353048/file/1903.00921.pdf
https://hal.archives-ouvertes.fr/hal-02353048/file/1903.00921.pdf
Autor:
Jacques-Olivier Klein, Wang Kang, Zhaohao Wang, Weisheng Zhao, Gefei Wang, Youguang Zhang, Claude Chappert, Yue Zhang, Dafiné Ravelosona
Publikováno v:
ACM Journal on Emerging Technologies in Computing Systems. 12:1-42
Conventional MOS integrated circuits and systems suffer serve power and scalability challenges as technology nodes scale into ultra-deep-micron technology nodes (e.g., below 40nm). Both static and dynamic power dissipations are increasing, caused mai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d47c08e6f67be9b733f965d9d0ef4080
https://doi.org/10.1145/2663351
https://doi.org/10.1145/2663351
Autor:
Youguang Zhang, Claude Chappert, Jacques-Olivier Klein, Weisheng Zhao, Wang Kang, Dafiné Ravelosona, Liuyang Zhang
Publikováno v:
IEEE Journal on Emerging and Selected Topics in Circuits and Systems. 5:28-39
The emerging spin transfer torque magnetic random access memory (STT-MRAM) promises many attractive features, such as nonvolatile, high speed and low power etc, which enable it to be a promising candidate for the next-generation logic and memory circ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccdbdc3a09dfe4e3b7823efbfffe4c3b
https://doi.org/10.1109/jetcas.2014.2374291
https://doi.org/10.1109/jetcas.2014.2374291
Publikováno v:
IEEE Transactions on Nuclear Science. 61:3258-3264
CMOS downscaling makes advanced memory and computing systems more vulnerable to radiation. Emerging non-volatile memories such as Magnetic RAM (MRAM) are under development to replace SRAM and FLASH memories. Spin Transfer Torque Magnetic Memory (STT-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aec0b025268a3a12cff29e8fb6bf73ae
https://doi.org/10.1109/tns.2014.2370735
https://doi.org/10.1109/tns.2014.2370735
Autor:
Youguang Zhang, Zhaohao Wang, Weisheng Zhao, Dafiné Ravelosona, Wang Kang, Yue Zhang, Jacques-Olivier Klein, Claude Chappert
Publikováno v:
IEEE Transactions on Magnetics. 50:1-4
Thanks to the progress in nonvolatile (NV) devices, such as magnetic tunnel junctions and phase change memories, various NV logic blocks have recently been proposed to overcome energy/delay bottlenecks caused by von Neumann computing architecture. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2c5a5f9e6e576c0293e4a23c08b252f
https://doi.org/10.1109/tmag.2014.2329774
https://doi.org/10.1109/tmag.2014.2329774
Autor:
Weisheng Zhao, Wang Kang, Jacques-Olivier Klein, Claude Chappert, Zheng Li, Youguang Zhang, Dafiné Ravelosona, Yuanqing Chen
Publikováno v:
IEEE Transactions on Nanotechnology. 13:1088-1092
This paper presents a high reliability sensing circuit for the deep nanometer spin-transfer torque magnetic random-access memory (STT-MRAM). This sensing circuit, using a triple-stage sensing operation and source follower charge transfer amplificatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22fd4b26db0ac63fa15055ebaa293758
https://doi.org/10.1109/tnano.2014.2357054
https://doi.org/10.1109/tnano.2014.2357054
Autor:
Weisheng Zhao, Dafiné Ravelosona, Zhaohao Wang, Jacques-Olivier Klein, Wang Kang, Youguang Zhang, Claude Chappert, Zheng Li, Erya Deng
Publikováno v:
IEEE Transactions on Magnetics. 50:1-4
Spin-transfer torque magnetic random access memory (STT-MRAM) has emerged as a promising candidate for the next-generation high-speed, low-power, and scalable nonvolatile memory technology. Its advantageous features have attracted much attention in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f2a328ee9e90d1781526cf71f5ea5af
https://doi.org/10.1109/tmag.2014.2321551
https://doi.org/10.1109/tmag.2014.2321551
Autor:
Weisheng Zhao, Chenxing Deng, Guillaume Agnus, Ivanka Barisic, Diana Dragoe, Dafiné Ravelosona, Claude Chappert, Sylvain Eimer, Abdelkarim Ouerghi, Debora Pierucci, Weiwei Lin
Publikováno v:
The Journal of Physical Chemistry C. 118:13890-13897
Chemical doping in graphene due to polymer molecules adsorption has attracted much recent interest because of the modification of electrical, magnetic, and optical properties of graphene. We show a reversible charge-transfer doping effect in graphene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8cb03700a8f89a06be8e2c16b53eaf4
https://doi.org/10.1021/jp501077t
https://doi.org/10.1021/jp501077t
Autor:
Wang Kang, Weisheng Zhao, Jaques-Olivier Klein, Youguang Zhang, Yue Zhang, Zhaohao Wang, Dafiné Ravelosona, Claude Chappert
Publikováno v:
IEEE Transactions on Magnetics. 50:1-7
Spin transfer torque-based magnetic random access memory (STT-MRAM) is considered as one of the most promising candidates for the next generation of nonvolatile memories; however, its storage density and reliability are currently uncompetitive compar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ab41bf30cd263119b9dcae3b7a40833
https://doi.org/10.1109/tmag.2014.2300836
https://doi.org/10.1109/tmag.2014.2300836