Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Class of operation"'
Autor:
Ali Lotfi, Mahmoud Shahbazi, Walid Issa, Patrick Wheeler, Hiroo Sekiya, Marian K. Kazimierczuk, Frede Blaabjerg
Publikováno v:
IEEE Access, Vol 12, Pp 165918-165927 (2024)
In this paper, the analysis and design of a class-E/Fn inverter using analytically expressions is provided for any grading coefficient m of the MOSFET body junction diode at 50% duty ratio. Generally, the class-E zero-voltage switching (ZVS) and zero
Externí odkaz:
https://doaj.org/article/581836f19f544fd8a834df9d78fabda3
Publikováno v:
IEEE Access, Vol 7, Pp 132841-132850 (2019)
Considering the generator voltage-class-reduction operation will affect the security and economics of the power systems, this paper proposed a method to analyze the feasibility of the voltage-class-reduction scheme. The paper includes two parts: one
Externí odkaz:
https://doaj.org/article/4a045867fce7494790be7d40daa6cca2
Akademický článek
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Autor:
Pereira, Bruno Xavier Mendez
In recent years, there has been a need to increase the capacity and speed of information transmission, so the communication signals used in mobile communications have been improved to meet the expectations. This will be even more significant in futur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2292::b34adf5790913bd3293eb381cbba6140
http://hdl.handle.net/10773/36745
http://hdl.handle.net/10773/36745
Publikováno v:
IEEE Access, Vol 7, Pp 132841-132850 (2019)
Considering the generator voltage-class-reduction operation will affect the security and economics of the power systems, this paper proposed a method to analyze the feasibility of the voltage-class-reduction scheme. The paper includes two parts: one
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7d4183114c36ca2040be0cd61e1d4579
https://ieeexplore.ieee.org/document/8826279/
https://ieeexplore.ieee.org/document/8826279/
Autor:
Arturo Sarmiento-Reyes, M. T. Sanz-Pascual, Nicolás J. Medrano-Marqués, Belén Calvo-López, J. A. Martinez-Nieto
Publikováno v:
Electronics
Volume 7
Issue 12
Electronics, Vol 7, Iss 12, p 423 (2018)
Zaguán. Repositorio Digital de la Universidad de Zaragoza
instname
Volume 7
Issue 12
Electronics, Vol 7, Iss 12, p 423 (2018)
Zaguán. Repositorio Digital de la Universidad de Zaragoza
instname
A highly linear fully self-biased class AB current buffer designed in a standard 0.18 &mu
m CMOS process with 1.8 V power supply is presented in this paper. It is a simple structure that, with a static power consumption of 48 &mu
W, feature
m CMOS process with 1.8 V power supply is presented in this paper. It is a simple structure that, with a static power consumption of 48 &mu
W, feature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d79f68ad90ccec64876e2faf9aaa0c2e
http://zaguan.unizar.es/record/77196
http://zaguan.unizar.es/record/77196
Autor:
Anna Piacibello, Mustazar Iqbal
In this paper, the design and characterization of a GaN HEMT based class-AB power amplifier (PA) operating in LTE communication band (1.9–2.5 GHz) are presented. A model-based design procedure is adopted. Source and load impedances for optimum line
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::10fae7a27d7e49dc98be0c37e06b583f
http://hdl.handle.net/11583/2660106
http://hdl.handle.net/11583/2660106
Akademický článek
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Autor:
Anna Piacibello, Mustazar Iqbal
This paper presents the design and realization of a highly efficient broadband class-F power amplifier (PA) with a multi-harmonic controlled output network. Optimum performance in terms of bandwidth and efficiency is targeted over the frequency band
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0a87f048029f713034043009d1a51516
http://hdl.handle.net/11583/2660105
http://hdl.handle.net/11583/2660105
Akademický článek
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