Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Clarisse Ducruet"'
Autor:
T. Sedoykina, A. Orlov, Jeremy Pereira, Jérémy Alvarez-Hérault, C. Portemont, Clarisse Ducruet, E. Danilkin, E. Smirnov
Publikováno v:
Microelectronic Engineering. 167:6-9
MRAM technology offers the opportunity to provide all the advantages of the most popular types of memory, such as DRAM, SRAM and FLASH with none of its disadvantages. Magnetic tunnel junctions (MTJs) based on CoFeB/MgO/CoFeB structures are very promi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05e0a10c1d71ebbfa5addcddce828548
https://doi.org/10.1016/j.mee.2016.09.010
https://doi.org/10.1016/j.mee.2016.09.010
Autor:
Ricardo C. Sousa, F. Fettar, Lucian Prejbeanu, Clarisse Ducruet, Stéphane Auffret, Bernard Dieny, I. Joumard, A. Chavent, Jyotirmoy Chatterjee, Laurent Vila
Publikováno v:
Physical Review Applied
Physical Review Applied, American Physical Society, 2019, 12 (4), pp.044043. ⟨10.1103/PhysRevApplied.12.044043⟩
Physical Review Applied, 2019, 12 (4), pp.044043. ⟨10.1103/PhysRevApplied.12.044043⟩
Physical Review Applied, American Physical Society, 2019, 12 (4), pp.044043. ⟨10.1103/PhysRevApplied.12.044043⟩
Physical Review Applied, 2019, 12 (4), pp.044043. ⟨10.1103/PhysRevApplied.12.044043⟩
This article reports a type of magnetic tunnel junction (MTJ) with an expanded middle layer, for spin-transfer-torque magnetic random-access memory (STT-MRAM). This data-storage layer of the form Fe-Co-B/W/Co/W/Fe-Co-B sandwiches a ferromagnet with h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68e23976556b7706e7121cee50a046a4
https://hal-cea.archives-ouvertes.fr/cea-02394858
https://hal-cea.archives-ouvertes.fr/cea-02394858
Publikováno v:
20th International Conference on Magnetism ICM
20th International Conference on Magnetism ICM, 2015, Barcelona, Spain. pp.1058-1065, ⟨10.1016/j.phpro.2015.12.175⟩
20th International Conference on Magnetism ICM, 2015, Barcelona, Spain. pp.1058-1065, ⟨10.1016/j.phpro.2015.12.175⟩
International audience; The exchange bias properties of ferromagnetic/antiferromagnetic (F/AF) bilayers depend strongly on both the F and AF bulk properties, and the interfacial uncompensated AF spins that magnetically couple the F and the AF materia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6a41d13a70eb06744e099f321a2f6a7d
https://doi.org/10.1016/j.phpro.2015.12.175
https://doi.org/10.1016/j.phpro.2015.12.175
Autor:
Myckael Mouchel, C. Baraduc, Amandine Bocheux, Jérémy Alvarez-Hérault, Clarisse Ducruet, K. Mackay, Ph. Sabon, Y. Conraux, I. L. Prejbeanu
Publikováno v:
Journal of Physics: Conference Series
Journal of Physics: Conference Series, 2017, 903, pp.012008 ⟨10.1088/1742-6596/903/1/012008⟩
Journal of Physics: Conference Series, IOP Publishing, 2017, 903, pp.012008 ⟨10.1088/1742-6596/903/1/012008⟩
Journal of Physics: Conference Series, 2017, 903, pp.012008 ⟨10.1088/1742-6596/903/1/012008⟩
Journal of Physics: Conference Series, IOP Publishing, 2017, 903, pp.012008 ⟨10.1088/1742-6596/903/1/012008⟩
International audience; Low frequency noise has been studied for two types of magnetic field sensors based on magnetic tunnel junctions (MTJ). The first structure, composed of a few large MTJs, is designed for low noise applications; the second one,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1d6ac20ffacd1b17fa36ef00b7cb3c15
https://insu.hal.science/insu-01661887
https://insu.hal.science/insu-01661887
Autor:
N. Perrissin, Jyotirmoy Chatterjee, Stéphane Auffret, Ricardo C. Sousa, Clarisse Ducruet, Bernard Dieny
Publikováno v:
Applied Physics Letters
Applied Physics Letters, 2017, 110 (20), pp.202401. ⟨10.1063/1.4983159⟩
Applied Physics Letters, American Institute of Physics, 2017, 110 (20), pp.202401. ⟨10.1063/1.4983159⟩
Applied Physics Letters, 2017, 110 (20), pp.202401. ⟨10.1063/1.4983159⟩
Applied Physics Letters, American Institute of Physics, 2017, 110 (20), pp.202401. ⟨10.1063/1.4983159⟩
International audience; The magnetic properties of the perpendicular storage electrode (buffer/MgO/FeCoB/Cap) were studied as a function of annealing temperature by replacing Ta with W and W/Ta cap layers with variable thicknesses. W in the cap boost
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ea4db353fbd66e6f2b4d390c15902bed
https://hal.science/hal-01629546
https://hal.science/hal-01629546
Autor:
Myckael Mouchel, C. Baraduc, Ioan Lucian Prejbeanu, Claude Cavoit, Philippe Sabon, Clarisse Ducruet, Amandine Bocheux, Romain Fons
Publikováno v:
11th IEEE Sensors Applications Symposium
11th IEEE Sensors Applications Symposium, Apr 2016, Catania, Italy. ⟨10.1109/SAS.2016.7479836⟩
SAS
11th IEEE Sensors Applications Symposium, Apr 2016, Catania, Italy. ⟨10.1109/SAS.2016.7479836⟩
SAS
International audience; A high sensitivity 1D magnetic field sensor is developed for spatial applications, in order to replace the heavy search-coils currently used. This new sensor combines a flux concentrator, biasing coils for field modulation and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c399d6308d84ac967f9abff55c86fd79
https://hal.science/hal-01959900/document
https://hal.science/hal-01959900/document
Autor:
Jean-Philippe Attané, Serge Gambarelli, F. Rortais, Matthieu Jamet, Henri Jaffrès, Hanako Okuno, Julie Widiez, Stéphanie Pouget, C. Vergnaud, P. Laczkowski, Simón Oyarzún, Clarisse Ducruet, Juan-Carlos Rojas-Sánchez, Federico Bottegoni, Alain Marty, C. Beigné, J.-M. George, Laurent Vila
Publikováno v:
Journal of the Physical Society of Japan
Journal of the Physical Society of Japan, Physical Society of Japan 日本物理学会, 2017, 86 (1), ⟨10.7566/JPSJ.86.011002⟩
Journal of the Physical Society of Japan, 2017, 86 (1), ⟨10.7566/JPSJ.86.011002⟩
Journal of the Physical Society of Japan, Physical Society of Japan 日本物理学会, 2017, 86 (1), ⟨10.7566/JPSJ.86.011002⟩
Journal of the Physical Society of Japan, 2017, 86 (1), ⟨10.7566/JPSJ.86.011002⟩
The spin–orbit coupling relating the electron spin and momentum allows for spin generation, detection and manipulation. It thus fulfils the three basic functions of the spin field-effect-transistor made of semiconductors. In this paper, we review o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e72b75ab3cd0d92c71f6216dfddeab2c
http://hdl.handle.net/11311/1007038
http://hdl.handle.net/11311/1007038
Autor:
F. Rortais, C. Vergnaud, Jean-Philippe Attané, Matthieu Jamet, Henri Jaffrès, Alain Marty, C. Beigné, Julie Widiez, Clarisse Ducruet, J.-M. George
Publikováno v:
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2016, 94 (17), pp.174426. ⟨10.1103/PhysRevB.94.174426⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2016, 94 (17), pp.174426. ⟨10.1103/PhysRevB.94.174426⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2016, 94 (17), pp.174426. ⟨10.1103/PhysRevB.94.174426⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2016, 94 (17), pp.174426. ⟨10.1103/PhysRevB.94.174426⟩
International audience; Three-terminal devices, where the same ferromagnetic electrode is used for electrical spin injection and detection, is a very easy and powerful tool to probe the spin properties in nonmagnetic materials. For instance, it has b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ecb173b95d1a66c5afa93fec2501f02f
https://hal.archives-ouvertes.fr/hal-01663960/document
https://hal.archives-ouvertes.fr/hal-01663960/document
Autor:
C. Portemont, I. L. Prejbeanu, Antoine Chavent, Ricardo C. Sousa, Clarisse Ducruet, Laurent Vila, Jérémy Alvarez-Hérault, Bernard Dieny
Publikováno v:
Physical Review Applied
Physical Review Applied, American Physical Society, 2016, 6 (3), ⟨10.1103/PhysRevApplied.6.034003⟩
Physical Review Applied, 2016, 6 (3), ⟨10.1103/PhysRevApplied.6.034003⟩
Physical Review Applied, American Physical Society, 2016, 6 (3), ⟨10.1103/PhysRevApplied.6.034003⟩
Physical Review Applied, 2016, 6 (3), ⟨10.1103/PhysRevApplied.6.034003⟩
Understanding quantitatively the heating dynamics in magnetic tunnel junctions (MTJ) submitted to current pulses is very important in the context of spin-transfer-torque magnetic random access memory development. Here we provide a method to probe the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d916b4ae1024e7bb467c92f9dc7ea496
Autor:
Bernard Dieny, C. Portemont, I Lucian Prejbeanu, Clarisse Ducruet, Bernard Rodmacq, Lavinia Elena Nistor
Publikováno v:
IEEE Transactions on Magnetics. 46:1412-1415
The perpendicular magnetic anisotropy (PMA) of Pt/CoFe(B)/MgO bottom electrodes and the tunnel magnetoresistance (TMR) of CoFeB-based magnetic tunnel junctions (MTJ) have been analyzed as a function of Mg thickness for naturally oxidized barriers. Lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f092c747bc8fc2e78d0602f45576c71b
https://doi.org/10.1109/tmag.2010.2045641
https://doi.org/10.1109/tmag.2010.2045641