Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Clarice DI MARTINO"'
Autor:
Edoardo Zanetti, Clarice Di Martino, Fabrizio Roccaforte, Mario S. Alessandrino, Mario Saggio, Alfio Russo, Carlo Venuto, Patrick Fiorenza, B. Carbone, Corrado Bongiorno, Filippo Giannazzo
Publikováno v:
Materials Science Forum
In this work, the origin of the dielectric breakdown of 4H-SiC power MOSFETs was studied at the nanoscale, analyzing devices that failed after extremely long (three months) of high temperature reverse bias (HTRB) stress. A one-to-one correspondence b
Autor:
Roberto PAGANO, Sebania LIBERTINO, Giusy VALVO, Alfio RUSSO, Delfo Nunzio SANFILIPPO, Giovanni CONDORELLI, Clarice DI MARTINO, Beatrice CARBONE, Giorgio FALLICA, Salvatore LOMBARDO
Publikováno v:
Sensors & transducers 14 (2012): 151–159.
info:cnr-pdr/source/autori:R. Pagano, S. Libertino, G. Valvo, A. Russo, D.N. Sanfilippo, G. Condorelli, C. Di Martino, B. Carbone, G. Fallica and S. Lombardo/titolo:Silicon Photomultipliers: Dark Current and its Statistical Spread/doi:/rivista:Sensors & transducers/anno:2012/pagina_da:151/pagina_a:159/intervallo_pagine:151–159/volume:14
Sensors & Transducers, Vol 14-1, Iss Special Issue, Pp 151-159 (2012)
info:cnr-pdr/source/autori:R. Pagano, S. Libertino, G. Valvo, A. Russo, D.N. Sanfilippo, G. Condorelli, C. Di Martino, B. Carbone, G. Fallica and S. Lombardo/titolo:Silicon Photomultipliers: Dark Current and its Statistical Spread/doi:/rivista:Sensors & transducers/anno:2012/pagina_da:151/pagina_a:159/intervallo_pagine:151–159/volume:14
Sensors & Transducers, Vol 14-1, Iss Special Issue, Pp 151-159 (2012)
Aim of this paper is to investigate on a statistical basis at the wafer level the relationship existing among the dark currents of the single pixel compared to the whole Silicon Photomultiplier array. This is the first time to our knowledge that such
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::8fedfa2f2c2e9bdf5e8c1501e70abcfb
https://publications.cnr.it/doc/229558
https://publications.cnr.it/doc/229558
Autor:
Giuseppina Valvo, Alfio Russo, Delfo Sanfilippo, Giovanni Condorelli, Clarice Di Martino, Beatrice Carbone, PierGiorgio Fallica, Roberto Pagano, Sebania Libertino, Salvatore Lombardo
Publikováno v:
The Second International Conference on Sensor Device Technologies and Applications SENSORDEVICES 2011, pp. 109–112, Nice/Saint Laurent du Var, France, August 21-27, 2011
info:cnr-pdr/source/autori:Giuseppina Valvo, Alfio Russo, Delfo Sanfilippo, Giovanni Condorelli, Clarice Di Martino, Beatrice Carbone, PierGiorgio Fallica, Roberto Pagano, Sebania Libertino, Salvatore Lombardo/congresso_nome:The Second International Conference on Sensor Device Technologies and Applications SENSORDEVICES 2011/congresso_luogo:Nice%2FSaint Laurent du Var, France/congresso_data:August 21-27, 2011/anno:2011/pagina_da:109/pagina_a:112/intervallo_pagine:109–112
info:cnr-pdr/source/autori:Giuseppina Valvo, Alfio Russo, Delfo Sanfilippo, Giovanni Condorelli, Clarice Di Martino, Beatrice Carbone, PierGiorgio Fallica, Roberto Pagano, Sebania Libertino, Salvatore Lombardo/congresso_nome:The Second International Conference on Sensor Device Technologies and Applications SENSORDEVICES 2011/congresso_luogo:Nice%2FSaint Laurent du Var, France/congresso_data:August 21-27, 2011/anno:2011/pagina_da:109/pagina_a:112/intervallo_pagine:109–112
The aim of this paper is to investigate on a statistical basis at the wafer level the relationship existing among the dark currents of the single pixel compared to the whole Silicon Photomultiplier array. This is the first time to our knowledge that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::83fafcba5598ea6491768621ab370dea
http://www.cnr.it/prodotto/i/229549
http://www.cnr.it/prodotto/i/229549