Zobrazeno 1 - 10
of 56
pro vyhledávání: '"Clarence Tracy"'
Autor:
Guoqiang Xing, Wen-Cheng Sun, Xusheng Wang, Meng Tao, Clarence Tracy, Yunyu Liu, Laidong Wang
Publikováno v:
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).
In this paper we report a spiking-resistant all-Al rear junction n-type monocrystalline Si solar cell with an efficiency of 18%. This 1×1 inch2 cell is fabricated by ionic liquid based electroplating of Al as the front electrode on an n-type Si sola
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d245a56c3e51dcbce440b75e2b1c8375
https://doi.org/10.1109/pvsc.2016.7750210
https://doi.org/10.1109/pvsc.2016.7750210
Publikováno v:
physica status solidi (a). 210:413-419
The transport of photogenerated minority carriers (photocarriers) across the heterointerface of amorphous silicon (a-Si) and crystalline silicon (c-Si) in a-Si/c-Si heterostructure solar cell is shown in this work to critically depend on the non-Maxw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::970f47aa883a30e444da142a04cac0ae
https://doi.org/10.1002/pssa.201228277
https://doi.org/10.1002/pssa.201228277
Publikováno v:
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).
This paper reports aluminum (Al) electroplating as the metallization technique for the front finger electrode on n-type silicon (Si) in crystalline-Si solar cells. The development of the Al electroplating process is motivated by the limited reserves
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2faf11b9648ead071004bb39e59a5377
https://doi.org/10.1109/pvsc.2015.7355874
https://doi.org/10.1109/pvsc.2015.7355874
Autor:
Stanislau Herasimenka, Stuart Bowden, Clarence Tracy, Christiana B. Honsberg, William J. Dauksher
Publikováno v:
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).
Silicon heterostructures solar cells have very low surface recombination and the resulting cells can achieve high open circuit voltages. We have demonstrated an open circuit voltage for a silicon solar cell at 753 mV. We show high lifetimes on textur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1ee6e2d659d9de1b62081e2dd170db8
https://doi.org/10.1109/pvsc.2014.6924986
https://doi.org/10.1109/pvsc.2014.6924986
Publikováno v:
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).
This paper reports Al electroplating on a Si substrate using a room-temperature ionic liquid for the metallization of Si solar cells. The ionic liquid electrolyte was prepared by mixing anhydrous AlCl 3 and 1-ethyl-3-methylimidazolium tetrachloroalum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d79effef298ec01180841daa1220f4f1
https://doi.org/10.1109/pvsc.2014.6925446
https://doi.org/10.1109/pvsc.2014.6925446
Publikováno v:
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).
The photovoltaics industry is expected to slowly transition from p-type mono-Si cells to n-type mono-Si over the next several years. Diffusion of boron into silicon to fabricate a p+ emitter can result in an efficiency-reducing boron rich layer (BRL)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdf4cc50b030b6eb0362a56fff999f17
https://doi.org/10.1109/pvsc.2014.6925002
https://doi.org/10.1109/pvsc.2014.6925002
Autor:
Stanislau Herasimenka, Christiana B. Honsberg, William J. Dauksher, Clarence Tracy, Stuart Bowden
Publikováno v:
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).
A novel process flow, which can allow the formation of interdigitated p- and n-type a-Si strips and corresponding transparent conductive oxide (TCO) and metal layers for silicon heterojunction interdigitated back contact (SHJ-IBC) solar cells using o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ef51133912233138012be5eaad6ccd2
https://doi.org/10.1109/pvsc.2014.6925434
https://doi.org/10.1109/pvsc.2014.6925434
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:1489-1496
This article addresses the problem of Pt electrode etching through the use of a batch load production reactive ion etch (RIE) tool to study etching characteristics and the cleanliness of patterned films with pressure, total gas flow, and percent of C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34524d179587a677b252ee2c23ece8d2
https://doi.org/10.1116/1.581175
https://doi.org/10.1116/1.581175
Publikováno v:
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).
We present the development and characterization of n-type mono-Si photovoltaic cells with p+ emitters formed by the rapid thermal annealing of PECVD boron-doped amorphous silicon (a-Si) films. Aluminum metallization was deposited from evaporator and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0515070f2dfc058b0511354de8a29676
https://doi.org/10.1109/pvsc.2013.6744927
https://doi.org/10.1109/pvsc.2013.6744927
Publikováno v:
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).
As crystalline silicon solar cells continue to get thinner, the surfaces of the cell play an ever important role in controlling the cell efficiency. One tool to minimize surface recombination is field effect passivation from the charges present in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50a6b0e9a75d8ae32f2214320ced2658
https://doi.org/10.1109/pvsc.2013.6744377
https://doi.org/10.1109/pvsc.2013.6744377