Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Clarence J. Tracy"'
Autor:
Albert Lamm, Philip James Ong, Clarence J. Tracy, Igor J. Malik, Anthony Paler, Eric S. Johnson, Peter Fejes, Papu D. Maniar, N. David Theodore
Publikováno v:
Journal of Electronic Materials. 33:886-892
Single-crystal Ge-on-insulator (GOI) substrates, made by bonding a hydrogen-implanted Ge substrate to a thermally oxidized, silicon handle wafer, are studied for properties relevant to device fabrication. The stages of the layer transfer process are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b4951c23468b7b5c2654b0475801277
https://doi.org/10.1007/s11664-004-0216-5
https://doi.org/10.1007/s11664-004-0216-5
Autor:
B.N. Engel, W.A. Feil, Gregory W. Grynkewich, Brian R. Butcher, Jon M. Slaughter, M. DeHerrera, Clarence J. Tracy, K. Smith, J. Ren, Kelly W. Kyler, J. Calder, J. Molla, A. Omair, Saied N. Tehrani, M. Durlam, P.J. Naji, Nicholas D. Rizzo, R. Williams
Publikováno v:
IEEE Journal of Solid-State Circuits. 38:769-773
A low-power 1-Mb magnetoresistive random access memory (MRAM) based on a one-transistor and one-magnetic tunnel junction (1T1MTJ) bit cell is demonstrated. This is the largest MRAM memory demonstration to date. In this circuit, the magnetic tunnel ju
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10aa35f3be7f7a6b90079739736eb6bb
https://doi.org/10.1109/jssc.2003.810048
https://doi.org/10.1109/jssc.2003.810048
Publikováno v:
Physical Review B. 59:16047-16052
A serious problem preventing the use of high dielectric oxide materials (e.g., barium-strontium-titanate) for capacitors as part of future dynamic random access memory is the oxidation of or the O diffusion through the electrodes. Platinum electrodes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47ddaccf320b3367fcc5b7169c58d89e
https://doi.org/10.1103/physrevb.59.16047
https://doi.org/10.1103/physrevb.59.16047
Autor:
A. T. Matsuda, Rich Gregory, Peter Fejes, B. A. Baumert, Clarence J. Tracy, L.-H. Chang, N. G. Cave
Publikováno v:
Journal of Materials Research. 13:197-204
Physical and electrical characterization techniques have been applied to the problem of developing a lower temperature process for spin-on Ba0.7Sr0.3TiO3 thin films and capacitors compatible with on-chip aluminum metallization. The films were prepare
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef6c0869feec28308dcfb61b1f45b012
https://doi.org/10.1557/jmr.1998.0026
https://doi.org/10.1557/jmr.1998.0026
Autor:
A. T. Matsuda, T.-L. Tsai, Eiji Fujii, Rich Gregory, S. Hayashi, Peter Fejes, K. Suu, L.-H. Chang, T. Otsuki, N. G. Cave, Clarence J. Tracy, Wei Chen, B. A. Baumert, D. J. Taylor
Publikováno v:
Journal of Applied Physics. 82:2558-2566
Sputtered Ba1−xSrxTiO3 (BST) and SrTiO3 (STO) films and capacitors made with these dielectrics have been characterized with respect to physical and electrical properties. Specific capacitance values included a high of 96 fF/μm2 for BST films depos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d9ab8adf210ea80a8aac070db6e11fc
https://doi.org/10.1063/1.366066
https://doi.org/10.1063/1.366066
Autor:
T. Remmel, T. Otsuki, D. J. Taylor, Peter Fejes, L.-H. Chang, N. G. Cave, Eiji Fujii, K. Suu, T.-L. Tsai, B. A. Baumert, Clarence J. Tracy, Wei Chen, S. Hayashi, Rich Gregory, A. T. Matsuda
Publikováno v:
Integrated Ferroelectrics. 17:165-178
Sputtered Ba1-xSrxTiO3 (BST) and SrTiO3 (STO) films and capacitors made with these dielectrics have been characterized with respect to physical and electrical properties. Specific capacitance values included a high of 120 fF/μm2 for BST films deposi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2990b6f748d8b59bdf6d0103af6df1b2
https://doi.org/10.1080/10584589708012991
https://doi.org/10.1080/10584589708012991
Autor:
Shawn G. Thomas, Papu D. Maniar, Q.J. Hartmann, Xiuling Li, D.A. Ahmari, Eric S. Johnson, B. Roof, Clarence J. Tracy
Publikováno v:
IEEE Electron Device Letters. 26:438-440
In this letter, we report the first demonstration of InGaP/GaAs heterojunction bipolar transistors (HBTs) on germanium-on-insulator (GOI) substrates. We have performed physical characterization of the epitaxial layers to verify the high quality of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c02bf81e6db6fff782f8e2a22d9cc602
https://doi.org/10.1109/led.2005.851132
https://doi.org/10.1109/led.2005.851132
Publikováno v:
ECS Meeting Abstracts. :1382-1382
The global energy demands are predicted to reach 46 terawatts by 2100. Solar photovoltaics has to be deployed at a scale of tens of peak terawatts in order to meet a meaningful portion of the demands. The enormous scale required creates a number of r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6c732567b450b6430c30c0a97359d00
https://doi.org/10.1149/ma2016-02/15/1382
https://doi.org/10.1149/ma2016-02/15/1382
Autor:
Stefan Zollner, Richard B. Gregory, Dina H. Triyoso, Zhiyi Jimmy Yu, David Theodore, Clarence J. Tracy, Yong Liang, Jay Curless, Peter Fejes
Publikováno v:
AIP Conference Proceedings.
We analyze the limits of optical and x‐ray metrology techniques (spectroscopic ellipsometry, x‐ray reflectivity, and powder x‐ray diffraction) applied to thin films in microelectronics, especially metal oxides used as gate dielectrics. By tilti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42bef2f292b943efc941630827d42e78
https://doi.org/10.1063/1.2062957
https://doi.org/10.1063/1.2062957
Autor:
Nicholas D. Rizzo, Gregory W. Grynkewich, Jon M. Slaughter, Peter K. Naji, M. DeHerrera, K. Smith, B. Feil, J. Ren, M. Durlam, A. Omair, J. Calder, Saied N. Tehrani, Bradley N. Engel, R. Williams, Brian R. Butcher, Clarence J. Tracy, J. Molla, Kelly W. Kyler
Publikováno v:
2002 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.02CH37302).
A low power 1 Mb Magnetoresistive Random Access Memory (MRAM) based on a 1-Transistor and 1-Magnetic Tunnel Junction (1T1MTJ) bit cell is demonstrated. This is the largest MRAM memory demonstration to date. In this circuit, MTJ elements are integrate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc27e2bfef1727e7ddc18e86df896142
https://doi.org/10.1109/vlsic.2002.1015073
https://doi.org/10.1109/vlsic.2002.1015073