Výsledky vyhledávání - "Clarence Chan"

Efficacy and Safety of Intravascular Lithotripsy in Lower Extremity Peripheral Artery Disease: A Systematic Review and Meta-Analysis

Autor: Cheuk Pang Wong, Lok Pong Chan, Danise M. Au, Hui Wah Clarence Chan, Yiu Che Chan

Publikováno v: European Journal of Vascular and Endovascular Surgery. 63:446-456

Intravascular lithotripsy (IVL) is a novel technique for plaque modification during endovascular revascularisation for peripheral artery disease (PAD) with severe calcification. The aim of this paper was to perform a systematic review and meta-analys

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cbbbbc2428b1ef3e7b56e97b9a9cef4a
https://doi.org/10.1016/j.ejvs.2021.10.035

Zobrazit plný text záznamu

Wet etch, dry etch, and MacEtch of β-Ga2O3: A review of characteristics and mechanism

Autor: Clarence Chan, Zhongjie Ren, Xiuling Li, Hsien-Chih Huang

Publikováno v: Journal of Materials Research. 36:4756-4770

β-Ga2O3, a promising ultra-wide bandgap material for future high-power electronics and deep-ultraviolet optoelectronics applications, has drawn tremendous attention in recent years due to its wide bandgap of ~ 4.8 eV, high breakdown electric field,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::157c48ef3d0d309d7c3949edaef2a92c
https://doi.org/10.1557/s43578-021-00413-0

Zobrazit plný text záznamu

COVID-19 Impact on Students in Physical Therapist and Physical Therapist Assistant Education Programs in New York and New Jersey: Key Issues and Recommended Responses

Autor: Lynn Rivers, Mary Ellen Vore, Joanne S. Katz, Clarence Chan, Kyle Hewson, Nannette Hyland

Publikováno v: Journal of Physical Therapy Education. 35:279-285

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::70ad300745d1625ea007104c8322c72f
https://doi.org/10.1097/jte.0000000000000205

Zobrazit plný text záznamu

Publisher's Note: 'Programmable vapor-phase metal-assisted chemical etching for versatile high-aspect ratio silicon nanomanufacturing' [Appl. Phys. Rev. 10, 011409 (2023)]

Autor: Lukas L. Janavicius, Julian A. Michaels, Clarence Chan, Dane J. Sievers, Xiuling Li

Publikováno v: Applied Physics Reviews. 10:029901

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3e3ae9ef1a4d8a6d97c25145538d4a14
https://doi.org/10.1063/5.0151279

Zobrazit plný text záznamu

Programmable vapor-phase metal-assisted chemical etching for versatile high-aspect ratio silicon nanomanufacturing

Autor: Lukas L. Janavicius, Julian A. Michaels, Clarence Chan, Dane J. Sievers, Xiuling Li

Publikováno v: Applied Physics Reviews. 10:011409

Defying the isotropic nature of traditional chemical etch, metal-assisted chemical etching (MacEtch) has allowed spatially defined anisotropic etching by using patterned metal catalyst films to locally enhance the etch rate of various semiconductors.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6b37c53953f00b180571bb7b8752b3c8
https://doi.org/10.1063/5.0132116

Zobrazit plný text záznamu

CMOS-Compatible Catalyst for MacEtch: Titanium Nitride-Assisted Chemical Etching in Vapor phase for High Aspect Ratio Silicon Nanostructures

Autor: Clarence Chan, Munho Kim, Nerissa Draeger, Xiuling Li, James J. Coleman, Jeong Dong Kim

Publikováno v: ACS Applied Materials & Interfaces. 11:27371-27377

Metal-assisted chemical etching (MacEtch) is an emerging anisotropic chemical etching technique that has been used to fabricate high aspect ratio semiconductor micro- and nanostructures. Despite its advantages in unparalleled anisotropy, simplicity,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5df255da6e7187000a3d3583d6237c06
https://doi.org/10.1021/acsami.9b00871

Zobrazit plný text záznamu

Plasma-free Anisotropic Etching of GaN

Autor: Xiuling Li, Jennifer K. Hite, Clarence Chan, Shunya Namiki

Publikováno v: Conference on Lasers and Electro-Optics.

We demonstrate doping and growth dependent photo-enhanced metal-assisted chemical etching of homoepitaxial n-GaN on HVPE GaN substrates. Etch rate is comparable to or better than using RIE and there is no degradation of band-edge emission.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ac833634aef4b6cbfb2a8bc9d855a570
https://doi.org/10.1364/cleo_si.2021.sth4j.5

Zobrazit plný text záznamu

ePortfolio and Service-Learning: A Tale of Two Cities Connected by Two High-Impact Practices

Autor: Guiomar Nocito, Monika Ciesielkiewicz, Clarence Chan

Publikováno v: International Journal of Emerging Technologies in Learning (iJET), Vol 15, Iss 05, Pp 119-139 (2020)
DIGI-UV. Repositorio Digital de la Universidad Villanueva
instname

Two different post-secondary professional education programs from two different cities (New York and Madrid) took a similar approach in using ePortfolio to facilitate high-impact behaviors (HIBs) among their students while showing how the ePortfolio

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3bf3c62775b347a5f75791f7bca4d1c

Zobrazit plný text záznamu

Homoepitaxial GaN micropillar array by plasma-free photo-enhanced metal-assisted chemical etching

Autor: Michael A. Mastro, Clarence Chan, Syed B. Qadri, Xiuling Li, Shunya Namiki, Jennifer K. Hite

Publikováno v: Journal of Vacuum Science & Technology A. 39:053212

Metal-assisted chemical etching is a plasma-free open-circuit anisotropic etching method that produces high aspect ratio structures in various semiconductors. Here, for the first time, we demonstrate the formation of ordered micropillar arrays of hom

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4054306da5aa88d51eaafcf2f9b14a7b
https://doi.org/10.1116/6.0001231

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání