Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Clara Bataillon"'
Autor:
Maxime Bouschet, Ulises Zavala-Moran, Vignesh Arounassalame, Rodolphe Alchaar, Clara Bataillon, Isabelle Ribet-Mohamed, Francisco de Anda-Salazar, Jean-Philippe Perez, Nicolas Péré-Laperne, Philippe Christol
Publikováno v:
Photonics, Vol 8, Iss 6, p 194 (2021)
In this paper, the influence of etching depth on the dark current and photo-response of a mid-wave infrared Ga-free T2SL XBn pixel detector is investigated. Two wet chemical etching depths have been considered for the fabrication of a non-passivated
Externí odkaz:
https://doaj.org/article/342d8ffdbdee4e3cbe85c21cec65d69a
Autor:
Clara Bataillon, Jean-Philippe Perez, Rodolphe Alchaar, Daniel Andres Díaz-Thomas, Olivier Saint-Pé, Olivier Gilard, Philippe Christol
Publikováno v:
IEEE Transactions on Nuclear Science. 70:541-548
Autor:
Clara Bataillon, Sylvie Bernhardt, Rodolphe Alchaar, A. Ramiandrasoa, Vignesh Arounassalame, Maxime Bouschet, Philippe Christol, I. Ribet-Mohamed, Jean-Philippe Perez
Publikováno v:
Electro-optical and Infrared Systems: Technology and Applications XVIII and Electro-Optical Remote Sensing XV
Electro-optical and Infrared Systems: Technology and Applications XVIII and Electro-Optical Remote Sensing XV, Sep 2021, Madrid (Online Only), Spain. pp.4, ⟨10.1117/12.2598159⟩
Electro-optical and Infrared Systems: Technology and Applications XVIII and Electro-Optical Remote Sensing XV, Sep 2021, Madrid (Online Only), Spain. pp.4, ⟨10.1117/12.2598159⟩
In this communication, we report on electrical and electro-optical characterizations of InAs/InAsSb Type-II superlattice (T2SL) MWIR photodetector, showing a cut-off wavelength at 5 μm. The device, made of a barrier structure in XBn configuration, w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::183817a22ac9c86b4e8b0be421ba226e
https://hal.archives-ouvertes.fr/hal-03469716
https://hal.archives-ouvertes.fr/hal-03469716
Autor:
Rodolphe Alchaar, Jean-Philippe Perez, I. Ribet-Mohamed, Philippe Christol, Maxime Bouschet, Vignesh Arounassalame, Nicolas Péré-Laperne, Clara Bataillon
Publikováno v:
Electro-optical and Infrared Systems: Technology and Applications XVIII and Electro-Optical Remote Sensing XV
Electro-optical and Infrared Systems: Technology and Applications XVIII and Electro-Optical Remote Sensing XV, Sep 2021, Madrid (Online Only), Spain. pp.2, ⟨10.1117/12.2600113⟩
Electro-optical and Infrared Systems: Technology and Applications XVIII and Electro-Optical Remote Sensing XV, Sep 2021, Madrid (Online Only), Spain. pp.2, ⟨10.1117/12.2600113⟩
In this paper, we study the influence of three different etching depths on electrical and electro-optical properties of nonpassivated T2SL nBn Ga-free pixel detector having a 5μm cut-off wavelength at 150 K. The study shows the strong influence of l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c00a57f6a405731e574639108d9c0ec0
https://hal.archives-ouvertes.fr/hal-03469719
https://hal.archives-ouvertes.fr/hal-03469719
Publikováno v:
European Conference on Radiation and its Effects on Components and Systems (RADECS 2021)
European Conference on Radiation and its Effects on Components and Systems (RADECS 2021), Sep 2021, Vienna, Austria
European Conference on Radiation and its Effects on Components and Systems (RADECS 2021), Sep 2021, Vienna, Austria
International audience
Autor:
Jean-Philippe Perez, Maxime Bouschet, Rodolphe Alchaar, Isabelle Ribet-Mohamed, Vignesh Arounassalame, Francisco de Anda-Salazar, Nicolas Péré-Laperne, Philippe Christol, Clara Bataillon, Ulises Zavala-Moran
Publikováno v:
Photonics
Photonics, MDPI, 2021, 8 (6), pp.194. ⟨10.3390/photonics8060194⟩
Photonics, Vol 8, Iss 194, p 194 (2021)
Volume 8
Issue 6
Photonics, MDPI, 2021, 8 (6), pp.194. ⟨10.3390/photonics8060194⟩
Photonics, Vol 8, Iss 194, p 194 (2021)
Volume 8
Issue 6
International audience; In this paper, the influence of etching depth on the dark current and photo-response of a mid-wave infrared Ga-free T2SL XBn pixel detector is investigated. Two wet chemical etching depths have been considered for the fabricat