Zobrazeno 1 - 10
of 66
pro vyhledávání: '"Circuit level simulation"'
Publikováno v:
Yuanzineng kexue jishu, Vol 58, Iss 5, Pp 1119-1126 (2024)
Single event transient (SET) induced by high energy single particle radiation is the main threat to space application electronic system reliability. The evaluation and measurement of SET is the key to improve the performance of radiation hardened int
Externí odkaz:
https://doaj.org/article/8bd1a179ed6c4c1aaa180daaf808d2a8
Autor:
Rongmei Chen, Wei Chen, Wang Tan, Huabo Sun, Xiaoyu Pan, Lili Ding, Luo Yinhong, Fengqi Zhang, Lei Chen
Publikováno v:
IEEE Transactions on Nuclear Science. 66:866-874
The dependence of single-event transients on strike location is studied and integrated into the bias-dependent single-event model for circuit simulation. Two nondimensional parameters are introduced, including a drift factor and a diffusion factor to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2c1a15fad3d110b49318982189e3bf3
https://doi.org/10.1109/tns.2019.2904716
https://doi.org/10.1109/tns.2019.2904716
Publikováno v:
The Journal of Engineering (2014)
Memristor as a novel and emerging electronic device having vast range of applications suffer from poor frequency response and saturation length. In this paper, the authors present a novel and an innovative device structure for the memristor with two
Externí odkaz:
https://doaj.org/article/1edc373ff4674fa2b5a98b41ef0a7cc3
Publikováno v:
2020 IEEE 7th Uttar Pradesh Section International Conference on Electrical, Electronics and Computer Engineering (UPCON).
Dynamic power dissipation depends on the switching activity of the circuit. In this paper we analyzed power consumption of TG based D flip-flop at different technology nodes and power saving obtained by applying dynamic XOR based clock gating techniq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92703bf76dbe5c6fff1d3a5945f6d6aa
https://doi.org/10.1109/upcon50219.2020.9376565
https://doi.org/10.1109/upcon50219.2020.9376565
Publikováno v:
Nanoscale. 11:22446-22455
Atomic switches are promising candidates as the basic building blocks for large-scale neuromorphic networks due to their tunable switching behaviors. Several neuromorphic components based on atomic switches have been demonstrated, including artificia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e8bdc715e6780bfb8d749de413cc5523
https://doi.org/10.1039/c9nr04455h
https://doi.org/10.1039/c9nr04455h
Akademický článek
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Publikováno v:
Journal of Computational Electronics. 17:273-278
In this study, a simple, reliable, and universal circuit model of bipolar resistive-switching random-access memory (RRAM) is presented for the circuit-level simulation of a high-density cross-point RRAM array. For higher accuracy and reliability, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::213f515c90f3022c60d1b9079c46c62e
https://doi.org/10.1007/s10825-017-1116-2
https://doi.org/10.1007/s10825-017-1116-2
Publikováno v:
2019 93rd ARFTG Microwave Measurement Conference (ARFTG).
In this paper we present a method to alleviate the errors introduced by the bias dependency of the electrostatic discharge or antenna-effect protection diodes when a direct metal-one TRL calibration is employed. The proposed method shows that the two
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f10c1596d6a1d6bf91d8ed1dbf59768
https://doi.org/10.1109/arftg.2019.8739197
https://doi.org/10.1109/arftg.2019.8739197
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
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Autor:
Felice Crupi, David Esseni, Francesco Settino, Pierpaolo Palestri, Marco Lanuzza, Sebastiano Strangio
In the past decade the Tunnel Field Effect Transistor (TFET) relying on band-to-band tunneling (BTBT) has emerged as one of the most promising small slope FETs able to achieve a subthreshold swing (SS) below the room temperature 60 mV/dec limit of co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::796382916e9fd5a1068f1372bdab8910
http://hdl.handle.net/11568/999944
http://hdl.handle.net/11568/999944
