Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Ciprian Florea"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 169-179 (2022)
During development of power Integrated Circuits (IC), several iterations between the design and test/ measurement steps are performed. Computer-aided engineering significantly shortens the product development process because the numerical simulations
Externí odkaz:
https://doaj.org/article/806a0a9f41954f098e6a354124bc4f61
Publikováno v:
Sensors, Vol 22, Iss 19, p 7223 (2022)
Integrated power ICs acting as smart power switches for automotive or industrial applications are often subjected to active thermal cycling. Consequently, they undergo significant self-heating and are prone to various failure mechanisms related to th
Externí odkaz:
https://doaj.org/article/be16d5b7903048f0b1a775a6a563f2e3
Publikováno v:
International Symposium for Design and Technology of Electronics Packages (SIITME)
2020 IEEE 26th International Symposium for Design and Technology in Electronic Packaging (SIITME)
2020 IEEE 26th International Symposium for Design and Technology in Electronic Packaging (SIITME)
An electro-thermal simulation setup using a FEM-based simulator is being calibrated for adequate modelling of the thermal behavior of a DMOS power transistor operating under fast thermal cycling. The computational domain is defined by selecting the e
Autor:
Adrian Bojita, Cristian Boianceanu, Marius Purcar, Dan Simon, Ciprian Florea, Cosmin-Sorin Plesa
Publikováno v:
Microelectronics Reliability. 87:142-150
The metallization of double-diffused metal-oxide semiconductor (DMOS) power devices, which operate under fast thermal cycling (FTC), undergoes thermal induced plastic metal deformation (TPMD). The design of the metallization has a significant impact
Publikováno v:
2019 25th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC).
A finite element method analysis using the concepts of representative volume element and periodic boundary conditions is carried out in order to determine the equivalent linear-elastic properties for a multi-level routing metallization typically foun
Publikováno v:
Proceedings of the 1st International Conference on Numerical Modelling in Engineering ISBN: 9789811322723
Thermal Induced Plastic Metal Deformation (TPMD) in a double-diffused metal-oxide semiconductor (DMOS) power device is highly dependent on the design and material properties of the metallization system corresponding to the technology in which the dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11c9a7b123295b7efdf6b8028c7a354d
https://doi.org/10.1007/978-981-13-2273-0_3
https://doi.org/10.1007/978-981-13-2273-0_3
Publikováno v:
2017 23rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC).
The lifetime of power DMOS devices subjected to Thermal Induced Plastic Metal Deformation (TPMD) is highly dependent on the design of the metallization systems and thus requires the understanding of temperature, stress and strain distribution. This p
Publikováno v:
Web3D
3D Web is a potential platform for publishing and distributing 3D visualizations that have proven useful in enabling the participation of the general public in urban planning. However, technical requirements imposed by detailed and rich real-world pl