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pro vyhledávání: '"Cimbri, Davide"'
Autor:
Cimbri, Davide1 davide.cimbri@glasgow.ac.uk, Weimann, Nils2, Ali Al-Taai, Qusay Raghib1, Ofiare, Afesomeh1, Wasige, Edward1
Publikováno v:
International Journal of Nanoelectronics & Materials. 2021 Special Issue, Vol. 14, p11-19. 9p.
Akademický článek
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Publikováno v:
2022 Fifth IEEE International Workshop on Mobile Terahertz Systems (IWMTS)
2022 Fifth International Workshop on Mobile Terahertz Systems (IWMTS)
2022 Fifth International Workshop on Mobile Terahertz Systems (IWMTS)
We report about an In0.53Ga0.47As/AlAs doublebarrier resonant tunnelling diode (RTD) epitaxial structure that features high-power capabilities at low-terahertz frequencies (∼ 100−300 GHz). The heterostructure was designed using a TCAD-based quant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31ff2ea8a139c8425d3276050c984eba
https://eprints.gla.ac.uk/270501/2/270501.pdf
https://eprints.gla.ac.uk/270501/2/270501.pdf
Resonant tunnelling diode (RTD) technology is emerging as one of the promising semiconductor-based solid-state technologies for terahertz (THz) wireless communications. This paper provides a review of the state-of-the-art, with a focus on the THz RTD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::4ddf62de167f369d9b4572809d55e183
https://eprints.gla.ac.uk/263093/1/263093.pdf
https://eprints.gla.ac.uk/263093/1/263093.pdf
Publikováno v:
2022 Fifth IEEE International Workshop on Mobile Terahertz Systems (IWMTS)
2022 Fifth International Workshop on Mobile Terahertz Systems (IWMTS)
2022 Fifth International Workshop on Mobile Terahertz Systems (IWMTS)
We present an epitaxial structure simulation study of In0.53Ga0.47As/AlAs double-barrier resonant tunnelling diodes (RTD) employing Atlas TCAD quantum transport simulation software developed by SILVACO, which is based on the non-equilibrium Green’s
Autor:
Cimbri, Davide, Yavas-Aydin, Begum, Hartmann, Fabian, Jabeen, Fauzia, Worschech, Lukas, Hofling, Sven, Wasige, Edward
Publikováno v:
IEEE Transactions on Electron Devices; Aug2022, Vol. 69 Issue 8, p4638-4645, 8p