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pro vyhledávání: '"Cignani, Rafael"'
Akademický článek
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Autor:
SANTARELLI, ALBERTO, NIESSEN, DANIEL, CIGNANI, RAFAEL, GIBIINO, GIAN PIERO, TRAVERSO, PIER ANDREA, FLORIAN, CORRADO, FILICORI, FABIO, Dominique M. M. P. Schreurs
A state-space empirical nonlinear model for GaN-based field-effect transistors (FETs) is defined, along with the associated identification procedures based on a recently published double pulse measurement technique. Charge trapping phenomena are deal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4094::9ef064ce905d54f5c9d5b6b4da2a266a
http://hdl.handle.net/11585/383275
http://hdl.handle.net/11585/383275
This paper describes a C-band monolithic high power amplifier implemented with a 0.25 μm AlGaN/GaN HEMT process. The circuit has been designed for use in synthetic aperture radar antenna modules in space applications. The amplifier is made up of two
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4094::baef526c07946622e7bb5fd94163cbf0
http://hdl.handle.net/11585/260682
http://hdl.handle.net/11585/260682
A laboratory setup, along with a set of measurement and identification procedures, have been developed expressly for the characterization of the thermal behavior of AlGaN/GaN HEMTs, suitable for microwave high power amplifier (HPA) design. The setup
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4094::1479bec5f5fd7786e04ee44f25db3f5b
http://hdl.handle.net/11585/145260
http://hdl.handle.net/11585/145260
Akademický článek
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A new modeling approach has been developed for the accurate prediction of the dynamic drain current of GaN FETs. This is accomplished by separation of the low (LF) and high (HF) frequency transistor dynamic behavior.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4094::874b0dd2a099ef334ed4abe5b3ed7337
http://hdl.handle.net/11585/152754
http://hdl.handle.net/11585/152754
Autor:
Gibiino, Gian Piero, Barmuta, Pawel, Cignani, Rafael, Niessen, Daniel, Lewandowski, Arkadiusz, Dobrzanski, Lech, Schreurs, Dominique, Santarelli, Alberto
Publikováno v:
2016 21st International Conference on Microwave, Radar & Wireless Communications (MIKON); 2016, p1-4, 4p
Electron device modelling requires the accurate identification of a suitable parasitic network accounting for the passive structures which connects the intrinsic electron device to the external world. In conventional approaches, the parasitic network
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4094::d6c4a3f081461bf70d39a274703d0265
http://hdl.handle.net/11585/56903
http://hdl.handle.net/11585/56903
Akademický článek
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Autor:
RESCA, DAVIDE, SANTARELLI, ALBERTO, CIGNANI, RAFAEL, FILICORI, FABIO, A. Raffo, G. Vannini, A. Cidronali
Electron device modelling at very high frequencies needs, as a preliminary step, the identification of suitable parasitic elements mainly describing the passive structure used for accessing the intrinsic device. However, when dealing with device mode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4094::a88c494173ac3f41e01ff42a60184f89
http://hdl.handle.net/11585/40154
http://hdl.handle.net/11585/40154