Low-Temperature Electron–Phonon Interaction of Quantum Emitters in Hexagonal Boron Nitride

Autor: Grosso G, Moon H, Ciccarino CJ, Flick J, Mendelson N, Mennel L, Toth M, Aharonovich I, Narang P, Englund DR

© 2020 American Chemical Society. Single photon sources based on atomic defects in layered hexagonal boron nitride (hBN) have emerged as promising solid state quantum emitters with atom-like photophysical and quantum optoelectronic properties. Simil

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______363::3f614c2076c1cd306d03825ab1ca55f0
https://hdl.handle.net/10453/144803

Unconventional non-local relaxation dynamics in a twisted trilayer graphene moiré superlattice.

Autor: Halbertal D; Department of Physics, Columbia University, New York, NY, 10027, USA. dorrihal@gmail.com., Turkel S; Department of Physics, Columbia University, New York, NY, 10027, USA.; Condensed Matter Physics and Materials Science Division, Brookhaven National Laboratory, Upton, NY, 11973, USA., Ciccarino CJ; Harvard John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 02138, USA., Profe JB; Institute for Theory of Statistical Physics, RWTH Aachen University, and JARA Fundamentals of Future Information Technology, 52062, Aachen, Germany., Finney N; Department of Physics, Columbia University, New York, NY, 10027, USA., Hsieh V; Department of Physics, Columbia University, New York, NY, 10027, USA., Watanabe K; Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan., Taniguchi T; International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan., Hone J; Department of Physics, Columbia University, New York, NY, 10027, USA., Dean C; Department of Physics, Columbia University, New York, NY, 10027, USA., Narang P; Harvard John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 02138, USA., Pasupathy AN; Department of Physics, Columbia University, New York, NY, 10027, USA.; Condensed Matter Physics and Materials Science Division, Brookhaven National Laboratory, Upton, NY, 11973, USA., Kennes DM; Institute for Theory of Statistical Physics, RWTH Aachen University, and JARA Fundamentals of Future Information Technology, 52062, Aachen, Germany.; Max Planck Institute for the Structure and Dynamics of Matter, Center for Free Electron Laser Science, Hamburg, Germany., Basov DN; Department of Physics, Columbia University, New York, NY, 10027, USA.

Publikováno v: Nature communications [Nat Commun] 2022 Dec 08; Vol. 13 (1), pp. 7587. Date of Electronic Publication: 2022 Dec 08.

Capturing 3D atomic defects and phonon localization at the 2D heterostructure interface.

Autor: Tian X; Department of Physics and Astronomy and California NanoSystems Institute, University of California, Los Angeles, Los Angeles, CA 90095, USA.; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China., Yan X; Department of Materials Science and Engineering, University of California, Irvine, Irvine, CA 92697, USA.; Irvine Materials Research Institute, University of California, Irvine, Irvine, CA 92697, USA., Varnavides G; Harvard John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA.; Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA., Yuan Y; Department of Physics and Astronomy and California NanoSystems Institute, University of California, Los Angeles, Los Angeles, CA 90095, USA., Kim DS; Department of Physics and Astronomy and California NanoSystems Institute, University of California, Los Angeles, Los Angeles, CA 90095, USA., Ciccarino CJ; Harvard John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA.; Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA., Anikeeva P; Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA., Li MY; Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia., Li LJ; Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong., Narang P; Harvard John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA., Pan X; Department of Materials Science and Engineering, University of California, Irvine, Irvine, CA 92697, USA.; Irvine Materials Research Institute, University of California, Irvine, Irvine, CA 92697, USA.; Department of Physics and Astronomy, University of California, Irvine, Irvine, CA 92697, USA., Miao J; Department of Physics and Astronomy and California NanoSystems Institute, University of California, Los Angeles, Los Angeles, CA 90095, USA.

Publikováno v: Science advances [Sci Adv] 2021 Sep 17; Vol. 7 (38), pp. eabi6699. Date of Electronic Publication: 2021 Sep 15.

Quantum Information and Algorithms for Correlated Quantum Matter.

Autor: Head-Marsden K; John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States., Flick J; Center for Computational Quantum Physics, Flatiron Institute, New York, New York 10010, United States., Ciccarino CJ; John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States.; Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, United States., Narang P; John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States.

Publikováno v: Chemical reviews [Chem Rev] 2021 Mar 10; Vol. 121 (5), pp. 3061-3120. Date of Electronic Publication: 2020 Dec 16.

Correlating the three-dimensional atomic defects and electronic properties of two-dimensional transition metal dichalcogenides.

Autor: Tian X; Department of Physics & Astronomy and California NanoSystems Institute, University of California, Los Angeles, CA, USA., Kim DS; Department of Physics & Astronomy and California NanoSystems Institute, University of California, Los Angeles, CA, USA., Yang S; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA.; Eyring Materials Center, Arizona State University, Tempe, AZ, USA., Ciccarino CJ; John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA.; Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, USA., Gong Y; Department of Materials Science and NanoEngineering, Rice University, Houston, TX, USA., Yang Y; Department of Physics & Astronomy and California NanoSystems Institute, University of California, Los Angeles, CA, USA.; Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon, Korea., Yang Y; Department of Physics & Astronomy and California NanoSystems Institute, University of California, Los Angeles, CA, USA., Duschatko B; John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA., Yuan Y; Department of Physics & Astronomy and California NanoSystems Institute, University of California, Los Angeles, CA, USA., Ajayan PM; Department of Materials Science and NanoEngineering, Rice University, Houston, TX, USA., Idrobo JC; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA., Narang P; John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA., Miao J; Department of Physics & Astronomy and California NanoSystems Institute, University of California, Los Angeles, CA, USA. miao@physics.ucla.edu.

Publikováno v: Nature materials [Nat Mater] 2020 Aug; Vol. 19 (8), pp. 867-873. Date of Electronic Publication: 2020 Mar 09.