Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Chyiu Hyia Poon"'
Publikováno v:
Journal of Applied Physics; Apr2008, Vol. 103 Issue 8, p084906-6, 6p, 2 Black and White Photographs, 5 Graphs
Autor:
Chyiu Hyia Poon, Alex See
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 24:333-337
Fluorine co-implant has been shown to reduce boron transient enhanced diffusion and deactivation when coupled with conventional spike rapid thermal anneals (RTA). For ultrashallow junction formation beyond the 45 nm technology node, non-melt laser sp
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 23:340-343
Beyond the 45-nm technology node, nonmelt laser thermal annealing (LTA) is a potential candidate to replace the spike rapid thermal annealing (RTA) for the formation of ultrashallow and highly activated source/drain extension junctions. However, one
Publikováno v:
Thin Solid Films. :72-75
Hall measurements performed on laser annealed ultrashallow ion implanted p-type layers on n-type substrates over a wide temperature range showed expected p-type characteristics at low temperature but unexpected n-type behaviour at higher temperature.
Autor:
Lei Liu, Yongfeng Lu, JN Zeng, Chyiu Hyia Poon, Zexiang Shen, Wanxin Sun, Ting Yu, Byung Jin Cho, Yuping Zeng
Publikováno v:
Nanotechnology. 15:658-662
Raman spectroscopy was used to investigate excimer laser annealing and thickness determination of amorphous silicon (a-Si) layers which are less than 20 nm thick. The a-Si layers wer ep roduced on silicon (Si) substrates using Si + ion implantation w
Publikováno v:
Journal of Applied Physics. 103:084906
For preamorphized boron-implanted samples subjected to nonmelt laser spike annealing (LSA), increasing the LSA temperature at temperatures below 1250 °C results in negligible sheet resistance changes due to the formation of inactive boron-interstiti
Publikováno v:
Journal of The Electrochemical Society. 155:H59
In flash lamp annealing, the entire wafer is uniformly preheated to an intermediate temperature before a millisecond duration flash of intense light is applied. This interaction of the preheating condition and final flash energy density on the proper
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. May2010, Vol. 23 Issue 2, p340-343. 4p.
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. Feb2009, Vol. 22 Issue 1, p175-179. 5p. 2 Diagrams, 1 Chart, 2 Graphs.
Publikováno v:
Journal of The Electrochemical Society. 152:G895
The phenomenon of severe dopant loss during rapid thermal annealing of phosphorus-implanted germanium has been investigated. Dopant activation improves for temperatures above 500°C and reaches 100% activation for samples annealed at 600°C. However,