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pro vyhledávání: '"Chyi-Hsiang Chern"'
Autor:
Chyi-Hsiang Chern, Ching-Fa Yeh
Publikováno v:
Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::692ebe62c0d26b77c5a3280c46f2cad6
https://doi.org/10.7567/ssdm.1993.pb-2-6
https://doi.org/10.7567/ssdm.1993.pb-2-6
Autor:
Chyi-Hsiang Chern, Ching-Fa Yeh
Publikováno v:
Japanese Journal of Applied Physics. 33:643
ON/OFF current ratio of poly-Si TFTs has been improved by using a novel structure called the dual-buffer drain (DBD). The new DBD TFT not only reduces the anomalous off-current, but also maintains a high on-current. It mainly combines features of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d57879f873ce4fe002b818227692021
https://doi.org/10.1143/jjap.33.643
https://doi.org/10.1143/jjap.33.643
Publikováno v:
Japanese Journal of Applied Physics; January 1994, Vol. 33 Issue: 1 p643-643, 1p