Zobrazeno 1 - 10
of 58
pro vyhledávání: '"Chwan Ying Lee"'
Publikováno v:
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).
SiC MOSFET is one of the most popular power devices in some high-end applications. Since SiC MOSFET has already penetrated into many applications, the requirement of accurate SPICE models is a significant issue for circuit designers. From previous li
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26f6205bb49a7caa45f0feb68cfd79bd
https://doi.org/10.1109/wipdaasia49671.2020.9360267
https://doi.org/10.1109/wipdaasia49671.2020.9360267
Autor:
Chih-Fang Huang, Chien-Chung Hung, Jheng-Yi Jiang, Chwan-Ying Lee, Lurng-Shehng Lee, Der-Sheng Chao, Fu-Jen Hsu, Wen-Bin Yeh, Kuo-Ting Chu
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Currently, Schottky diode embedded SiC MOSFETs is a popular topic because of its remarkable intrinsic diode behavior and bipolar-degradation-free operation. JMOS is one of them that exhibits much higher chip area efficiency, which means there is neit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f22da6691dda4c8bb790c2c28763629a
https://doi.org/10.1109/ispsd46842.2020.9170058
https://doi.org/10.1109/ispsd46842.2020.9170058
Autor:
Fu-Jen Hsu, Kuo-Ting Chu, Lumg-Shehng Lee, Jheng-Yi Jiang, Chwan-Ying Lee, Chih-Fang Huang, Chien-Chung Hung
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
In order to prevent bipolar degradation and improve the performance of body diode in SiC MOSFET, JBS embedded SiC MOSFET technology is attracting researchers’ attention. In this paper, the discussion focuses on JMOS, where the major feature is reta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eabcdd4b6e42aee0f6d562a097cb3706
https://doi.org/10.1109/ispsd46842.2020.9170045
https://doi.org/10.1109/ispsd46842.2020.9170045
Autor:
Chien-Chung Hung, Yao-Feng Huang, Cheng-Tyng Yen, Fu-Jen Hsu, Hsiang-Ting Hung, Tzong-Liang Chen, Chwan-Ying Lee, Lurng-Shehng Lee
Publikováno v:
Materials Science Forum. 897:533-536
The NBTI characteristics of SiC MOSFET were studied by the subthreshold swing. The subthreshold swing was found to be very sensitive to the starting bias of transfer curve. The increase of subthreshold swing for MOSFET with poor oxide reached 400% wh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3e27bcec5d554605826be314caa2cc1
https://doi.org/10.4028/www.scientific.net/msf.897.533
https://doi.org/10.4028/www.scientific.net/msf.897.533
Publikováno v:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).
An integrated back-to-back SiC Zener diode is proposed and designed as an asymmetric bidirectional voltage clamp between the gate and source to protect the gate oxide of SiC MOSFET from the overvoltage stress. The leakage current of integrated SiC Ze
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b85ee10a7b12e415330600a9f32d385
https://doi.org/10.1109/ispsd.2019.8757583
https://doi.org/10.1109/ispsd.2019.8757583
Publikováno v:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).
To prevent the degradation caused by Bessel plane dislocation and improve the characteristics of body diode in silicon carbide MOSFETs, Schottky barrier diode integrated MOSFET has been developed by many researchers. One of those structures was named
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::358c6c985cf69e3333266e576fbd67b2
https://doi.org/10.1109/ispsd.2019.8757630
https://doi.org/10.1109/ispsd.2019.8757630
Publikováno v:
2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).
The gate oxide of SiC MOSFET has been confirmed to exhibit enough intrinsic lifetime at high temperatures. The real problem of gate oxide in SiC MOSFET is nevertheless the abundant extrinsic defects which may result in early failures and need to be a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::610aed915ee5a49a4d0cef4d9bfb7f0c
https://doi.org/10.1109/wipdaasia.2019.8760324
https://doi.org/10.1109/wipdaasia.2019.8760324
Autor:
Cheng-Tyng Yen, Fu-Jen Hsu, Yao Feng Huang, Lurng Shehng Lee, Chien Chung Hung, Pei Ju Chuang, Heng Yuan Lee, Hsiang Ting Hung, Chwan Ying Lee, Chi-Yin Cheng
Publikováno v:
Materials Science Forum. 858:595-598
MOSFETs and MOS capacitors (MOSCAPs) have been fabricated on Si-face of 4H-SiC to investigate the negative bias temperature instability (NBTI) characteristics of SiC MOSFETs. The shifts of threshold voltage of MOSFETs ranged from -216mV to -1257mV af
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a3c43e8d776e24a27da3a5aa39bd4df
https://doi.org/10.4028/www.scientific.net/msf.858.595
https://doi.org/10.4028/www.scientific.net/msf.858.595
Autor:
Kuo-Ting Chu, Cheng-Tyng Yen, Lurng-Shehng Lee, Fu-Jen Hsu, Chien-Chung Hung, Chwan-Ying Lee, Ya-Fang Li
Publikováno v:
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
This paper provides a method to match characteristics of SiC MOSFET by a simple SPICE model. Besides, this method not only reaches highly approximate results in an accuracy of characteristics compared to commercial SiC SPICE model but also reduces lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05cbdd3b2ce3737b1ad91172d6ec5df6
https://doi.org/10.1109/ispsd.2018.8393688
https://doi.org/10.1109/ispsd.2018.8393688
Autor:
Chien-Chung Hung, Lurng-Shehng Lee, Chwan-Ying Lee, Kuo-Ting Chu, Cheng-Tyng Yen, Ya-Fang Li, Fu-Jen Hsu
Publikováno v:
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
A process and a scalable structure were used to implement the SiC MOSFET with integrated junction barrier controlled Schottky diode (JMOS) without area penalty. The JMOS could provide similar on-resistance and drain-source breakdown voltage with the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c85fc3ae6709db97f29236c62976c39d
https://doi.org/10.1109/ispsd.2018.8393601
https://doi.org/10.1109/ispsd.2018.8393601